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    SAMSUNG "NOR FLASH" 512MB Search Results

    SAMSUNG "NOR FLASH" 512MB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54F02/BCA Rochester Electronics LLC NOR GATE; QUAD 2-INPUT Visit Rochester Electronics LLC Buy
    911HM Rochester Electronics LLC OR/NOR Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, CDIP32, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy

    SAMSUNG "NOR FLASH" 512MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung 8Gb nand flash

    Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
    Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash


    Original     		PDF 108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr

    BA512

    Abstract: BA389 PIN Diode BA333 ba508 BA379 BA306 BA507 BA341 BA459 BA343
    Text: K8C10 11 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification K8C10(11)INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C10 512Mb fah-007FFFFh 0060000h-006FFFFh 0050000h-005FFFFh 0040000h-004FFFFh 0030000h-003FFFFh 0020000h-002FFFFh 0010000h-001FFFFh BA512 BA389 PIN Diode BA333 ba508 BA379 BA306 BA507 BA341 BA459 BA343

    BA339

    Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
    Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb couldresul0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh BA339 AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64

    BA505

    Abstract: BA389 PIN Diode BA339 ba308 BA379 BA343 ba473 BA512 ba508 BA306
    Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb 0030000h-003FFFFh 0020000h-002FFFFh 0010000h-001FFFFh 000C000h-000FFFFh 0008000h-000BFFFh 0004000h-0007FFFh 0000000h-0003FFFh 00000h BA505 BA389 PIN Diode BA339 ba308 BA379 BA343 ba473 BA512 ba508 BA306

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    BA339

    Abstract: BA407 BA404 BA420
    Text: Advance Information FLASH MEMORY K8F12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8F12 512Mb 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh 0060000h-006FFFFh BA339 BA407 BA404 BA420

    BA471

    Abstract: K8F12 BA459 BA313 BA318 BA343 BA379 BA402 BA514 BA280
    Text: Advanced Information K8F12 13 15ET(B)M Flash Memory 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8F12 512Mb 00000h 0000000h-00001FFh 64-Ball 08MAX BA471 BA459 BA313 BA318 BA343 BA379 BA402 BA514 BA280

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    BA339

    Abstract: ba379 BA489
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 ba379 BA489

    BA306

    Abstract: BA339
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA306 BA339

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA339

    Abstract: ba406 K8F1315ETM
    Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb inh-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh BA339 ba406 K8F1315ETM

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258

    OneNAND

    Abstract: oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash
    Text: SEC-ONENAND-AN-001 Samsung OneNAND System Requirement Samsung Electronics Copyright ⓒ 2004 Samsung Electronics Co.,LTD. Revision History Version 0.1 Date NOV-25-2004 Comment Initial version Author Seungeun Lee Approval Document Overview - Status: - Num of Pages:


    Original     		PDF SEC-ONENAND-AN-001 NOV-25-2004 OneNAND oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash

    movinand

    Abstract: samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash
    Text: Samsung Fusion Semiconductors Samsung Fusion Memory Software Flash DRAM The Next-Generation Technology for High-Performance Mobile Applications SRAM Logic What is Fusion Memory? As consumers continue their insatiable demand for higher-performance, ever-smaller


    Original     		PDF BR-07-MEM-001 movinand samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash

    usb flash drive circuit diagram sandisk

    Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH
    Text: SmartMedia White Paper Technology and Market Forecast January, 2000 For more information Young Ju KANG Email : [email protected] SmartMedia™ White Paper 2000 (c) Samsung Electronics Co.Ltd. I.


    Original     		PDF 15-micron 256Mb 512Mb usb flash drive circuit diagram sandisk research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH

    samsung eMMC 4.5

    Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
    Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile


    Original     		PDF BRO-09-DRAM-001 samsung eMMC 4.5 eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2

    RCD 1230 SAMSUNG

    Abstract: ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37
    Text: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~ 2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB KFH1G16Q2M-DEB KFH1G16D2M-DEB KFH1G16U2M-DIB 63FBGA RCD 1230 SAMSUNG ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


    Original     		PDF AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D

    tsop sensor

    Abstract: K4S560432 TSOP sensor datasheet ISSD128M4STB TOSHIBA part numbering
    Text: Data Sheet Part No. ISSD128M4STB Irvine Sensors Corporation Microelectronics Products Division 512Mbit 128M x 4 Synchronous DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISSD128M4STB 512Mbit tsop sensor K4S560432 TSOP sensor datasheet ISSD128M4STB TOSHIBA part numbering

    Samsung k9f1208uom

    Abstract: K9F1208UOM k9f1208uo tsop sensor 512MB NOR FLASH samsung FLASH BGA 512MB SRAM "NOR Flash" 512MB samsung NAND Flash DIE NAND FLASH BGA
    Text: Data Sheet Part No. ISNF128M16LTC Irvine Sensors Corporation Microelectronics Products Division 2 Gigabit 128M x 16 FLASH Memory Stack Features: q q Low Profile, Same PCB area as a single


    Original     		PDF ISNF128M16LTC 512Mbit 512MB Samsung k9f1208uom K9F1208UOM k9f1208uo tsop sensor 512MB NOR FLASH samsung FLASH BGA 512MB SRAM "NOR Flash" 512MB samsung NAND Flash DIE NAND FLASH BGA

    K4H560438

    Abstract: nand flash DQS
    Text: Data Sheet Part No. ISDD64M8STB Irvine Sensors Corporation Microelectronics Products Division 512Mbit 64M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD64M8STB 512Mbit 256Mbit K4H560438 nand flash DQS

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand