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    Lumberg Automation RSC 5/9 (ALTERNATE: 600005195)

    CONNECTOR, M12 FA MALE STRAIGHT, 5 POLE, BLACK, 4-8MM CABLE OD | Lumberg Automation / Hirschmann RSC 5/9
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    RS RSC 5/9 (ALTERNATE: 600005195) Bulk 66 5 Weeks 1
    • 1 $15.42
    • 10 $14.19
    • 100 $11.88
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    • 10000 $11.88
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    SC59A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3J


    Original     		PDF DB3X407K UL-94 DB3X407K0L

    drc2123

    Abstract: dra2123
    Text: Doc No. TT4-EA-11722 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123J0L DRA2123J0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2123J 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat


    Original     		PDF TT4-EA-11722 DRA2123J0L DRC2123J UL-94 drc2123 dra2123

    Untitled

    Abstract: No abstract text available
    Text: DB3X313F Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original     		PDF DB3X313F UL-94 DB2J313 DB3X313F0L SC-59A O-236AA/SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14185 Revision. 3 Product Standards Zener Diode DZ3X056D0L DZ3X056D0L Silicon epitaxial planar type Unit: mm 2.9 For surge absorption circuit 0.4 0.16 3 • Features 1.5 2.8  Excellent rising characteristics of zner current Iz  Low zener operating resistance Rz


    Original     		PDF TT4-EA-14185 DZ3X056D0L UL-94

    Untitled

    Abstract: No abstract text available
    Text: DB3X315E Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5D


    Original     		PDF DB3X315E UL-94 DB3X315E0L

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12381 Revision. 3 Product Standards Switching Diode DA3X103E0L DA3X103E0L Silicon epitaxial planar type Unit: mm For high speed switching circuits DA3J103E in Mini3 type package 2.9 0.4 0.16 3 • Features 1.5 2.8  Short reverse recovery time trr


    Original     		PDF TT4-EA-12381 DA3X103E0L DA3J103E UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 • Features 1.5 2.8  Low forward voltage VF  Forward current Average IF(AV) = 1 A rectification is possible


    Original     		PDF TT4-EA-12493 DB3X317K0L UL-94

    Untitled

    Abstract: No abstract text available
    Text: DB3X313N Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original     		PDF DB3X313N UL-94 DB2J313 DB3X313N0L SC-59A O-236AA/SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11717 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2114Y0L DRA2114Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2114Y 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat


    Original     		PDF TT4-EA-11717 DRA2114Y0L DRC2114Y UL-94

    Untitled

    Abstract: No abstract text available
    Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)


    Original     		PDF 2SK2980 REJ03G1061-0400 ADE-208-571B) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings


    Original     		PDF 2SC2620 REJ03G0704-0200 ADE-208-1071) PLSP0003ZB-A

    27631

    Abstract: A 27631 2 wire LT HALL SENSOR Allegro Hall-Effect ICs A3260 A3260ELHLT A3260EUA A3260LLHLT A3260LUA HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E
    Text: A3260 2-Wire Chopper Stabilized Precision Hall Effect Bipolar Switch Discontinued Product These parts are no longer in production The device should not be purchased for new design applications. Samples are no longer available. Date of status change: April 28, 2007


    Original     		PDF A3260 27631 A 27631 2 wire LT HALL SENSOR Allegro Hall-Effect ICs A3260 A3260ELHLT A3260EUA A3260LLHLT A3260LUA HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    PDTA114YEF

    Abstract: PDTA114YU PDTA114Y PDTA114YE PDTA114YK PDTA114YM PDTA114YS PDTA114YT SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114Y series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 09 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ


    Original     		PDF PDTA114Y R75/04/pp14 PDTA114YEF PDTA114YU PDTA114YE PDTA114YK PDTA114YM PDTA114YS PDTA114YT SC-75 SC-89

    PDTC113ZU

    Abstract: PDTA113Z PDTA113ZE PDTA113ZK PDTA113ZM PDTA113ZS PDTA113ZT PDTA113ZU SC-101 SC-43A
    Text: PDTA113Z series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ Rev. 04 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement


    Original     		PDF PDTA113Z PDTA113ZE OT416 SC-75 PDTC113ZE PDTA113ZK OT346 SC-59 PDTC113ZK PDTA113ZM PDTC113ZU PDTA113ZE PDTA113ZK PDTA113ZM PDTA113ZS PDTA113ZT PDTA113ZU SC-101 SC-43A

    BC817

    Abstract: PDTB123TK PDTB123TS PDTB123TT PDTD123T PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A
    Text: PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 21 July 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview


    Original     		PDF PDTD123T PDTD123TK OT346 SC-59A O-236 PDTB123TK PDTD123TS SC-43A PDTB123TS PDTD123TT BC817 PDTB123TK PDTB123TS PDTB123TT PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A

    TRANSISTOR SMD MARKING CODES

    Abstract: BC807 PDTA323TK PDTC323TK SC-59A transistor SMD MARKING CODE MARKING CODE SMD IC
    Text: PDTA323TK PNP 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 01 — 16 June 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET in a small SOT346 (SC-59A) SMD plastic package.


    Original     		PDF PDTA323TK OT346 SC-59A) PDTC323TK BC807 TRANSISTOR SMD MARKING CODES PDTA323TK PDTC323TK SC-59A transistor SMD MARKING CODE MARKING CODE SMD IC

    14584

    Abstract: PDTB123Y marking 43A sot23 BC817 PDTB123YK PDTB123YS PDTB123YT PDTD123YK PDTD123YS PDTD123YT
    Text: PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 12 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview


    Original     		PDF PDTD123Y PDTD123YK OT346 SC-59A O-236 PDTB123YK PDTD123YS SC-43A PDTB123YS PDTD123YT 14584 PDTB123Y marking 43A sot23 BC817 PDTB123YK PDTB123YS PDTB123YT PDTD123YK PDTD123YS PDTD123YT

    HVM187WK

    Abstract: SC-59A
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    HRW0202A

    Abstract: SC-59A
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    HVM187S

    Abstract: SC-59A
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    hitachi S17

    Abstract: HRW0202A SC-59A DSA003641
    Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HRW0202A ADE-208-209E hitachi S17 HRW0202A SC-59A DSA003641

    Untitled

    Abstract: No abstract text available
    Text: HSM113WK Silicon Schottky Barrier Diode for Battery Switch HITACHI ADE-208-025B Z Rev. 2 Features • The HSM113WK has two different (VF-IF) chips, and can change the main battery to the backup battery automatically. • MPAK package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF HSM113WK ADE-208-025B HSM113WK 200mA 100mA 200pF

    Untitled

    Abstract: No abstract text available
    Text: HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-091D Z Rev 4 Features • High reverse voltage. (VR= 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.


    OCR Scan     		PDF HSM83 ADE-208-091D 10msec. SC-59A

    Untitled

    Abstract: No abstract text available
    Text: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.


    OCR Scan     		PDF HSM88WK ADE-208-049F Jul1998 HSM88W 400nA SC-59A