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    SAMSUNG ELECTRONICS LOGO Search Results

    SAMSUNG ELECTRONICS LOGO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG ELECTRONICS LOGO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi hdd schematic board

    Abstract: samsung dvd Schematic circuit diagram samsung lcd monitor circuit diagram china lcd tv schematic diagram samsung lcd tv circuits diagrams Repair screen 46" LCD Samsung TV repair lcd monitor samsung schematic diagram led tv samsung tv pcb board repair schematic diagram samsung led
    Text: discrepancies between any succeeding product and this manual. Copyright c 2003 SAMSUNG Electronics Co.,Ltd. All rights reserved. Under the copyright laws, this manual cannot be reproduced in any form without the prior written permission of SAMSUNG Electronics Co.,Ltd. No


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    02333A

    Abstract: BA46-02330A BA4602 samsung BA41 01326A SAMSUNG ELECTRONICS BA44 Hitachi hdd schematic board BA46-02317A nvidia geforce4 BA41-00328A schematic diagram cga to vga converter
    Text: discrepancies between any succeeding product and this manual. Copyright c 2003 SAMSUNG Electronics Co.,Ltd. All rights reserved. Under the copyright laws, this manual cannot be reproduced in any form without the prior written permission of SAMSUNG Electronics Co.,Ltd. No


    Original     		PDF

    KLM8G2FE3B

    Abstract: klm8g samsung eMMC 4.5 TLC nand samsung tlc nand flash KLM4G 153 ball eMMC memory SAMSUNG emmc klm8g2 Samsung KLMBG4GE2A
    Text: Samsung eMMC Managed NAND Flash memory solution supports mobile applications FBGA QDP Package BROCHURE Efficiency, reduced costs and quicker time to market Expand device development with capable memory solutions Simplify mass storage designs Conventional NAND Flash memory can be challenging to


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    S5L8424

    Abstract: 45c2C S5L8424X s5l8 samsung Pop TYPE TO 092 Package pic MAC-24 samsung st 56ac
    Text: SWL Release Note: CalmSHINE16 V1.62b Media Release History RN_SWL_AIT_CalmSHINE16_Release_History Title Keywords Abstract Release Note: CalmSHINE16 V1.62b Media CalmSHINE16, V1.62b, Media This document is the release note of CalmSHINE16 V1.62b Media System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16c S5L8424 45c2C S5L8424X s5l8 samsung Pop TYPE TO 092 Package pic MAC-24 samsung st 56ac

    HEX386

    Abstract: s3cc S3CC9 S3FC9 HEX-386 HEX-86
    Text: SWL Release Note: CalmSHINE16 V1.62 Media Release History RN_SWL_AIT_CalmSHINE16_Release_History Title Keywords Abstract Release Note: CalmSHINE16 V1.62 Media CalmSHINE16, V1.62, Media This document is the release note of CalmSHINE16 V1.62 Media System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16c HEX386 s3cc S3CC9 S3FC9 HEX-386 HEX-86

    s5l7821

    Abstract: 62C200 V162A 45c2C 41dc CalmSHINE16
    Text: SWL Release Note: CalmSHINE16 V1.62c Media Release History RN_SWL_AIT_CalmSHINE16_Release_History Title Keywords Abstract Release Note: CalmSHINE16 V1.62c Media CalmSHINE16, V1.62c, Media This document is the release note of CalmSHINE16 V1.62c Media System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16c s5l7821 62C200 V162A 45c2C 41dc

    S3CC9

    Abstract: S3CC9TC s3cc9gc C3200 55bS s3cc Samsung ETA
    Text: SWL Release Note: CalmSHINE16 V1.56e Release History RN_SWL_AIT_CalmSHINE16_Release_History_070413 Title Keywords Abstract Release Note: CalmSHINE16 V1.56e CalmSHINE16, V1.56e This document is the release note of CalmSHINE16 V1.56e System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16 S3CC9 S3CC9TC s3cc9gc C3200 55bS s3cc Samsung ETA

    S3CC9

    Abstract: s3cc9gc S3FC9 S3CC9nc 0x811 OPENice-C3200 s3cc9tc S3CC9EB Calm16 s3cc
    Text: SWL Release Note: CalmSHINE16 V1.56f Release History RN_SWL_AIT_CalmSHINE16_Release_History_080529 Title Keywords Abstract Release Note: CalmSHINE16 V1.56f CalmSHINE16, V1.56f This document is the release note of CalmSHINE16 V1.56f System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16 S3CC9 s3cc9gc S3FC9 S3CC9nc 0x811 OPENice-C3200 s3cc9tc S3CC9EB Calm16 s3cc

