RG70
Abstract: MBR0520 Two Terminals Schottky Barrier Diode
Text: Two Terminals Schottky Barrier Diode MBR0520 Two Terminals Schottky Barrier Diode Features • • • • Low Forward Voltage Very Small Conduction Losses Schottky Barrier Diodes Encapsulated in a SOD-123 Package RoHS Compliant SOD-123 Mechanical Data Case:
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MBR0520
OD-123
OD-123
OD-123,
MIL-STD-202,
RG70
MBR0520
Two Terminals Schottky Barrier Diode
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bas40h
Abstract: data sheet for all smd components transistor smd marking AJ
Text: BAS40H General-purpose Schottky diode in small SOD123F package Rev. 01 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description General purpose Schottky diode, encapsulated in a SOD123F small and flat lead SMD plastic package. 1.2 Features
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BAS40H
OD123F
bas40h
data sheet for all smd components
transistor smd marking AJ
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data sheet for all smd components
Abstract: DIODE Sp marking code SMD AH smd diode schottky code marking 29 SOD123F SOD123F footprint BAS70H
Text: BAS70H General-purpose Schottky diode in small SOD123F package Rev. 01 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description General purpose Schottky diode, encapsulated in a SOD123F small and flat lead SMD plastic package. 1.2 Features
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BAS70H
OD123F
data sheet for all smd components
DIODE Sp marking code
SMD AH
smd diode schottky code marking 29
SOD123F
SOD123F footprint
BAS70H
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4245
Abstract: SMD M1B BAT56 SMD M1B diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current
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BAT56
SCD24
4245
SMD M1B
BAT56
SMD M1B diode
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smd diode 708
Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed
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BAT93
SCD24
smd diode 708
SMD M1B diode
M1B Diode smd
CD 4938
Silicon Schottky Diode sod123
SMD M1B
str 541
BAT93
SCD24
ir 7811
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top metal
Abstract: silan
Text: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB035040AML
2SB035040AML
2SB035040AMLJY-155
2SB035040AMLJL-155
500dice/wafer
top metal
silan
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50um silicon die attach
Abstract: No abstract text available
Text: 2SB065040ML 2SB065040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB065040ML
2SB065040ML
2SB065040MLJY-180
2SB065040MLJY-155
2SB065040MLJL-180
2SB065040MLJL-155
828dice/wafer
50um silicon die attach
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD B5817W Preliminary DIODE SCHOTTKY DIODE DESCRIPTION The UTC B5817W is a schottky diode, it uses UTC’s advanced technology to provide customers with low forward voltage drop, etc. The UTC B5817W is suitable for low voltage and high frequency
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B5817W
B5817W
B5817WG-CA2-R
OD-123
QW-R201-096
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ir540
Abstract: MBR0540 MBR0540 SOD-123
Text: Preliminary Data Sheet PD-20203 12/01 MBR0540 SCHOTTKY DIODE 0.5 Amp SOD123 Major Ratings and Characteristics Characteristics Description/ Features Value Units IF AV (DC) 0.5 A VRRM 40 V This Schottky diode is ideally suited for low voltage, high frequency operation, as freewheeling and polarity protection.
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PD-20203
MBR0540
OD123
OD-123
IR540
ir540
MBR0540
MBR0540 SOD-123
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Ah 661
Abstract: 200-052 diode 824 DIODE Sp marking code TAITRON two transistor forward TSD14W TSD14 SOD-123 marking code 24 COLOR MARKING CODE ON DIODE
Text: Two Terminals Schottky Barrier Diode TSD14W Two Terminals Schottky Barrier Diode Features • • • • • Fast switching speed Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC High conductor RoHS compliant
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TSD14W
OD-123
OD-123,
MIL-STD-202,
Ah 661
200-052
diode 824
DIODE Sp marking code
TAITRON
two transistor forward
TSD14W
TSD14
SOD-123 marking code 24
COLOR MARKING CODE ON DIODE
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IR520
Abstract: MBR0520 Schottky Diode SOD123
Text: Preliminary Data Sheet PD-20226 01/02 MBR0520 0.5 Amp SCHOTTKY DIODE SOD123 Major Ratings and Characteristics Characteristics Description/ Features Value Units IF AV DC 0.5 A VRRM 20 V This Schottky diode is ideally suited for low voltage, high frequency operation, as freewheeling and polarity protection.
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PD-20226
MBR0520
OD123
OD-123
IR520
IR520
MBR0520
Schottky Diode SOD123
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BAT46WH
Abstract: No abstract text available
Text: BAT46WH Single Schottky barrier diode Rev. 1 — 27 July 2010 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small and flat lead SOD123F Surface-Mounted Device SMD plastic
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BAT46WH
OD123F
AEC-Q101
BAT46WH
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Untitled
Abstract: No abstract text available
Text: BAT54H Schottky barrier single diode in small SOD123F package 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic
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BAT54H
OD123F
AEC-Q101
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1N5819 SOD-123
Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L
1N5819-CA2-R
1N5819L-CA2-R
QW-R601-008
1N5819 SOD-123
Reverse polarity pulse plating
1N5819* diode
1N5819 SOD123
1N5819
1N5819-CA2-R
1N5819L
1N5819L-CA2-R
A1N5819
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1N5819* diode
Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L-CA2-R
1N5819G-CA2-R
QW-R601-008
1N5819* diode
1N5819 SOD-123
1N5819 diode
1N5819 SOD123
DIODE 1N5819 dc
transistor r601
DIODE 3a sod-123
DIODE 1n5819
1N5819
1N5819L-CA2-R
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Untitled
Abstract: No abstract text available
Text: BAT54H Schottky barrier single diode in small SOD123F package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD123F small and flat lead SMD plastic package.
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BAT54H
OD123F
BAT54H
771-BAT54H-T/R
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BAT54H
Abstract: SOD123F footprint
Text: BAT54H Schottky barrier single diode in small SOD123F package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD123F small and flat lead SMD plastic package.
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BAT54H
OD123F
BAT54H
SOD123F footprint
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Untitled
Abstract: No abstract text available
Text: 2SB065040MT 2SB065040MT SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB065040MT is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Low VF; ¾ Guard ring construction for transient protection.
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2SB065040MT
2SB065040MT
2SB065040MTJL-180
828dies/wafer
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Untitled
Abstract: No abstract text available
Text: SO D1 23F BAT46WH Single Schottky barrier diode Rev. 2 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small and flat lead SOD123F Surface-Mounted Device SMD plastic
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BAT46WH
OD123F
AEC-Q101
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DIODE Sp marking code
Abstract: SOD123F footprint data sheet for all smd components DIODE smd marking Ag single power diode package smd diode schottky code marking 29 SOD123F BAT54H
Text: BAT54H Schottky barrier single diode in small SOD123F package Rev. 01 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD123F small and flat lead SMD plastic package.
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BAT54H
OD123F
DIODE Sp marking code
SOD123F footprint
data sheet for all smd components
DIODE smd marking Ag
single power diode package
smd diode schottky code marking 29
SOD123F
BAT54H
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Untitled
Abstract: No abstract text available
Text: SO D1 23F BAT46WH Single Schottky barrier diode Rev. 2 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small and flat lead SOD123F Surface-Mounted Device SMD plastic
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BAT46WH
OD123F
AEC-Q101
771-BAT46WH115
BAT46WH
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Untitled
Abstract: No abstract text available
Text: SO D1 23F BAT46WH Single Schottky barrier diode Rev. 2 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small and flat lead SOD123F Surface-Mounted Device SMD plastic
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BAT46WH
OD123F
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD RB160M-60 Preliminary DIODE SCHOTTKY BARRIER DIODE DESCRIPTION The UTC RB160M-60 is a schottky barrier diode, it uses UTC’s advanced technology to provide customers with low reverse current and high reliability etc. The UTC RB160M-60 is suitable for general rectification.
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RB160M-60
RB160M-60
OD-123
RB160M-60L-CA2-R
RB160M-60G-CA2-R
QW-R60at
QW-R601-104
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smd diode 307
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65
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Q62702-A990
OD-123
100mA
smd diode 307
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