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    SAMSUNG TRAY TAPE Search Results

    SAMSUNG TRAY TAPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    M30280F6HP#U9B Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), LQFP, /Tray/Embossed tape Visit Renesas Electronics Corporation
    M30280FAHP#U5B Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), LQFP, /Tray/Embossed tape Visit Renesas Electronics Corporation
    M30280FCHP#U7B Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), LQFP, /Tray/Embossed tape Visit Renesas Electronics Corporation
    M30290FAHP#U5A Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), LQFP, /Tray/Embossed tape Visit Renesas Electronics Corporation
    M30302FEPGP#U5 Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), LQFP, /Tray/Embossed tape Visit Renesas Electronics Corporation

    SAMSUNG TRAY TAPE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    Mos MARKING CODE

    Abstract: clcc tray transistor WLM package marking WF 5 CCD MARKING
    Text: Imaging Solutions Code Information • MOS • CIS • CCD August 2009 -1- Part Number Decoder MOS Code Information 1/2 Last Updated : August 2009 S5XXXXXXXX - XXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1. System LSI (S) 9~10. Mask Option 2. Large Classification : MOS (5)


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    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


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    BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    K9KAG08U0M-PIB0

    Abstract: K9KAG08U0M K9KAG08U0M-PCB0 K9KAG08U0MPCB0 samsung NAND Flash DIE K9KAG08U0M-PIB00 MATERIALS DECLARATION SAMSUNG Samsung EOL K9KAG08U0M-PC K9KAG08U0MPCK0
    Text: This content requires the latest Adobe . Flash player home > products > Flash > NAND Flash > SLC-large block search Flash product search NAND Flash SLC-small block SLC-large block NAND Flash > SLC-large block > K9KAG08U0M package & packing MLC-large block


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    K9KAG08U0M K9KAG08U0MPCB00 K9KAG08U0MPCB0 K9KAG08U0M-PCB00 K9KAG08U0M-PCB0T K9KAG08U0M-PCK00 K9KAG08U0M-PIB00 K9KAG08U0M-PIB0 K9KAG08U0M K9KAG08U0M-PCB0 samsung NAND Flash DIE MATERIALS DECLARATION SAMSUNG Samsung EOL K9KAG08U0M-PC K9KAG08U0MPCK0 PDF

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


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    FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64 PDF

    Polygon Mirror Scanner Motor

    Abstract: Polygon dmpsgc DMPSGC54A Polygon polygon mirror polygon mirror motor DMPSGC11A polygon motor POLYGON MOTOR with 12 mirror symbol laser scanner
    Text: Polygon Mirror Scanner Motor Polygon Mirror Scanner Motor • INTRODUCTION This polygon mirror scanner motor is designed to rotate at a constant designated speed. Polygon mirror scanner motor is core component in laser beam printer is applied OA appliance.


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    000times Polygon Mirror Scanner Motor Polygon dmpsgc DMPSGC54A Polygon polygon mirror polygon mirror motor DMPSGC11A polygon motor POLYGON MOTOR with 12 mirror symbol laser scanner PDF

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


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    BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe PDF

    S3F84VBXZZ-QT8B

    Abstract: S3FC40DXZZ-QA8D S6D0129 S3F84vb sc32442 S3F84VBXZZ-AT9B S3P848AX S3F84UAXZZ-QZ8A s3p863ax S3F441FXZZ-ETRF
    Text: Samsung Semiconductor, Inc. Product Selection Guide System LSI August 2007 SYSTEM LSI PAGE ASIC / FOUNDRY 3 ASIC ORDERING INFORMATION 4 CMOS IMAGE SENSORS 5 LCD DRIVER ICs 5-6 LCD DRIVER IC ORDERING INFORMATION 7 MOBILE APPLICATION PROCESSORS 8 HDTV/STB PRODUCTS


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    300mm SSTL18 BR-07-ALL-002 S3F84VBXZZ-QT8B S3FC40DXZZ-QA8D S6D0129 S3F84vb sc32442 S3F84VBXZZ-AT9B S3P848AX S3F84UAXZZ-QZ8A s3p863ax S3F441FXZZ-ETRF PDF

    K9WBG08U1M

    Abstract: Toggle DDR NAND flash K9WBG08U1M-PIB0 Samsung "NAND Flash" "ordering information" K9WBG08U1M-PCK0 k9wbg08u1 K9WBG08U1M-PIB0T NAND flash k9wbg08 Samsung EOL
    Text: home > Products > Flash > NAND Flash> Products > K9WBG08U1M Flash Product Search NAND Flash NAND Flash > SLC -large block > K9WBG08U1M Part Number Search Products package & packing EOL Products Toggle DDR NAND Flash Flash SSD NOR Flash Flash Cards production & availability


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    K9WBG08U1M K9WBG08U1M IIK00 -IIB00 Toggle DDR NAND flash K9WBG08U1M-PIB0 Samsung "NAND Flash" "ordering information" K9WBG08U1M-PCK0 k9wbg08u1 K9WBG08U1M-PIB0T NAND flash k9wbg08 Samsung EOL PDF

