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    S12230 Search Results

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    S12230 Price and Stock

    Allegro MicroSystems LLC APS12230LLHALT

    MAGNETIC SWITCH LATCH SOT23W
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    DigiKey APS12230LLHALT Digi-Reel 11,907 1
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    APS12230LLHALT Cut Tape 11,907 1
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    APS12230LLHALT Reel 9,000 3,000
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    Mouser Electronics APS12230LLHALT 17,998
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    Newark APS12230LLHALT Bulk 12,000
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    Allegro MicroSystems LLC APS12230LUAA

    MAGNETIC SWITCH LATCH 3SIP
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    DigiKey APS12230LUAA Reel 8,000
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    Mouser Electronics APS12230LUAA
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    New Advantage Corporation APS12230LUAA 1,000 1
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    Allegro MicroSystems LLC APS12230LLHALX

    MAGNETIC SWITCH LATCH SOT23W
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    DigiKey APS12230LLHALX Reel 30,000
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    Mouser Electronics APS12230LLHALX
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    Hamamatsu Photonics S1223-01

    Photo Diode, 200Pa, 2-Pin Rohs Compliant: Yes |Hamamatsu S1223-01
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    Newark S1223-01 Bulk 30 1
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    Win Source Electronics S1223-01 2,560
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    SPC Multicomp MPF24S1-2230NFS000

    Anti Vandal Sw, Spst-No/Nc, 5A/1A/30V Rohs Compliant: Yes |Multicomp Pro MPF24S1-2230NFS000
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    Newark MPF24S1-2230NFS000 Bulk 1
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    S12230 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1223-01 Hamamatsu For visible IR precision photometry Original PDF
    S1223-01 Hamamatsu Photonics Si PIN photodiode Original PDF
    S1223-01 Unknown The Optical Devices Data Book (Japanese) Scan PDF

    S12230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    s1223 pin photodiode

    Abstract: IR photodiode S1223 S1223-01
    Text: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz


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    PDF S1223 S1223: S1223-01: S1223 S1223-01 s1223 pin photodiode IR photodiode S1223-01

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


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    S1223-01

    Abstract: s1223 pin photodiode uA 741 T KPIN1050E01 S1223 SE-171
    Text: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz


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    PDF S1223 S1223: S1223-01: S1223 S1223-01 SE-171 KPIN1050E01 S1223-01 s1223 pin photodiode uA 741 T KPIN1050E01

    S1223-01

    Abstract: s1223 pin photodiode S1223 KPIN1050J01 LS1223
    Text: PHOTODIODE Si PINフォトダイオード S1223シリーズ 可視~赤外測光用Si PINフォトダイオード 特長 用途 l 高感度 l 高信頼性 l 高速応答 l 光計測機器 l 分析機器など S1223: fc=30 MHz S1223-01: fc=20 MHz l 低容量


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    PDF S1223 S1223: S1223-01: S1223-01 KPINA0073JA S1223-01 s1223 pin photodiode S1223 KPIN1050J01 LS1223

    DF90CF364MTD

    Abstract: LTM10C348 S1223-01 LTM10C348U hamamatsu S1223 liquid (WATER) Level Controller toshiba lvds led s1223 pin photodiode Ultra Violet light lens detector lcd inverter circuit diagram toshiba
    Text: LTM10C348U APPROVAL SIGNATURE SPECIFICATION FOR TOSHIBA TFT-LCD MODULE LTM10C348U SPECIFICATION No. : NL-LTM10C348U-11 DATE OF ISSUE : 2000-07-26 DATE OF EXPIRY : 2003-07-26 T. Nakagawa Senior Manager Liquid Crystal Display Quality Assurance Dept. Liquid Crystal Display Div.


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    PDF LTM10C348U NL-LTM10C348U-11 S1223-01 NL-LTM10C348U-11U DF90CF364MTD LTM10C348 LTM10C348U hamamatsu S1223 liquid (WATER) Level Controller toshiba lvds led s1223 pin photodiode Ultra Violet light lens detector lcd inverter circuit diagram toshiba

    Untitled

    Abstract: No abstract text available
    Text: Si PINフォトダイオード S1223シリーズ 可視~近赤外域測光用Si PINフォトダイオード 特長 用途 可視~近赤外域高感度 光計測機器 高信頼性 分析機器など 高速応答 S1223: fc=30 MHz S1223-01: fc=20 MHz 低容量


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    PDF S1223ã S1223: S1223-01: S1223 S1223-01 KSPDA0196JB KSPDA0193JC

    hamamatsu S1223

    Abstract: S1223
    Text: Si PIN photodiodes S1223 series For visible to near IR, precision photometry Features Applications High sensitivity in visible to near infrared range Optical measurement equipment High reliability Analytical equipment, etc. High-speed response S1223: fc=30 MHz


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    PDF S1223 S1223: S1223-01: S1223 S1223-01 S1223-01 absolu69 KPIN1050E02 hamamatsu S1223

    s1223 pin photodiode

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz


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    PDF S1223 S1223: S1223-01: S1223 S1223-01 SE-171 KPIN1050E01 s1223 pin photodiode

    hamamatsu S1223

    Abstract: s1223 pin photodiode KPIN1050E01 S1223 S1223-01 SE-171
    Text: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz


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    PDF S1223 S1223: S1223-01: S1223 SE-171 KPIN1050E01 hamamatsu S1223 s1223 pin photodiode KPIN1050E01 S1223-01

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 S2506-04 S4707-01 S5077


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    PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


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    PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    S2973-01

    Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
    Text: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active


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    PDF S5821 S5821-01 S5821-02 S5821-03 S5971 S5972 S5973 S5973-01 S5973-02 S5821 S2973-01 S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 3 Type No. Dim ensional Outline ( P .44-46)/ W indow Material Package @ /K TO-5 TO-8 S1223 S1223-01 S3071 /K S3072 @ /K S3883 ® /K S3399 TO-5 ® /K @ W in d o w m aterial, K: borosilicate glass 28 Active Area Effective Size Active Area


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    PDF S3071 S3883 S3072 S1223 S3399 KPINB0071SA

    O30100

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 4 Type No. S1223 Dimensional Effective Active Outline Active (P.46 to 48)/ Package Area Size Area Window Material ‘1 (m m 2) (mm) /K TO-5 S3071 ®/K TO-8 S3072 ®/K S1223-01 S3883 ®/K S3399 ®/K TO-5 *1 : Window material, K: borosilicate glass


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    PDF S1223 S1223-01 S3071 S3072 S3883 S3399 O30100

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


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    PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    S1723-06

    Abstract: S1722-01 S1190-01 PD46 BZZ16 S1223-01 s1188 S1723 S1723-04 S1723-08
    Text: - 260- m & i± 7t % II min \ ßA E mW cm2 IE % • ± ^ Bi -fit 1i Ei Üx5 vK v: ln max inA; Vk !V; iß ft 14 j. ly typ (nmi 'T„ = 25'C) i r „ = 25*C' t, typ i/£S) ft- öi 3% 7 Ra fsj n R,. iß! Vk iV; Cr typ ;pF' VK iV': VK (V) T., ff; i* T O -18


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    PDF S1188 S1188-06 PD-95 S2216-01 bzz16-02 TQ-18 S1190 S1190-01 S1723-06 S1722-01 S1190-01 PD46 BZZ16 S1223-01 S1723 S1723-04 S1723-08

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    PDF S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 4 Type No. Dim ensional Outline (P.47, 48)/ W indow Material ’’ Active Active Package Area Size S1223 (mm) (mm2) 2.4 X 2.8| 6.6 ! TO-8 ¡ Spectral Response Range X Peak Sensitivity Wavelength (nm) (nm) X 3.6 <|>5.0 /K S3883 ® /K


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    PDF S3883 S1223 S3071 ---------S3072 S3399 KPIN8DQ665B KPINB0067EB S3072

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


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    PDF G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01

    S1337-33BR

    Abstract: s4160 S3407 S1227-66BQ S5107 8S02
    Text: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.


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    PDF S1226-18BQ S2386-18L S1190-01 KSPDA0047EA S1190-13 S1226 G1116, G1736 S2386 S1336 S1337-33BR s4160 S3407 S1227-66BQ S5107 8S02