    CALMSHINE16_RELEASE_HISTORY_060626

    Abstract: S3CC9 S3CC9TC S3FC9 s3cc9nw c9dc C3200 s3cc9gc S3FC9DC S3CC9E8
    Text: SWL Release Note: CalmSHINE16 V1.56d Release History RN_SWL_AIT_CalmSHINE16_Release_History_060626 Title Keywords Abstract Release Note: CalmSHINE16 V1.56d CalmSHINE16, V1.56d This document is the release note of CalmSHINE16 V1.56d System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16 CALMSHINE16_RELEASE_HISTORY_060626 S3CC9 S3CC9TC S3FC9 s3cc9nw c9dc C3200 s3cc9gc S3FC9DC S3CC9E8

    S3CC9TC

    Abstract: S3CC9 S3FC9 s3cc9gc OPENice-C3200 transistor c3200 CalmSHINE16 calm16 c3200 abstract of project
    Text: SWL Release Note: CalmSHINE16 V1.56h Release History RN_SWL_AIT_CalmSHINE16_Release_History_081222 Title Keywords Abstract Release Note: CalmSHINE16 V1.56h CalmSHINE16, V1.56h This document is the release note of CalmSHINE16 V1.56h System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, witlib16 S3CC9TC S3CC9 S3FC9 s3cc9gc OPENice-C3200 transistor c3200 calm16 c3200 abstract of project

    S3FC9AC

    Abstract: S3CC9 samsung S3FC9AC S3FC9 s3cc9gc c3200 samsung electronics logo transistor c3200 A102 S3CC9EF
    Text: SWL Release Note: CalmSHINE16 V1.56i Release History RN_SWL_AIT_CalmSHINE16_Release_History_090703 Title Keywords Abstract Release Note: CalmSHINE16 V1.56i CalmSHINE16, V1.56i This document is the release note of CalmSHINE16 V1.56i System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, witlib16 S3FC9AC S3CC9 samsung S3FC9AC S3FC9 s3cc9gc c3200 samsung electronics logo transistor c3200 A102 S3CC9EF

    Untitled

    Abstract: No abstract text available
    Text: D ata Sheet Part Number : SACHSW654XXN0NNAAA Bin : W2 , (R0, S0), (D0, E0, F0, G0) CUSTOMER CHECKED CHECKED APPROVED SACHSW654XXN0NNAAA Introduction Part Number : SACHSW654XXN0NNAAA Automotive Headlamp Lighting Source Features Package : Silicone covered ceramic on Cu_metal PCB


    Original     		PDF SACHSW654XXN0NNAAA 700lm 2012/08/13/Rev 20F/SOHO

    samsung serdes

    Abstract: samsung edram samsung ARM11 ARM1176JZ ARM1136J-S ibm edram ARM1176JZ-S K4H560838E-TLB0 sublvds SAMSUNG SRAM
    Text: Samsung Semiconductor Foundry Design Expertise, Leading-Edge Processes, Comprehensive Service and Capacity Assurance to Enable Rapid Production of Advanced Logic ICs The Best of Both Worlds: IDM and Pure-Play Foundry For fabless semiconductor companies staking their


    Original     		PDF BRO-07-SLSI-001 samsung serdes samsung edram samsung ARM11 ARM1176JZ ARM1136J-S ibm edram ARM1176JZ-S K4H560838E-TLB0 sublvds SAMSUNG SRAM

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    samsung external dvd writer

    Abstract: sh-b123 samsung electronics logo blu ray blu-ray SAMSUNG LAPTOP optical drive samsung optical se-s084d samsung board design guide
    Text: Slim ODD Solutions for Today’s Thin Computing Portable Storage, Gaming and Entertainment all in an External Optical Drive 2010 External ODD Forecast External ODD Market will robustly grow in 2010 - Market Size : ’09 5M 28% → ’10 7M (40%) Æ New demand from Net book(4.3M) & Ultra thin PC(1.9M) + Existing demand(0.8M)


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    TC58NVG3D4CTG10

    Abstract: TC58NVG3D4CTG tc58nvg3d4 tc58nvg3 tc58nvg3d4ct samsung MLC nand flashes toshiba MLC nand flash Datasheet toshiba NAND Flash MLC toshiba NAND Flash MLC ADSP-BF53x
    Text: Engineer-to-Engineer Note a EE-302 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail [email protected] or [email protected] for technical support.


    Original     		PDF EE-302 ADSP-BF53x TC58NVG3D4CTG ADSP-BF533 ADSP-2126x EE-279) EE-302) TC58NVG3D4CTG10 tc58nvg3d4 tc58nvg3 tc58nvg3d4ct samsung MLC nand flashes toshiba MLC nand flash Datasheet toshiba NAND Flash MLC toshiba NAND Flash MLC

    GE 6066

    Abstract: medtronic trw 8550
    Text: Focus on Markets and Applications DO NOT PRINT - TRIM AREA DO NOT PRINT - TRIM AREA DO NOT PRINT - TRIM AREA DO NOT PRINT - TRIM AREA Market Applications Sample Customers AUTOMOTIVE • Fuel Economy & Emission Reduction • Active Safety • Body Electronics & Lighting


    Original     		PDF BRD8060-9 BRD8060/D GE 6066 medtronic trw 8550

    DRAM material declaration

    Abstract: No abstract text available
    Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004


    Original     		PDF MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb DRAM material declaration

    samsung accelerometer

    Abstract: KIT3109MMA7260Q MC68HC908KX8 MMA7260Q RD3112MMA7260Q ZBA301 freescale tire pressure sensor
    Text: For Release 11 May 2005, 6 a.m. CDT Freescale targets consumer applications with three-axis sensor Industry-first g-selectable accelerometer measures in three dimensions, boasts quick power-up and cost-saving component count NUREMBERG, Germany – SENSOR+TEST 2005 – May 11, 2005 –


    Original     		PDF MMA7260Q samsung accelerometer KIT3109MMA7260Q MC68HC908KX8 RD3112MMA7260Q ZBA301 freescale tire pressure sensor

    TRAY 15X15

    Abstract: bga Shipping Trays tray jedec BGA ad456 176TQFP Package tray 15X15 MPSU 140 tray bga 23 AD4567 BGA-1515
    Text: I AMSUN ELECTRONICS KS8664B_ CDMA/AMPS Dual Mode Modem Processor DATA SHEET Ordering July, Information Dev ice Package KS8664B 196PBGA KS8664BQ 176TQFP 1999 CDMA Team System LSI/Semiconductor SAMSUNG Electronics Co., LTD. [\D r\D ^ Uí KÍ I— o


    OCR Scan     		PDF KS8664B_ KS8664B KS8664BQ 196PBGA 176TQFP SCom3200 15X15 15X15 BGA--1515 AD4567 TRAY 15X15 bga Shipping Trays tray jedec BGA ad456 176TQFP Package tray 15X15 MPSU 140 tray bga 23 AD4567 BGA-1515

    samsung electronics logo

    Abstract: DDR3 i7 nehalem
    Text: Gdy nasza pamiçc DDR3 zwiçksza mozliwosci, ozywa wyobraznia Satysfakcja z dobrego wyboru Samsung Semiconductor Europe, 2008 Pamiçc DDR3 firmy Samsung jest zoptymalizowana pod kqtem zarówno wydajnosci, jak i oszczçdnosci energii. Bez wzgiçdu na to, czy instaluje siç


    OCR Scan     		PDF 1GB240pinDDR3DIMM 128-bitowy 25GBnasekundà D-65760 samsung electronics logo DDR3 i7 nehalem

    i7 nehalem

    Abstract: servidores mas potentes samsung ddr3
    Text: Cuando nuestra memoria DDR3 te permite hacer más con menos, se revive la imaginación El placer de elegir bien Samsung Semiconductor Europe, 2008 La memoria DDR3 de Samsung está optimizada tanto para ofrecer un mejor rendimiento como para ahorrar energía. Ya esté instalada en


    OCR Scan     		PDF D-65760 i7 nehalem servidores mas potentes samsung ddr3

    samsung DDR3 SDRAM 2GB

    Abstract: i7 nehalem DDR3 DIMM Samsung ddr3 1600 SDRAM
    Text: Memoria DDR3: da oggi potrai Fare più cose con meno energia. Samsung Semiconductor Europe, 2008 e l'Immaginazione spicca 11volo © Samsung Semiconductor Europe 2008 Memoria avanzata DDR3 Samsung per PC Il nuovo standard prestazionale nel campo delle memorie


    OCR Scan     		PDF 240pin 25GB/secondo. D-65760 samsung DDR3 SDRAM 2GB i7 nehalem DDR3 DIMM Samsung ddr3 1600 SDRAM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMM Module with 128Mb RDRAMs 4 6 8 1 2 16d RIMM™ Module with 144Mb RDRAMs Overview Key Timing Parameters/Part Numbers The Rambus RIMM™ module is a general purpose highperformance memory module suitable for use in a broad


    OCR Scan     		PDF KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 128Mb/144Mb