56-PIN
Abstract: LH28F320S3H-L LH28F320S3-L S3HL
Text: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14
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LH28F320S3-L/S3H-L
LH28F320S3-L11/S3H-L11
LH28F320S3-L14/S3H-L14
56-PIN
LH28F320S3H-L
LH28F320S3-L
S3HL
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56-PIN
Abstract: LH28F320S3H-L LH28F320S3-L
Text: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14
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LH28F320S3-L/S3H-L
LH28F320S3-L11/S3H-L11
LH28F320S3-L14/S3H-L14
SSOP056-P-0600)
85MAX.
FBGA080/064-P-0818)
56-PIN
LH28F320S3H-L
LH28F320S3-L
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gsm internet modem circuit
Abstract: S3H-L TSOP056-P-1420
Text: LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide
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LH28F160S3-L/S3H-L
LH28F16S3-L/S3H-L
FBGA064-P-0811)
SDIP064-P-0750)
gsm internet modem circuit
S3H-L
TSOP056-P-1420
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4 pole circuit breaker ABB
Abstract: S3H-02
Text: Isomax Molded case circuit breakers S3 – S8 15 Is M oma CC x Bs S4 N 250 B W - 2 xxx Accessories added in alpha-numeric order 1 A = BA = BA3 = S_ = U_ = Auxiliary Switch Bell Alarm Bell Alarm (S6/S7 only) Shunt trip with voltage code Undervoltage release with voltage code
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14AWG
250kcmil
K4ET-250
480VAC
C0201
4 pole circuit breaker ABB
S3H-02
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tpc8118
Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ
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TPCM8001-H
TPCM8003-H
TPCM8002-H
2Q/2007
TPCM8102
1Q/2007
tpc8118
SVI 2004 A
toshiba f5d
tpc8026
tpc8109
oks2c
toshiba f5b
TPC8028
MARKING TPC8107 SOP8
MOSFET MARKING STP
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A17E
Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L
Text: SHARP LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 3-L/S3H -L flash m em ories with Sm art 3 technology are high-density, low-cost,
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LH28F320S3-L/S3H-L
LH28F320S3-L/S3H-L
56-pin
P056-ff'
80-ball
LH28F320S3XX-L11
LH28F320S3XX-L14
SSOP056-P-0600)
FBGA080/064-P-0818)
A17E
LH28F320S3H-L
LH28F320S3-L
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A18E
Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Text: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide
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F320S3-
LH28F320S3-L/S3H-L
LH28F320S3-L/S3H-L
H28F320S3XX-L11
LH28F320S3XX-L14
SSOP056-P-0600)
FBGA080/064-P-0818)
A18E
56-PIN
LH28F320S3H-L
LH28F320S3-L
A17OI
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A18E
Abstract: gsm internet modem circuit TSOP056-P-1420
Text: SHARP LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH 28F16S3-L/S3H -L flash • High performance read access time m em ories with Sm art 3 technology are high-density, low-cost,
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LH28F160S3-L/S3H-L
LH28F16S3-L/S3H-L
thS3XX-L13
SSOP056-P-0600)
FBGA064-P-0811)
04TYP.
SDIP064-P-0750)
IL0-46
A18E
gsm internet modem circuit
TSOP056-P-1420
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S3H-02
Abstract: S19C s3vc0 S2LA20 s3h 02 S1K20H S1K40 S6K20 S2K20H S2K40
Text: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S19J S19L S20C S20D S20E S20G S20J S20L S20L60 S30L40 S3QL60 S51A
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S1K20H
100ns
S1K40
300ns
S2K20
S2K20H
S2K40
S3H-02
S19C
s3vc0
S2LA20
s3h 02
S1K40
S6K20
S2K20H
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Untitled
Abstract: No abstract text available
Text: 64 SurfaceMountLC Filters These space saving low and high pass filters are pre-tuned, tight tolerance modules which serve a wide variety of filtering requirements. They feature 3rd order Butterworth alignment, less than 0.3 dB insertion loss, and a compact, 1812size construction ideally suited for auto insertion
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1812size
S3LP-606
HP8753D
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Untitled
Abstract: No abstract text available
Text: 2 . Sch em atic: Max 1. M echanical D im ensions: < o m o t / <F 015 6 O —S3H V X YYWW o 1 00 m CO •sl- J Ò X o TRANSFORMER O in fa . CM o 3. E lectrical S p ecification s: 25°C PARALLEL SERIES OCL NO DC : 14.70uH±20% 58.81 uH±20% Isat: 3.46Adc
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XF0156
46Adc
500Vrms
73Adc
MIL-STD-202,
UL94V-0
E151556
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Untitled
Abstract: No abstract text available
Text: 66 SurfaceMountLC Filters These space saving low and high pass filters are pre-tuned, tight tolerance modules which serve a wide variety of filtering requirements. They feature 3rd order Butterworth alignment, less than 0.3 dB insertion loss, and a compact, 1812size construction ideally suited for auto insertion
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1812size
HP8753D
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kam relay
Abstract: No abstract text available
Text: V iS D I N C . . E N G IN E E R IN G D A T A S H E E sT i , « ' ' / *' TEST PROCEDURE RELAY T Y PE :FC B '205-020fcM COMPXJTER'TART » > ¿ * 9 3 4 7 3 7 1 .M ^ b P r T S O CUSTOMER/SPECIFICATION: M & 2 > 5 3 & f2 - 0 0 6 REV NJ /A ~ TEST REQUIREMENTS COIL R E S.; 2 0 O H M S
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205-020fcM
1463M
kam relay
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HD-20
Abstract: No abstract text available
Text: o A 3d l 30 1 133HS 31V0S 6¿¿00 01 a310ldlS3U on ONiMvya 3000 33V0 LV 3NiMVdo d^noisno 1H0I3M OLOOt-tLL 3ZIS 331 IdOHS _LNIdd_L003 065' 02-aH 3_LI1AId~l1AIV ‘SISOd Via 9Z0' ‘113HS HVJJ3kM INOdj/M ‘ONViy ‘NSOd SZ '£ 3ZIS ‘ASSV IdOd3 s o n xu jo e g
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HD-20
31MAR2000
HD-20
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1R90
Abstract: TMBYV10-20 melf footprint byv10-40 byv 65
Text: SGS-THOMSON * 7# . T M B Y V 1 0 -2 0 - » 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featur ing very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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300jiS
71B7E37
1R90
TMBYV10-20
melf footprint
byv10-40
byv 65
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152bh
Abstract: 8C125 fzlt
Text: TO SH IB A TLCS-870/X CMOS 8 t í y h T -f O P =1 > t° il - $ TLCS-870/X V V - X TLC S-870/X v V - X i ä , üftg, m y hv > 7 °^ >f ï n a y tf o. - 9 f t 0 M + 7° U V 7 A io X Xß r ♦ - 9 ^ u : IMS* 4 h :1 8 1 8 4 2 ^ • mWM 8 bit X 8 b i t , 16 bit X 8 b i t , 16 bit -h 8 bit
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TLCS-870/X
TLCS-870/X
TLCS-870/Xv
0043FH
0043FH
0013B
0013C
0013D
0013E
152bh
8C125
fzlt
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP561G TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP561G TRIAC DRIVER Unit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E The TOSHIBA TLP561G consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting
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TLP561G
TLP561G
100mA
2500Vrms
E67349
2500Vac
11-7A9
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8010J
Abstract: 8010P
Text: holt; HI-8010 Series INTEGRATED CIRCUITS CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION The HI-8010 high voltage display driver is con structed of MOS P Channel and N Channel enhancement mode devices in a single monolithic structure. It is designed to drive high voltage liquid
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HI-8010
40-PIN
48-PIN
52-PIN
52PQS
8010J
8010P
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Untitled
Abstract: No abstract text available
Text: 3ü GEC P L E S S E Y j a n u a r y i 996 SEM ICO ND UCTO RS DS4278-2.1 TF913.C FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 2000V 1300A ^T RMS 17000A ^TSM 300V/|_ls dV/dt 500A/(is dl/dt 50jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS.
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DS4278-2
TF913.
7000A
50jis
TF913
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 534256A SEMICONDUCTOR S e rie s 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynam ic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide w ide operating
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34256A
256KX
HY534256A
HV534256A
300mil
100BSC
300BSC
4b750Ã
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
D0Qb212
GMM7321000AN
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
GMM7321000AN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH4M32BJ-6,-7/ MH4M32 NBJ-6, -7/ MH4M32SBJ-6,-7 FAST PAGE MODE 134217728-BIT (41943Û4-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32BJ/NBJ/SBJ is 4194304-word by 32-bit PIN CONFIGURATION (TOP VIEW) [Both side] dynamic RAM module. That module consists of thirty-two
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MH4M32BJ-6
MH4M32
MH4M32SBJ-6
134217728-BIT
32-BIT)
MH4M32BJ/NBJ/SBJ
4194304-word
32-bit
MH4M32BJ-6
MH4M32NBJ-6
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Untitled
Abstract: No abstract text available
Text: AMENDMENT a Am29240 EH, Am29245 "EH, and Am29243™EH Advanced Micro Devices Enhanced High-Performance RISC Microcontrollers_ This document amends the Am29240 ™, Am29245 ™, andAm29243 ™ High-Performance RISC Microcontroller Data
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Am29240
Am29245
Am29243
andAm29243
17787C)
Am29240EH
Am29245EH
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