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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM584000B KMM584000B KM41C4000BJ 20-pin 30-pin 22/iF KMM584000B-6 110ns M584000B-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM581000B 581000B KMM581 KM41C1OOOBJ 20-pln 30-pin 581000B- 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM591000BN KMM591000BN KM44C1000BJ 20-pin KM41C1000CJ 30-pin 110ns KMM591000BN-7

    Untitled

    Abstract: No abstract text available
    Text: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs


    OCR Scan     		PDF 00104SG KMM591000N KMM591000N KM44C1000J-1M 20-pin KM41C1000AJ-1M 20-pln 30-pin 150ns

    KM41C1000CLP

    Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
    Text: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 200fiA cycle/64ms 256Kx4 KM41C1000CLP KM41C1000CLJ DRAM 18DIP Scans-001144 samsung hv capacitor

    KM41C4000A

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • 7 ^ 4 1 4 2 00144^4 031 « S A C K KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM584000A KMM584000A KM41C4000AJ 20-pin 30-pin KMM584000A- 130ns 150ns KM41C4000A

    KM41C4000A

    Abstract: No abstract text available
    Text: KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584020A consist o f eight KM41C4000ALJ DRAMs


    OCR Scan     		PDF KMM584020A KMM584020A KM41C4000ALJ 20-pin 30-pin 22/xF M584020A-7 KM41C4000A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM591020AN KMM591020AN KM44C1020ALJ 20-pin KM41C1000BLJ 30-pin 130ns 150ns

    KMM5916000

    Abstract: No abstract text available
    Text: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs


    OCR Scan     		PDF KMM5916000/T KMM5916000-6 KMM5916000-7 KMM5916000-8 110ns 130ns 150ns KMM5916000/T KM41C16000rr KMM5916000

    DG113

    Abstract: Samsung Capacitor sse samsung pram
    Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7


    OCR Scan     		PDF KM41V4000LL KM41V4000LL 130ns 150ns 180ns 304x1 KM41V4000/L DG113 Samsung Capacitor sse samsung pram

    dram simm memory module samsung 30-pin 16M

    Abstract: 16M 30-pin SIMM
    Text: KMM5816100/T DRAM MODULES 1 6 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816100/T is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816100/T consist of eight KM41C16000J/T DRAMs


    OCR Scan     		PDF KMM5816100/T KMM5816100-6 KMM5816100-7 KMM5816100-8 110ns 130ns 150ns KMM5816100/T KM41C16000J/T dram simm memory module samsung 30-pin 16M 16M 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 7Tb4142 0015445 33T • SNGK b7E D CMOS DRAM KM41C1002C 1,048,576x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002C is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF 7Tb4142 KM41C1002C KM41C1002C KM41C1002C-6 110ns KM41C1002C-7 130ns KM41C1002C-8 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7 RbM lM2 0 0 1 S 224 KMM5816100/T 343 I SM6 K DRAM MODULES 16 M x8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5816100/T is a 16M bitx8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5816100/T KMM5816100/T KM41C16000/T 24-pin 30-pin KMM5816100-6 110ns KMM5816100-7 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E D • KMM581000C 001 S 02 M Tfll S N G IC DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module The Samsung


    OCR Scan     		PDF KMM581000C KMM581000C KM41C1000C 20-pin 30-pin 110ns KMM581000C-7 130ns KMM581000C-8

    KM41C1000CJ-6

    Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
    Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF b4142 KM41C1000C KM41C1000C-6 110ns KM41C1000C-7 130ns KM41C1000C-8 150ns 256Kx4 KM41C1000CJ-6 KM41C1000cJ-7 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF QG15431 KM41C1001C KM41C1001C 576x1 KM41C1001C-6 110ns KM41C1001C-7 130ns KM41C1001C-8 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM416C1OOOL/LL • 7Tb4].4S GDlb3b5 134 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000L/LL is a CMOS high speed 1,048,576 b itx 16 Dynamic Random Access Memory.


    OCR Scan     		PDF KM416C1OOOL/LL KM416C1000L/LL 130ns KM416C10OOLVLL-8 150ns KM416C1OOOL/LL-10 100ns 180ns KM416C1000L/LL-7 KM416C1

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C4001B KM41C4001B 304x1 110ns KM41C4001B-7 130ns KM41C4001B-8 KM41C4001B-6 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb*4142 001003b S Ë3SÎ1GK KM41C1000BL CMOS DRAM 1MX1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000BL is a C M O S high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF 001003b KM41C1000BL KM41C1000BL KM41C1000BL- 110ns KM41C1Ã 130ns 150ns KM41C1000BL-10

    KM41C1002

    Abstract: No abstract text available
    Text: d e | 7 i y m 4 a ooossob 2 |~¿ SAMSUNG SEMICONDUCTOR INC Tfi X.'Xv5:v r ^ F î PRELIMINARY SPECIFICATION KM41C1002 CMOS DRAM 1M x 1 Bit Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002 Is a CMOS high speed


    OCR Scan     		PDF KM41C1002 KM41C1002 576x1 KM41C1002P KM41C1002J KM41C1002Z