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    S1D DIODES Search Results

    S1D DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    S1D DIODES Price and Stock

    Taiwan Semiconductor S1D

    Diode Switching 200V 1A Automotive 2-Pin SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com S1D 2,640
    • 1 $0.578
    • 10 $0.578
    • 100 $0.368
    • 1000 $0.1372
    • 10000 $0.0337
    		Buy Now

    Diotec Semiconductor AG S1D

    Diode - SMA - 200V - 1A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com S1D
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0155
    		Buy Now

    S1D DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: S1D-Q … S1M-Q S1D-Q … S1M-Q Surface Mount Silicon Rectifier Diodes AEC-Q101 Silizium-Gleichrichterdioden für die Oberflächenmontage (AEC-Q101) Version 2013-10-21 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5 1.5 ±0.1


    Original     		PDF AEC-Q101) DO-214AC UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: S1D Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)75 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’


    Original     		PDF Voltage200 Current10u Current50 StyleDO-214AC

    S1m diode

    Abstract: DO-214AC diode marking SD S1J-004HE3/5AT
    Text: S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current


    Original     		PDF J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 S1m diode DO-214AC diode marking SD S1J-004HE3/5AT

    sma diode marking sm vishay

    Abstract: No abstract text available
    Text: S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop


    Original     		PDF DO-214AC J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sma diode marking sm vishay

    diode S1G

    Abstract: No abstract text available
    Text: S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current


    Original     		PDF J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 diode S1G

    SMA MARKING S1G

    Abstract: SMA MARKING S1d SMA MARKING S1M SMA MARKING S1J s1m marking code JB marking transistor MARKING CODE S1M SMA s1m sma s1a sma diode SMA marking AB
    Text: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF DS16003 SMA MARKING S1G SMA MARKING S1d SMA MARKING S1M SMA MARKING S1J s1m marking code JB marking transistor MARKING CODE S1M SMA s1m sma s1a sma diode SMA marking AB

    SMA MARKING S1d

    Abstract: No abstract text available
    Text: S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S1A S1B S1D S1G S1J S1K S1M Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly


    Original     		PDF J-STD-020A DS16003 SMA MARKING S1d

    s1m marking code

    Abstract: SMA MARKING S1J S1A-13-F jb marking code JB marking transistor S1 marking S1A-13 s1a marking code marking code 63, sma package S1BB
    Text: S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF J-STD-020A MIL-STD-202, DS16003 s1m marking code SMA MARKING S1J S1A-13-F jb marking code JB marking transistor S1 marking S1A-13 s1a marking code marking code 63, sma package S1BB

    s1m marking code

    Abstract: S1A-13-F S1AB-13-F SMA MARKING 14 35
    Text: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF DS16003 s1m marking code S1A-13-F S1AB-13-F SMA MARKING 14 35

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF J-STD-020Cs DS16003

    SMA MARKING S1d

    Abstract: s1m marking code
    Text: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF DS16003 SMA MARKING S1d s1m marking code

    s1m marking code

    Abstract: to-236 marking code S1A
    Text: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • • • • • Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF DS16003 s1m marking code to-236 marking code S1A

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak


    Original     		PDF DS16003

    Untitled

    Abstract: No abstract text available
    Text: Standard Recovery Power Diodes S1 Series Features: • • • • • • For surface mounted application Glass passivated junction chip Low forward voltage drop Easy pick and place High surge current capability High temperature soldering : 250°C / 10 seconds at terminals


    Original     		PDF SMA/DO-214AC element14

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: SMA MARKING S1G S1G HE3 marking SM DO-214AC MARKING CODE TL DO-214AC VISHAY MARKING SJ SMA s1m marking code MARKING CODE S1M SMA SMA MARKING S1J S1M HE3
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •


    Original     		PDF DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 06-Sep-05 GENERAL SEMICONDUCTOR MARKING SJ SMA SMA MARKING S1G S1G HE3 marking SM DO-214AC MARKING CODE TL DO-214AC VISHAY MARKING SJ SMA s1m marking code MARKING CODE S1M SMA SMA MARKING S1J S1M HE3

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SG SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA s1m marking code S1J HE3 vishay sj 96 SMA MARKING S1G S1J SMA RECTIFIER S1J-E3
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability


    Original     		PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 08-Apr-05 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SG SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA s1m marking code S1J HE3 vishay sj 96 SMA MARKING S1G S1J SMA RECTIFIER S1J-E3

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: s1jhe3 VISHAY MARKING SG SMA SURFACE MOUNT DIODES MIL GRADE SMA MARKING SJ JESD22-B102 J-STD-002 s1j 96 HIGH VOLTAGE DIODES SURFACE MOUNTED MIL GRADE VISHAY MARKING SJ SMA
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC GENERAL SEMICONDUCTOR MARKING SJ SMA s1jhe3 VISHAY MARKING SG SMA SURFACE MOUNT DIODES MIL GRADE SMA MARKING SJ JESD22-B102 J-STD-002 s1j 96 HIGH VOLTAGE DIODES SURFACE MOUNTED MIL GRADE VISHAY MARKING SJ SMA

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type 1.0A Surface Mount Glass Passivated Rectifier S1A-S1M Features Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly Maximum Ratings and Electrical Characteristics @ Ta = 25


    Original     		PDF

    VISHAY MARKING SG SMA

    Abstract: GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D J-STD-002B SG 27 surge current
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •


    Original     		PDF DO-214AC UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 VISHAY MARKING SG SMA GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D SG 27 surge current

    VISHAY MARKING SG SMA

    Abstract: VISHAY S1M GENERAL SEMICONDUCTOR MARKING SJ SMA S1G Vishay S1M e3 S1G HE3 S1M DO-214AC VISHAY MARKING SG VISHAY SMA SJ S1JHE3
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 18-Jul-08 VISHAY MARKING SG SMA VISHAY S1M GENERAL SEMICONDUCTOR MARKING SJ SMA S1G Vishay S1M e3 S1G HE3 S1M DO-214AC VISHAY MARKING SG VISHAY SMA SJ S1JHE3

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD L8312 Preliminary LINEAR INTEGRATED CIRCUIT DU AL POLARI Z AT I ON AN D T ON E SWI T CH CON T ROLLER  DESCRI PT I ON The UTC L8312 is specially designed integrated circuit for control satellite receiver front-end block switch and provides


    Original     		PDF L8312 L8312 QW-R123-016

    1N4001 SMB

    Abstract: 1N4007 SMB 1N4000 1n4004 1n4002 RS3B/BB US13
    Text: BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series 1N4000 1N5391 1N5400 S1 S2 S3 PX6A h AV H •[. 1.5 1 1.5 S ’■\ 50 1N4001 1N5391 1N5400 S1A S2A S3A PX6A01 100 1N4002 1N5392 1N5401 S1B S2B S3S PX6A02 :i.i 200 1N4003 1N5393 1N5402 S1D S2D S3D PX6A03


    OCR Scan     		PDF 1N4000 1N5391 1N5400 1N4001 PX6A01 1N4002 1N5392 1N5401 1N4001 SMB 1N4007 SMB 1N4000 1n4004 1n4002 RS3B/BB US13

    BSD215

    Abstract: bsd214 BSD212 BSD213 transistor BD 341
    Text: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high


    OCR Scan     		PDF BSD212 BSD215 BSD213 BSD215 BSD214 DDb7717 B5D212 transistor BD 341

    1N4007 sma

    Abstract: 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB
    Text: § BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series Voltage l(AV 50 200 100 300 400 500 600 1N4004 800 Outline 1000 1N4000 1 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007 DO-41 1N5391 1.5 1N5391 1N5392 1N5393 1M5394 1N5395 1N5396 1N5397 1N5398 1N5399


    OCR Scan     		PDF 1N4000 1N5391 1N5400 1N4001 PX6A01 1N4002 1N5392 1N5401 1N4007 sma 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB