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    SAMSUNG MODULE Search Results

    SAMSUNG MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OPTREX DMC 20261

    Abstract: futaba OPTREX DMC 50387 NA202SD16 CU20045SCPB-W5J CU16025ECPB-W2J NA204SD02 cu16025ecpb-w6j FUTABA NA202SD16 NA202SD
    Text: U VERSION-COMPARISON CHARTS. MODULE MANUFACTURER 2X16 Noritake Noritake Futaba Samsung Samsung Optrex Hantronix Hantronix Hantronix 2x16 Noritake 9mm Futaba Samsung Optrex Hantronix Hantronix 2x20 Noritake Futaba Samsung Optrex Hantronix Hantronix 2x20 Nortake


    Original     		PDF CU16025ECPB-W6J CU16025ECPB-W2J NA162SD07 146x62 182x33 182x34 190x54x13( OPTREX DMC 20261 futaba OPTREX DMC 50387 NA202SD16 CU20045SCPB-W5J CU16025ECPB-W2J NA204SD02 cu16025ecpb-w6j FUTABA NA202SD16 NA202SD

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5401000B/BG GD1514b 1Mx40 KMM5401000B bitsx40 20-pin 72-pin 110ns KMM5401000B-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM540512CM 512Kx40 KMM540512CM isa512Kbitsx40 256Kx4 20-pin 72-pin KMM540512CM-6 KMM540512CM-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M5324000V/VG/VP KMM5324000V bitsx32 24-pin 72-pin 110ns KMM5324000V-7 130ns KMM5324000V-8

    samsung LRA

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM536512W3/W3G KMM536512W3 a512K 40-pin 72-pin 22fiF KMM536512W3-7 130ns KMM536512W3-8 samsung LRA

    Untitled

    Abstract: No abstract text available
    Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


    OCR Scan     		PDF G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DD1S1S2 Ô27 I SMGK KMM5401000BM DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000BM is a 1M b itsx4 0 Dynamic RAM high density m em ory module. The Samsung


    OCR Scan     		PDF KMM5401000BM 1Mx40 KMM5401000BM 20-pin 72-pin 22/iF 110ns KMM5401000BM-7 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6

    KMM5361000

    Abstract: KMM5361000/A
    Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5361000 KMM5361000 bitsX36 20-pin 72-pin 150ns KMM5361000-10 KMM5361000- KMM5361000/A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5402000BM 2Mx40 KMM5402000BM bitsx40 20-pin 72-pin 22fiF 110ns KMM5402000BM-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM584000B KMM584000B KM41C4000BJ 20-pin 30-pin 22/iF KMM584000B-6 110ns M584000B-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM581000B 581000B KMM581 KM41C1OOOBJ 20-pln 30-pin 581000B- 130ns 150ns

    SP16K

    Abstract: kmm5362003
    Text: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung


    OCR Scan     		PDF D015BbB SP16K KMM5362003/G KMM5362003-7 KMM5362003-8 110ns 150ns in20-pin SP16K kmm5362003

    KMM581000BN

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung


    OCR Scan     		PDF 001S0Ã KMM581020BN KMM581020BN KMM581000BN KM44C1000BU 20-pin 30-pin 22/tF 110ns KMM581020BN-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF GG1472D KMM532512W/WG KMM532512W 40-pin 72-pin 22jiF 130ns 150ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM591000BN KMM591000BN KM44C1000BJ 20-pin KM41C1000CJ 30-pin 110ns KMM591000BN-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000A1/A1G KMM5362000A1 bitsX36 20-pin 72-pin 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs


    OCR Scan     		PDF 00104SG KMM591000N KMM591000N KM44C1000J-1M 20-pin KM41C1000AJ-1M 20-pln 30-pin 150ns

    KM41C4000A

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • 7 ^ 4 1 4 2 00144^4 031 « S A C K KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM584000A KMM584000A KM41C4000AJ 20-pin 30-pin KMM584000A- 130ns 150ns KM41C4000A

    41C16000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 7Tfcj4142 KMM581000AN 581000AN 81000A KM44C1OOOAJ 20-pin 30-pin 581000AN- 130ns