e3p1
Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Text: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die
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NTMSD3P102R2
NTMD3P102R2/D
e3p1
MOSFET 1052
NTMSD3P102R2
NTMSD3P102R2G
NTMSD3P102R2SG
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E3p1
Abstract: No abstract text available
Text: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die
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NTMSD3P102R2
NTMD3P102R2/D
E3p1
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e3p1
Abstract: NTMSD3P102R2SG MC 1200 Motor Control Board NTMSD3P102R2 NTMSD3P102R2G
Text: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die
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NTMSD3P102R2
NTMD3P102R2/D
e3p1
NTMSD3P102R2SG
MC 1200 Motor Control Board
NTMSD3P102R2
NTMSD3P102R2G
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sd1035
Abstract: SD10454 RS-296-E SD1030 SD1030-T3 SD1030-TB SD1040 SD1045 SD1045-T3 SD-1030TB
Text: SD1030 – SD1045 WTE POWER SEMICONDUCTORS Pb 10A SCHOTTKY BARRIER DIODE Features !" Schottky Barrier Chip !" Guard Ring Die Construction for Transient Protection !" High Current Capability !" Low Power Loss, High Efficiency !" High Surge Current Capability
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SD1030
SD1045
DO-201AD
DO-201AD,
MIL-STD-202,
sd1035
SD10454
RS-296-E
SD1030
SD1030-T3
SD1030-TB
SD1040
SD1045
SD1045-T3
SD-1030TB
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Schottky diode Die IR
Abstract: No abstract text available
Text: CPD32X Schottky Diode Chip 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 w w w . c e n t r a l s e m i . c o m The CPD32X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods.
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CPD32X
CPD32X
27-May
Schottky diode Die IR
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Untitled
Abstract: No abstract text available
Text: CPD31X Schottky Diode Chip 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 w w w . c e n t r a l s e m i . c o m The CPD31X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods.
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CPD31X
CPD31X
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Untitled
Abstract: No abstract text available
Text: CPD31X Schottky Diode Chip w w w. c e n t r a l s e m i . c o m The CPD31X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods. Parametrically, the device is extremely energy efficient as a result of low forward and reverse
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CPD31X
CPD31X
CPD31X-WN:
CPD31X-WR:
11-August
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sb240 diode
Abstract: diode sb260 diode SB2100 SB2100 RS-296-E SB220 SB230 SB240 SB250 SB260
Text: SB220 – SB2100 WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB220
SB2100
DO-15
DO-15,
MIL-STD-202,
sb240 diode
diode sb260
diode SB2100
SB2100
RS-296-E
SB220
SB230
SB240
SB250
SB260
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SB1100 schottky diode
Abstract: RS-296-E SB1100 SB130 SB140 SB150 SB160 SB180 DO41
Text: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB120
SB1100
DO-41
DO-41,
MIL-STD-202,
SB1100 schottky diode
RS-296-E
SB1100
SB130
SB140
SB150
SB160
SB180
DO41
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SR5100 diode
Abstract: SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550
Text: SR520 – SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR520
SR5100
DO-201AD
DO-201AD,
MIL-STD-202,
SR5100 diode
SR560 diode
SR5100
SR560
SR530
Diode SR5100
SR540
RS-296-E
SR520
SR550
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diode sb5100
Abstract: SB520-SB5100 Diode SB530 RS-296-E SB5100 SB520 SB530 SB540 SB550 SB560
Text: SB520 – SB5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB520
SB5100
DO-201AD
DO-201AD,
MIL-STD-202,
diode sb5100
SB520-SB5100
Diode SB530
RS-296-E
SB5100
SB520
SB530
SB540
SB550
SB560
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SR260 Diode
Abstract: Diode SR240 SR260 Diode construction sr240 diode equivalent components of diode sr2100 RS-296-E SR2100 SR220 SR230 SR240
Text: SR220 – SR2100 WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR220
SR2100
DO-15
DO-15,
MIL-STD-202,
SR260 Diode
Diode SR240
SR260 Diode construction
sr240 diode
equivalent components of diode sr2100
RS-296-E
SR2100
SR220
SR230
SR240
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Diode SR3100
Abstract: SR360 diode SR380 diode SR3100 SR3100 diode RS-296-E SR320 SR330 SR340 SR350
Text: SR320 – SR3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR320
SR3100
DO-201AD
DO-201AD,
MIL-STD-202,
Diode SR3100
SR360 diode
SR380 diode
SR3100
SR3100 diode
RS-296-E
SR320
SR330
SR340
SR350
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DIODE 1N5822
Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
DIODE 1N5822
1N5821-T3
1N5820
1N5820-T3
1N5820-TB
1N5821
1N5821-TB
1N5822
RS-296-E
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SK3150
Abstract: No abstract text available
Text: SK3150 SK3150 Surface Mount Schottky Rectifier Diode Schottky Gleichrichter für die Oberflächenmontage Version 2014-06-16 Nominal current – Nennstrom 2.2±0.3 2.1±0.2 7.9±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.15 Type
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SK3150
DO-214AB
UL94V-0
SK3150
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SB360 diode
Abstract: SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380
Text: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB320
SB3100
DO-201AD
DO-201AD,
MIL-STD-202,
SB360 diode
SB320-SB3100
RS-296-E
SB3100
SB320
SB330
SB340
SB350
SB360
SB380
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1N5819
Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819
1N5817-1N5819
datasheets diode 1n5818
DIODE 1n5819
1N5817
1N5817-T3
1N5817-TB
1N5818
1N5818-T3
1N5818-TB
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diode SR160
Abstract: Diode SR1100 Diode SR140 RS-296-E SR1100 SR120 SR130 SR140 SR150 SR160
Text: SR120 – SR1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR120
SR1100
DO-41
DO-41,
MIL-STD-202,
diode SR160
Diode SR1100
Diode SR140
RS-296-E
SR1100
SR120
SR130
SR140
SR150
SR160
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SK1820D2
Abstract: No abstract text available
Text: SK1820D2 . SK1845D2 SK1820D2 . SK1845D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2012-03-01 Nominal current – Nennstrom 1.2 4.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung
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SK1820D2
SK1845D2
O-263AB
UL94V-0
Gree00
SK1820.
SK1820D2
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sk182
Abstract: No abstract text available
Text: SK1820D2 . SK1845D2 SK1820D2 . SK1845D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2011-04-07 1.2 4.5 Nominal current Nennstrom 10.25 ±0.5 ±0.2 4 Repetitive peak reverse voltage
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SK1820D2
SK1845D2
O-263AB
UL94V-0
SK1845D2
SK1820.
sk182
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SK1820
Abstract: SK1840D2 SK182 SK1840 40D2 sk183
Text: SK1820D2 . SK1840D2 SK1820D2 . SK1840D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2008-04-01 0.4 Nominal current Nennstrom 10.25 -0.1 4.5 ±0.2 4 Repetitive peak reverse voltage
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SK1820D2
SK1840D2
O-263AB
UL94V-0
SK1820.
SK1840
SK1820
SK1840D2
SK182
SK1840
40D2
sk183
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SK1820
Abstract: 40D2 SK1840D2
Text: SK1820D2 . SK1840D2 SK1820D2 . SK1840D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2010-09-22 1.2 4.5 Nominal current Nennstrom 10.25 ±0.5 ±0.2 4 Repetitive peak reverse voltage
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SK1820D2
SK1840D2
O-263AB
UL94V-0
SK1820.
SK1840
SK1820
40D2
SK1840D2
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SK1840
Abstract: SK1840D2 SK1820
Text: SK1820D2 . SK1845D2 SK1820D2 . SK1845D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2011-05-23 Nominal current – Nennstrom 1.2 4.5 10.25 ±0.5 ±0.2 Repetitive peak reverse voltage
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SK1820D2
SK1845D2
O-263AB
UL94V-0
SK1820.
SK1840
SK1840D2
SK1820
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SC043H100
Abstract: SC090H150 SC043H100S SC175h045s SC175S060A SC125H100A SC090H150A SC175H045 SC200H100S SC066S060
Text: AN-987 Utilizing SCHOTTKY Rectifier Die In Assembly by Bret Daniels Introduction Probing This application note describes the Schott ky rectifiers available from International Rectifier in die and wafer form. These epitaxial diode die feature a proprietary, high
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AN-987
SC043H100
SC090H150
SC043H100S
SC175h045s
SC175S060A
SC125H100A
SC090H150A
SC175H045
SC200H100S
SC066S060
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