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    S8410 Search Results

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    S8410 Price and Stock

    NXP Semiconductors MC33FS8410G3ES

    SYSTEM BASIS CHIP FS8410
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    DigiKey MC33FS8410G3ES Tray 260 1
    • 1 $6.25
    • 10 $4.864
    • 100 $4.864
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    Avnet Americas MC33FS8410G3ES Tray 16 Weeks 780
    • 1 -
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    • 1000 $5.17503
    • 10000 $4.70811
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    Mouser Electronics MC33FS8410G3ES 1,257
    • 1 $6.25
    • 10 $4.87
    • 100 $4.87
    • 1000 $4.86
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    Newark MC33FS8410G3ES Bulk 70 1
    • 1 $7.45
    • 10 $6.82
    • 100 $6.04
    • 1000 $5.77
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    Rochester Electronics MC33FS8410G3ES 700 1
    • 1 $5.4
    • 10 $5.4
    • 100 $5.08
    • 1000 $4.59
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    Avnet Silica MC33FS8410G3ES 18 Weeks 260
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    EBV Elektronik MC33FS8410G3ES 18 Weeks 260
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    Flip Electronics MC33FS8410G3ES 18,460
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    onsemi NDS8410

    MOSFET N-CH 30V 10A 8SOIC
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    DigiKey NDS8410 Reel 2,500
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    • 10000 $0.5625
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    NDS8410 Digi-Reel 1
    • 1 $1.7
    • 10 $1.7
    • 100 $1.7
    • 1000 $1.7
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    NDS8410 Cut Tape 1
    • 1 $1.7
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    Texas Instruments ADS8410-13REF

    ADS8410-13REF
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    DigiKey ADS8410-13REF Box 1
    • 1 $319.22
    • 10 $319.22
    • 100 $319.22
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    Texas Instruments ADS8410IBRGZR

    IC ADC 16BIT SAR 48VQFN
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    DigiKey ADS8410IBRGZR Reel 2,500
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    Rochester Electronics ADS8410IBRGZR 5,696 1
    • 1 $21.84
    • 10 $21.84
    • 100 $20.53
    • 1000 $18.56
    • 10000 $18.56
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    Rochester Electronics LLC ADS8410IBRGZR

    IC ADC 16BIT SAR 48VQFN
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    DigiKey ADS8410IBRGZR Bulk 14
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    • 100 $22.71
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    S8410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S8410MG

    Abstract: No abstract text available
    Text: S8410MG TECHNICAL DATA Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 840 nm Optical Ouput Power: 10 mW Package: 5.6 mm Electrical Connection Pin Configuration PIN 1 2 3 Bottom View Function LD Cathode


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    PDF S8410MG S8410MG

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


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    PDF 9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI

    NDS8410S

    Abstract: No abstract text available
    Text: February 1997 National Semiconductor N D S8410S Single N-Channel Enhancement M ode Field Effect Transistor General Description Features SO-8 N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF NDS8410S NDS841 0D33347 NDS8410S

    J31C

    Abstract: NDS8410
    Text: February 1 9 9 6 N N D S8410 Single N-Channel Enhancement M ode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s T hese N -C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


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    PDF NDS8410 NDS8410 0D33347 J31C

    MAX1652EEE

    Abstract: MAX1655 siliconix FET AUDIO AMPLIFIER s8410
    Text: y k iy jx iv k i H i g h - E f f i c i e n c y , PWM, S t e p - D o w n DC-DC C o n t r o l l e r s in 16-Pin QSOP _ F e a t u r e s The M A X 1 6 5 2 -M A X 1 655 are h ig h -e ffic ie n c y , pulsewidth-m odulated PWM , step-down DC-DC controllers


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    PDF 16-Pin MAX1653/MAX1655 MAX797. MAX1655) AX1652-M AX1655 ModeTM97 102mm S012-XX MAX1652EEE MAX1655 siliconix FET AUDIO AMPLIFIER s8410

    MAX1652EEE

    Abstract: MAX1655 controller LTA 702 N siliconix FET AUDIO AMPLIFIER CoilCraft 104
    Text: y k iy jx iv k i H i g h - E f f i c i e n c y , PWM, S t e p - D o w n DC-DC C o n t r o l l e r s in 16-Pin QSOP _ F e a t u r e s The M A X 1 6 5 2 -M A X 1 655 are h ig h -e ffic ie n c y , pulsewidth-m odulated PWM , step-down DC-DC controllers


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    PDF 16-Pin MAX1653/MAX1655 MAX797. MAX1655) AX1652-M AX1655 MAX1652EEE MAX1655 controller LTA 702 N siliconix FET AUDIO AMPLIFIER CoilCraft 104

    IN400S

    Abstract: No abstract text available
    Text: Semiconductor LM2640 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM 2640 is a dual step-dow n pow er supply controller in­ tended fo r application in notebook personal com puters and other battery-pow ered equipm ent.


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    PDF LM2640 re-9959 IN400S

    LM2641

    Abstract: LM2641MTC-ADJ NDS8410
    Text: A ugust 1998 LM2641 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM2641 is a dual step-dow n pow er supply controller in­ tended fo r application in notebook personal com puters and other battery-pow ered equipm ent.


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    PDF LM2641 LM2641 LM2641MTC-ADJ NDS8410

    IN400S

    Abstract: 2641M s8410
    Text: A ugust 1998 LM2641 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM2641 is a dual step-dow n pow er supply controller in­ tended fo r application in notebook personal com puters and other battery-pow ered equipm ent.


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    PDF LM2641 regulation-9959 IN400S 2641M s8410

    s8410

    Abstract: No abstract text available
    Text: March 1997 FAIRCHILD M l G C IN D U O T O R S8410A Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


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    PDF NDS8410A S8410A s8410