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    S12125 Search Results

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    S12125 Price and Stock

    WEE 202S121-25C-0

    HEATSHRINK BOOT SZ21 BLACK
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    DigiKey 202S121-25C-0 Tray 1,173 2
    • 1 -
    • 10 $99.8
    • 100 $67.83
    • 1000 $54.07
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    Essentra Components ASPS-12-125

    BUMPER SQUARE 0.75"L X0.75"W BLK
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    DigiKey ASPS-12-125 Bulk 60 20
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    • 100 $0.0587
    • 1000 $0.04724
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    Mouser Electronics ASPS-12-125 1,080
    • 1 -
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    • 100 $0.058
    • 1000 $0.047
    • 10000 $0.041
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    Newark ASPS-12-125 Pack 1
    • 1 $11.25
    • 10 $9.93
    • 100 $8.3
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    Bisco Industries ASPS-12-125 116
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    DB Roberts ASPS-12-125
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    TE Connectivity 222S121-25C-0

    HEATSHRINK BOOT 90DEG SZ21 BLK
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    DigiKey 222S121-25C-0 Box 20 1
    • 1 $164.36
    • 10 $128.777
    • 100 $110.2778
    • 1000 $110.2778
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    Mouser Electronics 222S121-25C-0 1
    • 1 $141.53
    • 10 $125
    • 100 $110.27
    • 1000 $110.27
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    Newark 222S121-25C-0 Bulk 25
    • 1 -
    • 10 $135.97
    • 100 $135.97
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    Bristol Electronics 222S121-25C-0 17 1
    • 1 $96
    • 10 $88.608
    • 100 $88.608
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    TTI 222S121-25C-0 Each 25
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    • 100 $82.67
    • 1000 $81.02
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    Interstate Connecting Components 222S121-25C-0 1
    • 1 $71.9246
    • 10 $71.9246
    • 100 $71.9246
    • 1000 $71.9246
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    Master Electronics 222S121-25C-0 53
    • 1 $121.87
    • 10 $114.66
    • 100 $76.82
    • 1000 $76.82
    • 10000 $76.82
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    Honeywell Sensing and Control SS-12125

    PRESSURE SENSOR PART
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    DigiKey SS-12125 Bulk 216
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    • 1000 $3.7681
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    Mouser Electronics SS-12125
    • 1 $6.42
    • 10 $4.81
    • 100 $3.93
    • 1000 $3.46
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    Master Electronics SS-12125
    • 1 -
    • 10 $4.08
    • 100 $3.31
    • 1000 $2.9
    • 10000 $2.71
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    TE Connectivity 222S121-25S-0

    HEATSHRINK BOOT 90DEG SZ21 BLK
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    DigiKey 222S121-25S-0 Bulk
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    Newark 222S121-25S-0 Bulk 1
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    Find more S12125 price and stock on Findchips.com

    S12125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		PDF SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiS892ADN

    Abstract: No abstract text available
    Text: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		PDF SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MARKING CODE EA

    Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE EA "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125

    62625

    Abstract: Si4833BDY
    Text: SPICE Device Model Si4833BDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4833BDY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62625

    Untitled

    Abstract: No abstract text available
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		PDF SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		PDF Si1563EDH SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12