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    S12L Search Results

    S12L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BCR8CS-12LB#B00 Renesas Electronics Corporation 600V - 8A - Triac Medium Power Use, LDPAK(S)-(1), /Tube Visit Renesas Electronics Corporation
    BCR10CS-12LBT1#BH0 Renesas Electronics Corporation 600V-10A-Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR10CS-12LBA1#BH0 Renesas Electronics Corporation 600V-10A-Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8CS-12LB-A1#BH0 Renesas Electronics Corporation 600V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR10CS-12LB#BH0 Renesas Electronics Corporation 600V-10A-Triac Medium Power Use Visit Renesas Electronics Corporation
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    S12L Price and Stock

    Vishay Semiconductors VS-90EPS12L-M3

    DIODE GEN PURP 1.2KV 90A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-90EPS12L-M3 Tube 960 1
    • 1 $5.37
    • 10 $5.37
    • 100 $5.37
    • 1000 $2.5
    • 10000 $2.5
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    Vishay Semiconductors VS-30TPS12L-M3

    SCR 1.2KV 30A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-30TPS12L-M3 Tube 853 1
    • 1 $3.1
    • 10 $3.1
    • 100 $3.1
    • 1000 $1.23
    • 10000 $1.23
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    Vishay Semiconductors VS-40TPS12L-M3

    SCR 1.2KV 55A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-40TPS12L-M3 Tube 846 1
    • 1 $4.21
    • 10 $4.21
    • 100 $4.21
    • 1000 $1.82876
    • 10000 $1.82876
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    NMB Technologies Corporation 02510SS-12L-AA-00

    FAN AXIAL 12VDC WIRE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 02510SS-12L-AA-00 Bulk 703 1
    • 1 $7.24
    • 10 $6.459
    • 100 $7.24
    • 1000 $7.24
    • 10000 $7.24
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    Vishay Semiconductors VS-65EPS12L-M3

    DIODE GEN PURP 1.2KV 65A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-65EPS12L-M3 Tube 578 1
    • 1 $4.1
    • 10 $4.1
    • 100 $4.1
    • 1000 $1.765
    • 10000 $1.765
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    Find more S12L price and stock on Findchips.com

    S12L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S12LCD32F4BV1 Freescale Semiconductor HCS12 32-Frontplane, 4-Backplane Liquid Crystal Display (LCD) Block Guide Original PDF
    S12LN125 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    S12LN125 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    S12L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S12LY9C

    Abstract: Hebei I.T
    Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No. : S12LY9C Features： Highest Flux Yellow High reliability and Very long operating life Low voltage DC operated More Energy Efficient NO UV + Superior ESD protection + + RoHS Compliant - - Typical Applications：


    Original     		PDF S12LY9C 350mA S12LY9C Hebei I.T

    Untitled

    Abstract: No abstract text available
    Text: +HEHL,7 6KDQJKDL &R/WG LED SPECIFICATION Part No. ： S12LY9C-B Features： Highest Flux Yellow + Low voltage DC operated + up to 100K hours + High reliability and Very long operating life - - More Energy Efficient than Incandescent and most Halogen lamps


    Original     		PDF S12LY9C-B 350mA

    Untitled

    Abstract: No abstract text available
    Text: S12LN125 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)125Ï V(RRM)(V) Rep.Pk.Rev. Voltage960 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.3k V(FM) Max.(V) Forward Voltage1.39 @I(FM) (A) (Test Condition)470 @Temp. (øC) (Test Condition)


    Original     		PDF S12LN125 Current150 Voltage960 Current30m

    LCD32F4B

    Abstract: 32-frontplane 4 backplane FP20BP3 FP10BP3 FP18BP1 FP21E
    Text: DOCUMENT NUMBER S12LCD32F4BV1/D LCD32F4B Block User Guide V01.07 Original Release Date: 26-July-2000 Revised: 08-Mar-2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or


    Original     		PDF S12LCD32F4BV1/D LCD32F4B 26-July-2000 08-Mar-2002 LCD32F4B 32-frontplane 4 backplane FP20BP3 FP10BP3 FP18BP1 FP21E

    S12LR2C-B

    Abstract: No abstract text available
    Text: +HEHL,7 6KDQJKDL &R/WG LED SPECIFICATION Part No. ： S12LR2C-B Features： Highest Flux Red + Low voltage DC operated + up to 100K hours + High reliability and Very long operating life - - More Energy Efficient than Incandescent and most Halogen lamps


    Original     		PDF S12LR2C-B 350mA S12LR2C-B

    Untitled

    Abstract: No abstract text available
    Text: STAR Part No. S12LG2C Features Highest Flux Pure Green High reliability and Very long operating life up to 100K hours Low voltage DC operated More Energy Efficient than Incandescent and most Halogen lamps NO UV Superior ESD protection Typical Applications


    Original     		PDF S12LG2C

    LCD32F4B

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DOCUMENT NUMBER S12LCD32F4BV1/D LCD32F4B Block User Guide V01.07 Original Release Date: 26-July-2000 Revised: 08-Mar-2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or


    Original     		PDF S12LCD32F4BV1/D LCD32F4B 26-July-2000 08-Mar-2002 LCD32F4B

    telemetry block diagram

    Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
    Text: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with


    Original     		PDF HFA3600 FN3655 HFA3600 900MHz 900MHz telemetry block diagram HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L

    Untitled

    Abstract: No abstract text available
    Text: DOCUMENT NUMBER 9S12H256BDGV1/D MC9S12H256 Device User Guide V01.16 Original Release Date: 29 SEP 2000 Revised: 05 NOV 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or


    Original     		PDF 9S12H256BDGV1/D MC9S12H256 144-pin MC9S12H256

    generator cr 665 bosch

    Abstract: BOSCH 0 281 002 709 MC9S12ZVM
    Text: MC9S12ZVM-Family Reference Manual HCS12 Microcontrollers Rev. 1.3 20 JAN 2014 MC9S12ZVMRMV1 freescale.com To provide the most up-to-date information, the document revision on the Internet is the most current. A printed copy may be an earlier revision. To verify you have the latest information available, refer to :


    Original     		PDF MC9S12ZVM-Family HCS12 MC9S12ZVMRMV1 S12ZCPU generator cr 665 bosch BOSCH 0 281 002 709 MC9S12ZVM

    5mm piranha led white

    Abstract: Piranha RGB LED 60 SMD 5050 Ultra Bright LEDs LED 3528 RGB
    Text: Catalogue 1 Hebei I.T. Shanghai Co., LTD 1200 Pu dong Ave, Rm.702 200135 Shanghai, China Tel.: +86-21-58526062, 38820027 Fax: +86-21-58523251 Email: [email protected] www.ledz.com Through-hole LED Diodes and Other LED Diodes 5mm InGan (White, Blue Pure Green) LEDs- 1-2


    Original     		PDF 100mA MR16-3 3500K AC/DC12V 200LM MR16-3X1W MR16-3X1W-W6-E27 6000K AC220V 180lm 5mm piranha led white Piranha RGB LED 60 SMD 5050 Ultra Bright LEDs LED 3528 RGB

    SCR TRIGGER PULSE 3 phase

    Abstract: OMC942723170 Hitachi DSA0044
    Text: OMC942723170 H8/300H Series On-Chip Supporting Modules Application Note ADE-502-035 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form,


    Original     		PDF OMC942723170 H8/300H ADE-502-035 SCR TRIGGER PULSE 3 phase OMC942723170 Hitachi DSA0044

    Chips and Technologies F840

    Abstract: b1115 d6160
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF 0103D2 603090C0 H8/300H Chips and Technologies F840 b1115 d6160

    BGA735N16

    Abstract: No abstract text available
    Text: BGA735N16 High Linearity Tri-Band UMTS LNA 2100, 1900/1800/2100, 800/900MHz Data Sheet Revision 3.5, 2009-11-24 Final RF & Protection Devices Edition 2009-11-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF BGA735N16 800/900MHz) BGA735N16 TSNP-16-1

    TGS 880

    Abstract: INFINEON PART MARKING BGA751L7 S12L
    Text: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.


    Original     		PDF BGA751L7 TGS 880 INFINEON PART MARKING S12L

    BGA736

    Abstract: HSDPA BGA736L16 KC639 T1540 T0712
    Text: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA736L16 TSLP-16-1 BGA736L16 TSLP-16-1-PO BGA736 HSDPA KC639 T1540 T0712

    hsdpa

    Abstract: BGA736L16 TGS 800
    Text: D a t a S he et , V 2. 1, J u l y 2 00 8 B G A 7 36 L1 6 Tri-Band HSDPA LNA 2 1 00 , 1 9 0 0/ 2 1 0 0 , 8 0 0 / 9 00 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.


    Original     		PDF TSLP-16-1 BGA736L16 TSLP-16-1-PO hsdpa TGS 800

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA736L16 intellectu-16-1 BGA736L16 TSLP-16-1-PO

    Untitled

    Abstract: No abstract text available
    Text: D a t a S he et , V 3. 0, A ug us t 2 00 8 B G A 7 35 L1 6 H i g h L i n ea r i t y T r i - B an d U M T S L N A 2 1 00 , 1 9 0 0/ 1 8 0 0 /2 1 0 0 , 80 0 / 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-08-26 Published by Infineon Technologies AG


    Original     		PDF TSLP-16-1 BGA735L16 TSLP-16-1-PO

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1314 OT-23 BFR181

    sot marking code ZS

    Abstract: transistor bf 290
    Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration


    OCR Scan     		PDF OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1316 OT-23 BFR183 900MHz

    gbr relais

    Abstract: TRANSISTOR KATALOG VEB M ik ro e le k tro n ik VEB Kombinat Germanium Transistor katalog Schaltkreise ad149 Germanium Transistor Kombinat VEB Gleichrichter
    Text: Stromversorgung M odul 2 0 • G erm anium KOMBINAT VEB ELEKTRO-APPARATE-WERKE BERLIN-TREPTOW STROMVERSORGUNG Modul 20 - Germ anium Ausgabe 1972 I« y ' r . ■•} il- .'ff. Seite 4» 3 Konstruktiver Aufbcau , ■ Elektrische g r a m s t e r 4 Bezeichnung der Bausteine und


    OCR Scan     		PDF 01--B gbr relais TRANSISTOR KATALOG VEB M ik ro e le k tro n ik VEB Kombinat Germanium Transistor katalog Schaltkreise ad149 Germanium Transistor Kombinat VEB Gleichrichter

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


    OCR Scan     		PDF BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc