Q62705-K5003
Abstract: "Angle Sensor"
Text: Giant Magneto Resistive Position Sensor S6 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features Typical Applications 2.9 ±0.1
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"Angle Sensor"
Abstract: MARKING S6 angle position sensors SMD MARKING s6 Q62705-K5003 GMR sensor
Text: Giant Magneto Resistive Position Sensor S6 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features 2.9 ±0.1 2˚ . 30˚ 1.9
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MARKING S6
Abstract: Q62705-K5003 s6 03 smd S6 MARKING smd diode S6 GMR sensor marking code s6
Text: Giant Magneto Resistive Position Sensor GMR S6 Version 1.0 Data Sheet This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features 2.9 ±0.1 2˚ . 30˚
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33206
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33206 ACCEPTS THESE DEVICES SOT-26, SOT-457 SC-59-6, SC-74-R TSOT-23-6, TSOP-6 B ANALOG RJ-6, UJ-6 FAIRCHILD SuperSot-6 I.R. Micro-6 * LINEAR S6 PKG.
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OT-26,
OT-457
SC-59-6,
SC-74-R
TSOT-23-6,
33206
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S4 42 DIODE
Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
ID110
IF110
100-0085X1
100-0085X1-SMD
100-0085X1
S4 42 DIODE
smd diode S6
smd diode code g3
DIODE marking S6 77
smd diode g6 DIODE S4 39 smd diode
smd diode code g4
smd diode code g2
SMD SL
DIODE S4 37
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Untitled
Abstract: No abstract text available
Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications
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180-004X2
ID110
IF110
20110307c
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smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
smd diode g6
marking G3
IF110
GMM3x60-015X1
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MTI150W40GC
Abstract: smd diode g6 S4 44 DIODE SMD
Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications
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180-004X2
ID110
IF110
20110307c
MTI150W40GC
smd diode g6
S4 44 DIODE SMD
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Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
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75W100GA
Abstract: 75W100GC DIODE S4 37
Text: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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100-01X1
160-0055X1
20110505f
75W100GA
75W100GC
DIODE S4 37
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120W55GA
Abstract: 120W55GC smd diode code g6 9
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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160-0055X1
20110307i
120W55GA
120W55GC
smd diode code g6 9
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S4 42 DIODE
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Text: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
IF110
ID110
100-0085X1-SMD
100-0085X1
100-0085X1
S4 42 DIODE
smd diode g6 DIODE S4 39 smd diode
smd diode S4 28
DIODE S4 37
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smd diode code g3
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode g5 smd diode g6 SMD MARKING CODE s4 starter/generator IF110 DIODE marking S4 06 SMD mosfet MARKING code TC
Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications
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180-004X2
ID110
IF110
20100917b
smd diode code g3
smd diode g6 DIODE S4 39 smd diode
smd diode code g4
smd diode g5
smd diode g6
SMD MARKING CODE s4
starter/generator
IF110
DIODE marking S4 06
SMD mosfet MARKING code TC
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85W100GC
Abstract: No abstract text available
Text: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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100-01X1
160-0055X1
20110505f
85W100GC
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smd diode marking code L2
Abstract: marking G5 MOSFET smd part marking
Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications
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180-004X2
ID110
IF110
20110307c
smd diode marking code L2
marking G5 MOSFET
smd part marking
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Untitled
Abstract: No abstract text available
Text: MTI 200WX75GD Three phase full Bridge VDSS = 75 V = 255 A ID25 RDSon typ. = 1.1 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S2 S4 S6 L1- L2- L3- iv Applications MOSFETs Symbol Conditions Maximum Ratings
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200WX75GD
MTI200WX75GD-SMD
MTI200WX75GD
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SMD mosfet MARKING code TC
Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
SMD mosfet MARKING code TC
smd diode g6
SMD MARKING CODE s4
IF110
diode L2 smd
smd diode code g3
smd diode code g6
smd diode marking code L2
Control of Starter-generator
DIODE marking S6 57
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
Symbol1000
20110307i
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Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions
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GMM3x60-015X2
ID110
IF110
20120618a
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smd diode g6
Abstract: 3x120-0075X2 marking G3
Text: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x120-0075X2
3x120-0075X2
smd diode g6
marking G3
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diode marking L3
Abstract: marking L2 diode smd diode S6 DIODE S4 53 marking G5 MOSFET SMD mosfet MARKING code TC smd diode g6 smd diode mj 19 S3 marking DIODE IF110
Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x180-004X2
IF110
ID110
3x180-004X2
diode marking L3
marking L2 diode
smd diode S6
DIODE S4 53
marking G5 MOSFET
SMD mosfet MARKING code TC
smd diode g6
smd diode mj 19
S3 marking DIODE
IF110
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Q62705K5003
Abstract: siemens gmr Q62705-K5003
Text: SIEMENS Giant Magneto Resistive Position Sensor S6 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor in SMD package
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: SIEMENS Giant Magneto Resistive Position Sensor S6 Preliminary Data Version 1.0 This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor in SMD package
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OCR Scan
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C30T02QL
Abstract: C30T02QL-11A
Text: SCHOTTKY BARRIER DIODE FEATURES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C30T02QL o Tabless TO-220: C30T02QL-11A -\ 1 4 (.0 S6 ) 1.2 (.047 | _j • 1.4C.065) T 10.6^ 417 ) 1~m m "53Ö35SI 1 0 1 (3 9 8 1 1 0 — 0.3 (. 012 ) 4 .01.157 )
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3A/20V
C30T02QL
C30T02QL-11A
O-263AB
24nun
C30T02QL
O-220:
C30T02QL-11A
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