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    S1B-13-F DIODES Search Results

    S1B-13-F DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    S1B-13-F DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ADG854

    Abstract: ADG854BCPZ-REEL ADG854BCPZ-REEL71 c1316c s1b analog
    Text: 0.5 Ω CMOS, 1.8 V to 5.5 V, Dual SPDT/2:1 Mux, Mini LFCSP ADG854 FEATURES FUNCTIONAL BLOCK DIAGRAM 0.8 Ω typical on resistance Less than 1 Ω maximum on resistance at 85°C 1.8 V to 5.5 V single supply High current carrying capability: 300 mA continuous


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    ADG854 ADG854 CP-10-10) ADG854BCPZ-REEL ADG854BCPZ-REEL71 10-Lead CP-10-10 ADG854BCPZ-REEL71 c1316c s1b analog PDF

    ADG858

    Abstract: ADG858BCPZ-REEL71
    Text: 0.58 Ω CMOS, 1.8 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP ADG858 FEATURES FUNCTIONAL BLOCK DIAGRAM 0.58 Ω typical on resistance 0.82 Ω maximum on resistance at 85°C 1.8 V to 5.5 V single supply High current carrying capability: 250 mA continuous Rail-to-rail switching operation


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    ADG858 CP-16-15) ADG858BCPZ-REEL ADG858BCPZ-REEL71 16-Lead CP-16-15 ADG858 ADG858BCPZ-REEL71 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.58 Ω CMOS, 1.8 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP ADG858 FUNCTIONAL BLOCK DIAGRAM FEATURES 0.58 Ω typical on resistance 0.82 Ω maximum on resistance at 85°C 1.8 V to 5.5 V single supply High current carrying capability: 250 mA continuous


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    ADG858 CP-16-15) ADG858BCPZ-REEL ADG858BCPZ-REEL71 16-Lead CP-16-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES ADG836 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous


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    ADG836 ADG836 RM-10 CP-12-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.85 Ω maximum on resistance at 85°C 1.65 V to 3.6 V operation High current carrying capability: 300 mA continuous Rail-to-rail switching operation Fast switching times: <20 ns Typical power consumption: <0.1 µW


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    ADG824 10-Lead CP-10-10) ADG824BCPZ-REEL7 EVAL-ADG824EBZ CP-10-10 PDF

    ADG858

    Abstract: ADG858BCPZ-REEL71
    Text: 0.58 Ω CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP ADG858 FEATURES FUNCTIONAL BLOCK DIAGRAM 0.58 Ω typical on resistance 0.82 Ω maximum on resistance at 85°C 2.3 V to 5.5 V single supply High current carrying capability: 250 mA continuous Rail-to-rail switching operation


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    ADG858 CP-16-15) ADG858BCPZ-REEL ADG858BCPZ-REEL71 16-Lead CP-16-15 ADG858 ADG858BCPZ-REEL71 PDF

    ADG824BCPZ-REEL

    Abstract: EVAL-ADG824EBZ1 ADG824 max 083
    Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 Mux in Mini LFCSP Package ADG824 FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.7 Ω maximum on resistance at 85°C 1.65 V to 3.6 V operation High current carrying capability: 300 mA continuous Rail-to-rail switching operation


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    ADG824 ADG824 CP-10-10) ADG824BCPZ-REEL ADG824BCPZ-REEL71 EVAL-ADG824EBZ1 10-Lead CP-10-10 EVAL-ADG824EBZ1 max 083 PDF

    S1A 57

    Abstract: No abstract text available
    Text: Preliminary Technical Data FEATURES +1.8 V to +5.5 V operation Ultra-Low On resistance: 0.5 Ω typical 0.8 Ω max at 5V supply Excellent audio performance, ultralow Distortion: 0.01 Ω typical 0.2 Ω max Ron flatness High current carrying capability: 400 mA continuous


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    ADG888 CP-16) ADG888YRU ADG888YCP ADG888YCB RU-16 CP-16 CB-16 S1A 57 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.4 Ω CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP Packages ADG888 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V operation Ultralow on resistance 0.4 Ω typical 0.6 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.07 Ω typical


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    ADG888 16-Lead 16-Ball RU-16 CP-16-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.5 Ω CMOS, 1.8 V to 5.5 V, Dual SPDT/2:1 Mux, Mini LFCSP ADG854 FEATURES FUNCTIONAL BLOCK DIAGRAM 0.8 Ω typical on resistance Less than 1 Ω maximum on resistance at 85°C 1.8 V to 5.5 V single supply High current carrying capability: 300 mA continuous


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    ADG854 ADG854 CP-10-10) ADG854BCPZ-REEL ADG854BCPZ-REEL71 10-Lead CP-10-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C


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    ADG836L RM-10) ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 RM-10 PDF

    BU15-7521ROBL

    Abstract: AN3311-2 diode s1b SI3401 AN331 PDS5100 Si3400 VSTIM
    Text: AN331 COMPENSATING THE FEEDBACK LOOP Si3400 A N D Si 3 4 0 1 FOR THE 1. Introduction The Si3400 and Si3401 reference designs are available for many output voltages e.g., 3.3, 5, 9, 12 V and output capacitor types. In general, Silicon Laboratories strongly recommends using these standard designs to minimize


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    AN331 Si3400 Si3401 Si3400/01 Si3400-EVB Si3401-EVB Si3400ISO-EVB Si3401ISO-EVB BU15-7521ROBL AN3311-2 diode s1b AN331 PDS5100 VSTIM PDF

    ADG836

    Abstract: ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 MO-187-BA RM-10 ADG836YRMZ
    Text: 0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES ADG836 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous


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    ADG836 ADG836 RM-10 CP-12-1 ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 MO-187-BA RM-10 ADG836YRMZ PDF

    ADG824

    Abstract: ADG824BCPZ-REEL EVAL-ADG824EBZ1
    Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 Mux in Mini LFCSP Package ADG824 FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.7 Ω maximum on resistance at 85°C 1.65 V to 3.6 V operation High current carrying capability: 300 mA continuous Rail-to-rail switching operation


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    ADG824 ADG824 CP-10-10) ADG824BCPZ-REEL ADG824BCPZ-REEL71 EVAL-ADG824EBZ1 10-Lead CP-10-10 EVAL-ADG824EBZ1 PDF

    EVAL-ADG888EB

    Abstract: ADG888 ADG888YRUZ MO-220-VGGC ADG888BCBZ
    Text: 0.4 Ω CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP Packages ADG888 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V operation Ultralow on resistance 0.4 Ω typical 0.6 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.07 Ω typical


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    ADG888 16-Lead 16-Ball RU-16 CP-16-4 EVAL-ADG888EB ADG888 ADG888YRUZ MO-220-VGGC ADG888BCBZ PDF

    ADG888

    Abstract: ADG888YRUZ MO-220-VGGC ADG888YCBZ-REEL7
    Text: 0.4 Ω CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP Packages ADG888 FEATURES 1.8 V to 5.5 V operation Ultralow on resistance 0.4 Ω typical 0.6 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.07 Ω typical 0.14 Ω maximum RON flatness


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    ADG888 16-Lead 16-Ball RU-16 CP-16-4 ADG888 ADG888YRUZ MO-220-VGGC ADG888YCBZ-REEL7 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.85 Ω maximum on resistance at 85°C 1.65 V to 3.6 V operation High current carrying capability: 300 mA continuous Rail-to-rail switching operation Fast switching times: <20 ns Typical power consumption: <0.1 µW


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    ADG824 ADG824 33007-A 10-Lead CP-10-10) ADG824BCPZ-REEL7 EVAL-ADG824EBZ CP-10-10 PDF

    ADG836L

    Abstract: ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 MO-187BA RM-10
    Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C


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    ADG836L RM-10) ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 RM-10 ADG836L ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 MO-187BA RM-10 PDF

    branding s9c

    Abstract: ADG884 MSOP ADG884 CP109 ADG884BRMZ MO-187-BA RM-10 ADG884BCPZ-REEL
    Text: 0.5 Ω CMOS, Dual 2:1 MUX/SPDT Audio Switch ADG884 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V operation Ultralow on resistance 0.28 Ω typical 0.41 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.1 Ω typical 0.15 Ω maximum RON flatness


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    ADG884 PRODU85 CP-10-9 ADG884BCBZ-500RL72 10-Lead 10-Ball CB-10 ADG884BCBZ-REEL2 ADG884BCBZ-REEL72 branding s9c ADG884 MSOP ADG884 CP109 ADG884BRMZ MO-187-BA RM-10 ADG884BCPZ-REEL PDF

    ADG772BCPZ-1REEL

    Abstract: ADG772BCPZ-REEL
    Text: CMOS Low Power Dual 2:1 Mux/Demux USB 2.0 480 Mbps /USB 1.1 (12 Mbps) ADG772 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM USB 2.0 (480 Mbps) and USB 1.1 (12 Mbps) signal switching compliant Tiny 10-lead 1.6 mm x 1.3 mm mini LFCSP package and 12-lead 3 mm × 3 mm LFCSP package


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    10-lead 12-lead ADG772 ADG772 CP-12-1) ADG772BCPZ-1REEL ADG772BCPZ-REEL7 EVAL-ADG772EBZ ADG772BCPZ-REEL PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5 Ω CMOS Low Power Dual 2:1 Mux/Demux USB 1.1 Switch ADG787 FEATURES FUNCTIONAL BLOCK DIAGRAM USB 1.1 signal switching compliant −3 dB bandwidth, 150 MHz Tiny 10-lead LFCSP and MSOP packages, 10-ball WLCSP package Single-supply 1.8 V to 5.5 V operation


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    ADG787 10-lead 10-ball ADG787 PDF

    adg884

    Abstract: ADG884BRMZ
    Text: 0.5 Ω CMOS, Dual 2:1 MUX/SPDT Audio Switch ADG884 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V operation Ultralow on resistance 0.28 Ω typical at 5 V supply 0.41 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.1 Ω typical


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    ADG884 10-Lead 10-Ball RM-10 adg884 ADG884BRMZ PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.5 Ω CMOS, Dual 2:1 MUX/SPDT Audio Switch ADG884 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES 1.8 V to 5.5 V operation Ultralow on resistance 0.28 Ω typical at 5 V supply 0.41 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion


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    ADG884 10-Lead 10-Ball RM-10 PDF

    ADG787

    Abstract: ADG787BRMZ MO-187-BA RM-10 ADG787BCPZ 25GS
    Text: 2.5 Ω CMOS Low Power Dual 2:1 Mux/Demux USB 1.1 Switch ADG787 FEATURES FUNCTIONAL BLOCK DIAGRAM USB 1.1 signal switching compliant −3 dB bandwidth, 150 MHz Tiny 10-lead LFCSP and MSOP packages, 10-ball WLCSP package Single-supply 1.8 V to 5.5 V operation


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    ADG787 10-lead 10-ball ADG787 ADG787BRMZ MO-187-BA RM-10 ADG787BCPZ 25GS PDF