SA133 Search Results

SA133 Result Highlights (5)

Part	Manufacturer	Description
71V3556SA133BG	Renesas Electronics Corporation	3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O
71V3556SA133BQG	Renesas Electronics Corporation	3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O
71V2548SA133BG	Renesas Electronics Corporation	4 MEG ZBT W/SLOW TC
71V2578SA133BQGI8	Renesas Electronics Corporation	256K X 18
71V3556SA133BGI8	Renesas Electronics Corporation	3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O

SA133 Price and Stock

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STMicroelectronics STEVAL-ISA133V1 EVAL BOARD FOR ALTAIR04900
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STEVAL-ISA133V1	Bulk	1		1	1 $50.03 10 $50.03 100 $50.03 1000 $50.03 10000 $50.03	Buy Now
Avnet Americas	STEVAL-ISA133V1	Box		53 Weeks, 1 Days	13	1 - 10 - 100 $47.27273 1000 $46.42857 10000 $46.42857	Buy Now
Mouser Electronics	STEVAL-ISA133V1		3			1 $49.92 10 $49.92 100 $49.92 1000 $49.92 10000 $49.92	Buy Now
STMicroelectronics	STEVAL-ISA133V1		3		1	1 $48.92 10 $48.92 100 $48.92 1000 $48.92 10000 $48.92	Buy Now
Rochester Electronics LLC 2SA1338-6-TB-E 0.5A, 50V, PNP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1338-6-TB-E	Bulk			1,268	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
Rochester Electronics LLC 71V3556SA133BG IC SRAM 4.5MBIT PARALLEL 119PBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	71V3556SA133BG	Bulk			35	1 - 10 - 100 $8.62 1000 $8.62 10000 $8.62	Buy Now
Renesas Electronics Corporation 71V3556SA133BG IC SRAM 4.5MBIT PAR 119PBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	71V3556SA133BG	Tray			168	1 - 10 - 100 - 1000 $9.13577 10000 $9.13577	Buy Now
Renesas Electronics Corporation 71V3556SA133BQG IC SRAM 4.5MBIT PAR 165CABGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	71V3556SA133BQG	Tray			136	1 - 10 - 100 - 1000 $9.34412 10000 $9.34412	Buy Now
Avnet Americas	71V3556SA133BQG	Tray		18 Weeks	136	1 $7.79 10 $7.79 100 $7.79 1000 $7.79 10000 $7.79	Buy Now
Mouser Electronics	71V3556SA133BQG					1 - 10 - 100 - 1000 $8.51 10000 $8.51	Get Quote
Avnet Silica	71V3556SA133BQG			19 Weeks	136	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SA133 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
48C20 Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout	Original	PDF	3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
CompactCellTM Static RAM Abstract: No abstract text available Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS	Original	PDF	Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM
GL032A Abstract: S71GL032A S71GL032 Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this	Original	PDF	S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032
M15451E Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can	Original	PDF	PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	PDF	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00
740-0007 Abstract: EN29GL064 6A000 Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and	Original	PDF	EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000
SA-275 Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document	Original	PDF	Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G
M420000000 Abstract: FSB073 3FE00 Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector	Original	PDF	Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00
71WS256NC0BAIAU Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002 Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics	Original	PDF	S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
MBM29BS64LF Abstract: MBM29BS64LF-18 MBM29BT64LF-18 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed	Original	PDF	DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18
BGA-101P-M01 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM	Original	PDF	DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01
MX29LV640D Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales	Original	PDF	MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
MX29LV640ebt Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable	Original	PDF	MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
FTA073 Abstract: No abstract text available Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am50DL128BH FTA073--73-Ball FTA073

A039h Abstract: 3A400 Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	PDF	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400
4kw marking Abstract: No abstract text available Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,	Original	PDF	F0307 4kw marking
Untitled Abstract: No abstract text available Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.	Original	PDF	Am29DL640D 16-Bit) 256od)
AT49BV6416 Abstract: AT49BV6416C AT49BV6416CT Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	PDF	64-megabit AT49BV6416 AT49BV6416C AT49BV6416CT
PL129N Abstract: 29f400 pl127 S29PL-N S71PL512ND0 sample code write buffer spansion Text: S71PL512ND0 MirrorBit Flash Family Two S29PL256N Devices 32 M x 16-Bit CMOS 3.0-Volt only Simultaneous Read/Write, Page-Mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical specifications regarding the Spansion product(s) described herein. The	Original	PDF	S71PL512ND0 S29PL256N 16-Bit) PL129N 29f400 pl127 S29PL-N sample code write buffer spansion
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	PDF	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
S29WS256N Abstract: S71WS512NE0BFWZZ Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip	Original	PDF	S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N
Untitled Abstract: No abstract text available Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M32V-XBX 8Mx32 120ns 13x22mm
TSOP-20 FOOTPRINT Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL
S29JL064H Abstract: S29PL064J 29F400 flash Text: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical	Original	PDF	Am29DL640H S29JL064H S29PL064J AM29DL320H S29JL064H S29PL064J 29F400 flash

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SA133 Search Results

SA133 Result Highlights (5)

SA133 Price and Stock

STMicroelectronics STEVAL-ISA133V1

Rochester Electronics LLC 2SA1338-6-TB-E

Rochester Electronics LLC 71V3556SA133BG

Renesas Electronics Corporation 71V3556SA133BG

Renesas Electronics Corporation 71V3556SA133BQG

SA133 Datasheets Context Search

48C20

CompactCellTM Static RAM

GL032A

M15451E

SA6954

740-0007

SA-275

M420000000

71WS256NC0BAIAU

MBM29BS64LF

BGA-101P-M01

MX29LV640D

MX29LV640ebt

FTA073

A039h

4kw marking

Untitled

AT49BV6416

PL129N

SA452

S29WS256N

Untitled

TSOP-20 FOOTPRINT

S29JL064H