S9G66A Search Results

S9G66A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S9G66A		Toshiba	FET, Microwave Power GaAs FET Transistor, ID 1.4 A		Scan	PDF
S9G66A		Toshiba	MICROWAVE POWER GaAs FET		Scan	PDF

S9G66A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TO SH IBA M I C R O WA V E P O W E R GaAs FET MICROW A VE SEMICONDUCTOR S9G66A T E C H N IC A L D A T A FEATURES •HIGH ■NON-MATCHED POWER P1dB=30.5dBm ■ HIGH at 2. 7GHz ■HERMETICALLY GAIN G1dB=12dB T YPE at SEALED PACKAGE 2 . 7 GHz RF PERFORMANCE SPECIFICATIONS	OCR Scan	PDF	S9G66A
S9G66A Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB	OCR Scan	PDF	S9G66A S9G66A

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TO SH IBA M I C R O WA V E P O W E R GaAs FET MICROW A VE SEMICONDUCTOR S9G66A T E C H N IC A L D A T A FEATURES •HIGH ■NON-MATCHED POWER P1dB=30.5dBm ■ HIGH at 2. 7GHz ■HERMETICALLY GAIN G1dB=12dB T YPE at SEALED PACKAGE 2 . 7 GHz RF PERFORMANCE SPECIFICATIONS

OCR Scan

PDF

S9G66A

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB