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    SCHOTTKY CLAMPED Search Results

    SCHOTTKY CLAMPED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY CLAMPED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    how to test tvs diode

    Abstract: TVS AE introduce TVS SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A "very low leakage" tvs 400w ballast 500w two switch forward
    Text: of the Silicon Schottky rectifier can be addressed by fabricating the devices by using other semiconductor materials, such as gallium arsenide and silicon carbide. Introduction To SCHOTTKY Rectifier and Application Guidelines Schottky diodes have positive and negative sides. They are shown below.


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    block diagram of schottky diode

    Abstract: astec ps Astec Semiconductor diode schottky code 10 ASDN010 ASDN010MWP schottky diode
    Text: Schottky Diode Array ASDN010 ASDN010 Schottky Diode Array Features Description • Provides protection regardless of card loading conditions • Fast turn on and reverse revovery characteristics The ASDN010 is a Schottky Diode Memory Bus Terminator designed to eliminate overshoot and undershoot problems caused by reflections on high speed


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    PDF ASDN010 ASDN010 block diagram of schottky diode astec ps Astec Semiconductor diode schottky code 10 ASDN010MWP schottky diode

    IRF7335D1

    Abstract: No abstract text available
    Text: PD- 94546 IRF7335D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode


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    PDF IRF7335D1 IRF7335D1

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    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

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    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09

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    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

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    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA50SICP12-227 OT-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA50SIPC12 99E-16 3E-05

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    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    AC/ACT CMOS family characteristics

    Abstract: AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter AN-6525 HARRIS PACKAGE LOGIC FCT scr 2 22m four-layer diode act240 harris
    Text: Technical Overview Features AC/ACT Family Features The Harris AC/ACT series of Advanced High Speed CMOS Integrated Circuits is comprised of a broad range of logic types equivalent in performance and speed to FAST, AS Advanced Schottky , and S (Schottky) bipolar types, but


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    PDF CD54/74ACTXXX-Series AC/ACT CMOS family characteristics AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter AN-6525 HARRIS PACKAGE LOGIC FCT scr 2 22m four-layer diode act240 harris

    lbxq

    Abstract: AOT-2015 1001AS-100M HPW1751B GMK316BJ105ML LQH2MCN100K02 LQH32CN100K53 LT3491 LT3491ESC8 PWM RGB LED DRIVER
    Text: LT3491 White LED Driver in SC70 with Integrated Schottky U FEATURES DESCRIPTIO • Drives Up to Six White LEDs from a 3V Supply High Side Sense Allows “One Wire Current Source” Internal Schottky Diode One Pin Dimming and Shutdown 27V Open LED Protection


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    PDF LT3491 LT3466/LT3466-1 TSSOP-16 LT3486 100mA 3491f lbxq AOT-2015 1001AS-100M HPW1751B GMK316BJ105ML LQH2MCN100K02 LQH32CN100K53 LT3491 LT3491ESC8 PWM RGB LED DRIVER

    FET MARKING QG

    Abstract: ON QG FET 6 PIN IRF7901D1
    Text: PD - 93844A IRF7901D1 • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier Dual FETKYTM


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    PDF 3844A IRF7901D1 FET MARKING QG ON QG FET 6 PIN IRF7901D1

    Untitled

    Abstract: No abstract text available
    Text: PD - 95867B IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf


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    PDF 95867B IRF6691 IRF6691

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    Abstract: No abstract text available
    Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf


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    PDF 95867D IRF6691 IRF6691

    D312 diode

    Abstract: ltaft d312 6 pin Taiyo 93-R d312 LQH32CN220 diode D312 LTC3412 white led driver LT3465
    Text: LT3465/LT3465A 1.2MHz/2.4MHz White LED Step-Up Converters with Built-In Schottky in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Inherently Matched LED Current Drives Up to Six LEDs from a 3.6V Supply No External Schottky Diode Required


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    PDF LT3465/LT3465A LT3465) LT3465A) OT-23 LT3465 TSSOP16E 600mA/1 D312 diode ltaft d312 6 pin Taiyo 93-R d312 LQH32CN220 diode D312 LTC3412 white led driver

    SN74LS83

    Abstract: sn54ls83 1N3064 SchottkyBarrierDiode
    Text: LOW-POWER SCHOTTKY CIRCUIT TYPES SN54LS83, SN74LS8, 4-BIT BINARY FULL ADDER! TTL M SI HIGH-SPEED TTL 4-BIT FULL ADDERS • Schottky-Diode-Clamped Transistors* » CO c: Low Power Dissipation 75 mW Typical FOR APPLICATION IN Digital Computer Systems • z:


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    PDF SN54LS83, SN74LS8! SN54LS83 SN74LS83 Schottky-barrie12 1N3064 SchottkyBarrierDiode

    SN7401

    Abstract: National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27
    Text: GENERAL INFORMATION ORDERING INSTRUCTIONS AND MECHANICAL DATA FUNCTIONAL INDEX/SELECTION GUIDE PRODUCT GUIDE ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS PROGRAMMABLE LOGIC ARRAYS BETA PRODUCTS EXPLANATION OF NEW LOGIC SYMBOLS CONNECTOR AND KEYBOARD PRODUCTS


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    PDF SN54/74 SN54ALS8003 SN74ALS8003 SN7401 National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27

    KH 2222

    Abstract: diode 1n6095 sd41 jc 817
    Text: 1N6095 1N6096 SD41 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using the Schottky Barrier principle with a platinum barrier metal. These state-ol-the-art


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    PDF 1N6095 1N6096 KH 2222 diode 1n6095 sd41 jc 817

    1N5628

    Abstract: 12115X marking AB SOD123 1N5828
    Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5826 1N5827 1N5828 1N582S 1N5828 DO-35 1N5628 12115X marking AB SOD123

    6301-1 prom

    Abstract: 2708 eprom 6330 PROM programming 6331-1 prom 6306-1 prom MMI 6301-1 mmi 5349-1 MMI 6330 mmi 63xx 6331-1
    Text: Standard Performance Schottky Generic PROM Family 53 /63XX-i Features/Benefits Description • Standard Schottky processing • Reliability proven nichrome fusible links qualified for MIL-M-38510 The 53/63XX-1 -series generic PROM family offers the widest


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    PDF 53/63XX-i MIL-M-38510) 53/63XX-1 256x4 1024x4 240mA. 50-ohm 6301-1 prom 2708 eprom 6330 PROM programming 6331-1 prom 6306-1 prom MMI 6301-1 mmi 5349-1 MMI 6330 mmi 63xx 6331-1

    12v dc full wave bridge rectifier

    Abstract: 5000 watt full bridge design 1N5S34
    Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5832 1N5834 1N5S34 12v dc full wave bridge rectifier 5000 watt full bridge design

    1N5628

    Abstract: 1N5826
    Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5826 and 1N5628 are Motorola Preferred Devices Designer’s Data Sheet Pow er R ectifiers SCHOTTKY BA R R IE R RECTIFIERS . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5826 1N5827 1N5828 1N5628

    TTL LS 7400

    Abstract: ttl 7400 marking WV1 transistor TTL 7400 national semiconductor 74H Logic Family Specifications IC 7400 nand gate MIL-STD-806B LS TTL family characteristics transistor f259 internal structure 74LS00 nand gate
    Text: Introduction National Semiconductor Introduction FAST, an acronymn for Fairchild Advanced Schottky TTL, is a high-speed, low-power logic family that achieves speeds typically 30% faster than the Schottky family with a corre­ sponding power reduction of approximately 75%. It is fabri­


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    AN6525

    Abstract: 290MS 74ACxxx
    Text: Technical Overview Features AC/ACT Family Features The Harris AC/ACT series of Advanced High Speed CMOS Integrated Circuits is comprised of a broad range of logic types equivalent in performance and speed to FAST, AS Advanced Schottky , and S (Schottky) bipolar types, but


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    PDF CD54/74ACTXXX-Serles CD54/74ACXXX-Seiies 10MHz 10MHz, 74ACXXXX 54/74ACTXXXX AN6525 290MS 74ACxxx

    RCA 7651

    Abstract: Difference between LS, HC, HCT devices RCA-CD4000B ICAN-6525
    Text: Technical Overview FEATURES AC/ACT Family Features The RCA AC/ACT series of Advanced High-Speed CMOS Integrated Circuits is comprised of a broad range of logic types equivalent in performance and speed to FAST, AS Advanced Schottky , and S (Schottky) bipolar types, but


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    PDF CD54/74ACTXXX-serfes CD54/74ACXXX-series 54/74ACXXXX 54/74ACTXXXX RCA 7651 Difference between LS, HC, HCT devices RCA-CD4000B ICAN-6525