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    SCHEMATIC DIAGRAM 500 WATT POWER AMPLIFIER FREE D Search Results

    SCHEMATIC DIAGRAM 500 WATT POWER AMPLIFIER FREE D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    SCHEMATIC DIAGRAM 500 WATT POWER AMPLIFIER FREE D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AH312-S8G 2 Watt, High Linearity InGaP HBT Amplifier Applications •    Final stage amplifiers for Repeaters Mobile Infrastructure Driver stage for High Power Amplifier LTE / WCDMA / EDGE / CDMA SOIC-8 Package Product Features     


    Original     		PDF AH312-S8G AH312-8SG

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA2118Z 850MHz SPA2118Z MCR03 ECB-101161 DS121024

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA2118Z 850MHz SPA2118Z MCR03 ECB-101161 DS110720

    AT880

    Abstract: lot code RFMD
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias


    Original     		PDF SPA2118Z 850MHz SPA2118Z ECB-101161 DS111219 AT880 lot code RFMD

    lot code RFMD

    Abstract: ECB-101161
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT


    Original     		PDF SPA2118Z 850MHz SPA2118Z 950MHz ECB-101161 DS120502 lot code RFMD

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA2118Z 850MHz SPA2118Z LL1608-FS 1008HQ MCR03

    3N138

    Abstract: CA3080 CA3080A 3080a ca3080e AN6668 pin diagram of ca3130 CA3080AE CA3080AM CA3080AM96
    Text: CA3080, CA3080A Data Sheet September 1998 File Number 475.4 2MHz, Operational Transconductance Amplifier OTA Features The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note


    Original     		PDF CA3080, CA3080A CA3080 CA3080A AN6668, 3N138 3080a ca3080e AN6668 pin diagram of ca3130 CA3080AE CA3080AM CA3080AM96

    ca3130 equivalents

    Abstract: 3N138 CA3080E CA3080 ca3140 equivalents CA3080A CA3080AE CA3080AM CA3080AM96 CA3080M
    Text: CA3080, CA3080A Data Sheet April 2001 File Number 475.5 2MHz, Operational Transconductance Amplifier OTA Features The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note


    Original     		PDF CA3080, CA3080A CA3080 CA3080A AN6668, ca3130 equivalents 3N138 CA3080E ca3140 equivalents CA3080AE CA3080AM CA3080AM96 CA3080M

    3N138

    Abstract: CA3080 AN6668 3080A 4000 watts power amplifier circuit diagram CA3080A operational transconductance amplifier CA3130 peak detector how to use CA3080E CA3160
    Text: CA3080, CA3080A Data Sheet tle 30 08 Hz ernal sc uce pliA tho ds rpon, ior, le, sco ce li- April 2001 File Number 475.5 2MHz, Operational Transconductance Amplifier OTA) Features The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note


    Original     		PDF CA3080, CA3080A CA3080 CA3080A AN6668, 3N138 AN6668 3080A 4000 watts power amplifier circuit diagram operational transconductance amplifier CA3130 peak detector how to use CA3080E CA3160

    tip420

    Abstract: 12 volts 50 watt stereo amplifier schematic diagram LM391N 90 schematic diagram 800 watt power amplifier free d LM391N lm391 LM391N-100 LM391N equivalent 2N5880 equivalent TIP41A equivalent
    Text: LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity performance distinguish this IC The LM391 is internally protected for output faults and thermal overloads circuitry providing output transistor protection is user programmable


    Original     		PDF LM391 tip420 12 volts 50 watt stereo amplifier schematic diagram LM391N 90 schematic diagram 800 watt power amplifier free d LM391N LM391N-100 LM391N equivalent 2N5880 equivalent TIP41A equivalent

    LM391N 90

    Abstract: LM391N equivalent schematic diagram 800 watt power amplifier free d irc pw5 LM391N-100 12 volts 50 watt stereo amplifier schematic diagram 2N5880 equivalent LM391n lm391n amplifier schematic diagram 500 watt power amplifier free d
    Text: LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity performance distinguish this IC The LM391 is internally protected for output faults and thermal overloads circuitry providing output transistor protection is user programmable


    Original     		PDF LM391 LM391N 90 LM391N equivalent schematic diagram 800 watt power amplifier free d irc pw5 LM391N-100 12 volts 50 watt stereo amplifier schematic diagram 2N5880 equivalent LM391n lm391n amplifier schematic diagram 500 watt power amplifier free d

    KT 805

    Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
    Text: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which


    Original     		PDF AN-60-010) AN-60-010 M120106 AN60010 KT 805 Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM

    Untitled

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT


    Original     		PDF SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz the-9421 DS110720

    25c2625

    Abstract: ECB-101161 267M3502104
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz DS121024 25c2625 ECB-101161 267M3502104

    Untitled

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT


    Original     		PDF SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz SPA2318ZSQ

    an 214 amp schematic diagram

    Abstract: ROHM MCR03 ECB-101161
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz an 214 amp schematic diagram ROHM MCR03 ECB-101161

    AD8072

    Abstract: AD8072JN AD8072JR AD8072JR-REEL AD8073 AD8073JN
    Text: a Low Cost, Dual/Triple Video Amplifiers AD8072/AD8073 FEATURES Very Low Cost Good Video Specifications RL = 150 ⍀ Gain Flatness of 0.1 dB to 10 MHz 0.05% Differential Gain Error 0.1؇ Differential Phase Error Low Power 3.5 mA/Amplifier Supply Current


    Original     		PDF AD8072/AD8073 C2126 AD8072 AD8072JN AD8072JR AD8072JR-REEL AD8073 AD8073JN

    AD8072JR

    Abstract: AD8072JR-REEL AD8073 AD8073JN AD8072 AD8072JN
    Text: a Low Cost, Dual/Triple Video Amplifiers AD8072/AD8073 FEATURES Very Low Cost Good Video Specifications RL = 150 ⍀ Gain Flatness of 0.1 dB to 10 MHz 0.05% Differential Gain Error 0.1؇ Differential Phase Error Low Power 3.5 mA/Amplifier Supply Current


    Original     		PDF AD8072/AD8073 AD8072JR AD8072JR-REEL AD8073 AD8073JN AD8072 AD8072JN

    NEC2501 Optocoupler

    Abstract: NEC2501 Optocoupler free TOP204Yai equivalent TOPSWITCH DN-8 PWR-TOP200YAI AN-16 topswitch TOPSWITCH DN-14 nec2501 TOPSWITCH DN-7 AN-14 topswitch
    Text: TOPSwitch Tips, Techniques, and Troubleshooting Guide Application Note AN-14 Answers to All Common TOPSwitch Technical Questions can be found in this application note, the TOPSwitch Data Sheets, the TOPSwitch Design Notes, and the TOPSwitch reference design/evaluation board documentation. The fastest


    Original     		PDF AN-14 AN-16 NEC2501 Optocoupler NEC2501 Optocoupler free TOP204Yai equivalent TOPSWITCH DN-8 PWR-TOP200YAI AN-16 topswitch TOPSWITCH DN-14 nec2501 TOPSWITCH DN-7 AN-14 topswitch

    scr preregulator

    Abstract: UC 3245 220 microfarad 35v electrolytic capacitor UNITRODE application note u132 ic u1 741 opamp U132 capacitor, 1 microfarad 16v Design equations of high-power-factor flyback flyback pfc using voltage mode control pwm any circuit using irf830
    Text: U-132 APPLICATION NOTE POWER FACTOR CORRECTION USING THE UC3852 CONTROLLED ON-TIME ZERO CURRENT SWITCHING TECHNIQUE BILL ANDREYCAK INTRODUCTION The controlled on-time, zero current switching technique provides a simple and efficient solution to obtaining high power factor correction. This discontinuous inductor current approach


    Original     		PDF U-132 UC3852 IRF830 scr preregulator UC 3245 220 microfarad 35v electrolytic capacitor UNITRODE application note u132 ic u1 741 opamp U132 capacitor, 1 microfarad 16v Design equations of high-power-factor flyback flyback pfc using voltage mode control pwm any circuit using irf830

    NJL0281DG

    Abstract: NJL0302DG NJL0302D NJL0281A NJL0281D NJL0302A thermaltrak
    Text: NJL0281D NPN NJL0302D (PNP) Complementary ThermalTrakt Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor


    Original     		PDF NJL0281D NJL0302D O-264, 340AA NJL0281D/D NJL0281DG NJL0302DG NJL0302D NJL0281A NJL0281D NJL0302A thermaltrak

    ca3080

    Abstract: 4000 w power amplifier circuit diagram class d function generator circuit schematic diagram full ca3080a ca3080e in 4754 3M specification
    Text: CA3080, CA3080A S e m iconductor September 1998 2MHz, Operational Transconductance Amplifier OTA T h e C A 3 0 8 0 and C A 3 0 8 0 A types are G a ta b le -G a in Blocks w hich utilize the unique o p e ra tio n a l-tra n s co n d u c ta n c e am plifier (O TA) con cept d es c rib e d in A pplication N o te


    OCR Scan     		PDF CA3080, CA3080A ca3080 4000 w power amplifier circuit diagram class d function generator circuit schematic diagram full ca3080a ca3080e in 4754 3M specification

    800w power amplifier circuit diagram

    Abstract: 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v
    Text: ELECTRONIC MEASUREMENTS, INC. 405 ESSEX RD., NEPTUNE, N.J. 07753 83 458-001 - FIVE YEAR WARRANTY El e c t r o n i c Me as ur em e nt s, Inc. w a r r a n t s this equipment m a n u f a c t u r e d by l i b and sold by us Dr our a u t h o r i z e d agents to a m a n u f a c t u r e r or


    OCR Scan     		PDF R207B 2-30K-5W CI47P 2-I5-25W 25K-5W IN4740A MR752 2-30K -J5-23W 800w power amplifier circuit diagram 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v

    Untitled

    Abstract: No abstract text available
    Text: ANALOG ► DEVICES Dual, Low Power Video Op Amp FUNCTIONAL BLOCK DIAGRAM FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V / jas Slew Rate 80 ns Settling Time to 0.01% Low Power


    OCR Scan     		PDF AD828