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    S11M V3 Search Results

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    FPD6836P70

    Abstract: TL11 TL21 TL22
    Text: FPD6836P70 Datasheet v3.0 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: • • • • • • PACKAGE: 22 dBm Output Power P1dB 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz


    Original     		FPD6836P70 FPD6836P70 2-11GHz) 18GHz) 22A114-B JESD22-A115-A MIL-STD-1686 MILHDBK-263. TL11 TL21 TL22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Noise GaAs MMIC Amplifier, 3.5 - 7.0 GHz Features • • • • • • • MAAM37000-A1 V3 Functional Schematic Low Noise Figure: 2.2 dB Typical High Gain: 17 dB Typical Gain Flatness: +0.5 dB Single Supply: +4 V No External Components Required DC Decoupled RF Input and Output


    Original     		MAAM37000-A1 50-ohm, supp27 PDF

    S11M V3

    Abstract: No abstract text available
    Text: Low Noise GaAs MMIC Amplifier, 3.5 - 7.0 GHz Features • • • • • • • MAAM37000-A1G V3 Functional Schematic Low Noise Figure: 2.2 dB Typical High Gain: 17 dB Typical Gain Flatness: +0.5 dB Single Supply: +4 V No External Components Required DC Decoupled RF Input and Output


    Original     		MAAM37000-A1G 50-ohm, MAAM37000A1G sM37000-A1G S11M V3 PDF

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
    Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant


    Original     		FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD1500SOT89 FPD2250SOT89CE MIL-HDBK-263 filtronic 921 J370 PDF

    TRANSISTOR BC 298

    Abstract: bc 2878 transistor transistor BC 568 FPD3000SOT89 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR
    Text: FPD3000SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant


    Original     		FPD3000SOT89 1850MHZ) FPD3000SOT89E: 2002/95/EC) FPD3000SOT89 FPD3000SOT89E 22-A114. J-STD-020C, TRANSISTOR BC 298 bc 2878 transistor transistor BC 568 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR PDF

    FPD1500DFN

    Abstract: FPD750SOT89 MIL-HDBK-263 EB1500DFN-BA EB1500DFN-BB Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant


    Original     		FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA FPD750SOT89 MIL-HDBK-263 EB1500DFN-BA EB1500DFN-BB Filtronic Compound Semiconductors PDF

    Z5 1512

    Abstract: EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263 575GHz Filtronic Compound Semiconductors
    Text: FPD750DFN Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency


    Original     		FPD750DFN 1850MHZ) FPD750DFN MIL-STD-1686 MIL-HDBK-263. EB750DFN-BB 900MHz EB750DFN-BA 85GHz Z5 1512 EB750DFN-BA EB750DFN-BB FPD750SOT89 MIL-HDBK-263 575GHz Filtronic Compound Semiconductors PDF

    FPD200P70

    Abstract: b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State
    Text: FPD200P70 Data sheet v3.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ J-STD-020C, b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State PDF

    FPD1500SOT89

    Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
    Text: FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, 09DB FPD1500SOT89CE PDF

    Transistor BC 1078

    Abstract: 2S110 FPD750SOT89 FPD750SOT89E transistor bc 647
    Text: FPD750SOT89 Datasheet 3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 Transistor BC 1078 2S110 FPD750SOT89E transistor bc 647 PDF

    PC923 equivalent

    Abstract: ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA
    Text: General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode LED * 1-24 , =— (1 ) Operating principle The infrared L E D utilizes the PN junction of gallium arsenide (G aA s) crystals.


    OCR Scan     		S101D01 S102S01 112S01/S116S01 S10211) PC923 equivalent ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA PDF