    WM-G1206M

    Abstract: WM-G1206M-6YLYa wm-g1206 wintek lcd Wintek WM-G1206M-6YLYa display Samsung KS0108 KS0107 wmg1206m-6yly LCM wintek
    Text: WM-G1206M-6YLYa Contents Page 1 Electronic Units .3 1.1 Absolute Maximum Ratings .3 1.2 Electrical Characteristics (VDD=4.5~5.5V,Ta=-30~85℃) .3


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    WM-G1206M-6YLYa WM-G1206M WM-G1206M-6YLYa wm-g1206 wintek lcd Wintek WM-G1206M-6YLYa display Samsung KS0108 KS0107 wmg1206m-6yly LCM wintek PDF

    WM-G1206A-6YLYg

    Abstract: wm-g1206a wintek lcd wm-g1206 LCM wintek KS0107 wintek WINTEK SPECIFICATION KS0108 64 x 128 Samsung KS0108
    Text: WM-G1206A-6YLYg Contents Page 1 Electronic 1.1 Absolute Maximum 1.2 Electrical Characteristics(VDD=5.0V,Ta=25℃) .3


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    WM-G1206A-6YLYg WM-G1206A-6YLYg wm-g1206a wintek lcd wm-g1206 LCM wintek KS0107 wintek WINTEK SPECIFICATION KS0108 64 x 128 Samsung KS0108 PDF

    K4S281632I-UC75

    Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
    Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K4S280432I K4S280832I K4S281632I 128Mb 215KB K4S281632I-TC75 K4S281632I-UC60 K4S281632I-UC75 K4S281632I-UI75 K4S281632I-UL75 K4S281632I 8MB SDRAM 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 PDF

    samsung K9 flash

    Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
    Text: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming


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    800MHz-40ns i850E K4X1G163PC 07-Sep-2010 D18ns TRP18ns TRCD18ns samsung K9 flash Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram PDF

    K4S161622H-UC60

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


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    K4S161622H 183MHz 166MHz K4S161622H-UC60 PDF

    256Kx18

    Abstract: No abstract text available
    Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM 4Mb Sync. Pipelined Burst SRAM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 100MHz 138MHz 200MHz 117MHz 166MHz PDF

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


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    K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND PDF

    date code marking samsung transistor

    Abstract: "MATERIAL DECLARATION SHEET" samsung Tray Tape MATERIALS DECLARATION SAMSUNG
    Text: K1S64161CC UtRAM Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Advanced 0.1 Revised - Filled out ICC2 and ISB1 value ICC2 max : 40mA


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    K1S64161CC 4Mx16 Q4/2004 Q2/2007 Q3/2007 205KB K1S64161CC-BI700 K1S64161CC-BI70T K1S64161CC-W3000 date code marking samsung transistor "MATERIAL DECLARATION SHEET" samsung Tray Tape MATERIALS DECLARATION SAMSUNG PDF

    K7M323635C

    Abstract: K7M323635C-PC75
    Text: K7M323635C K7M321835C 1Mx36 & 2Mx18 Flow-Through NtRAMTM 36Mb NtRAMTM Specification 100 TQFP with Pb / Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K7M323635C K7M321835C 1Mx36 2Mx18 equipmC-PI750 Q1/2006 Q2/2006 386KB 140KB K7M323635C-PC750 K7M323635C-PC75 PDF

    csp defects

    Abstract: handling damage LGA socket MANUAL PCB Samsung MCP 1mm pitch BGA socket air handling unit CRACK pcb substrate HCFC141B
    Text: USER’S MANUAL Chip Scale Package • To make a win-win situation for CSP products supplier and customer, Samsung provides the information of CSP package’s characteristics and manuals to maintain high quality so that the problems of customer process can be minimized or prevented


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    150um) 20mils x20mil csp defects handling damage LGA socket MANUAL PCB Samsung MCP 1mm pitch BGA socket air handling unit CRACK pcb substrate HCFC141B PDF

    16M NtRAM samsung

    Abstract: 9p marking
    Text: K7N643645M K7N641845M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAMTM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz


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    K7N643645M K7N641845M 2Mx36 4Mx18-Bit 4Mx18 200MHz) K7N6436 SG200602847 16M NtRAM samsung 9p marking PDF

    tsop-ii 66 JEDEC TRAY

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K4D261638F 128Mbit 183MHz 166MHz tsop-ii 66 JEDEC TRAY PDF

    50K preset

    Abstract: servo motor control for radio control TA2065F TC9243F TC9243P TC9284BF TC9309AF-125 ic AM LW k2778 toshiba motor
    Text: TOSHIBA TC9309AF-125 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 9 3 0 9 A F - 1 25 SINGLE CHIP DIGITAL TUNING SYSTEM FOR 3 DISC CD CHANGER UNIT TC9309AF-125 is a CMOS LSI designed for a PLL frequency synthesizer radio system corresponded to


    OCR Scan
    TC9309AF-125 TC9309AF-1 TC9309AF-125 TC9284BF 1620k 28S32 QFP-80pin AMin71 50K preset servo motor control for radio control TA2065F TC9243F TC9243P ic AM LW k2778 toshiba motor PDF