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    SCHOTTKY DIODES 16A Search Results

    SCHOTTKY DIODES 16A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODES 16A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WSD450F

    Abstract: No abstract text available
    Text: WSD450F Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 40 VOLTS Features: *Small mold type. *Low IR *High reliability. 3 Construction: Silicon epitaxial planer 1 2 SOT-323 SC-70 SOT-323 Outline Demensions Unit:mm A B T OP V IE W


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    PDF WSD450F OT-323 SC-70) OT-323 16-Aug-07 WSD450F

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes SBL1630,35,40,45,50,60 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency


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    PDF O-220A SBL1630 O-220A SBL1630 SBL1640 SBL1660 SBL1645 SBL1650

    LTC4352

    Abstract: LTM4608 MOSFET and parallel Schottky diode mosfet with Integrated Schottky Diodes DFN-12 LN1261CAL LN1351C SBG1025L Si7336ADP SMAJ12A
    Text: L DESIGN FEATURES 0V to 18V Ideal Diode Controller Saves Watts and Space over Schottky by Pinkesh Sachdev Introduction Schottky diodes are used in a variety of ways to implement multisource power systems. For instance, high availability electronic systems, such


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    PDF LTC4352 12-pin LTM4608 MOSFET and parallel Schottky diode mosfet with Integrated Schottky Diodes DFN-12 LN1261CAL LN1351C SBG1025L Si7336ADP SMAJ12A

    Infineon power diffusion process

    Abstract: Infineon diffusion solder IDL04G65C5 IPW60R075CP IDL10G65C5 SIC DIODES IDL12G65C5
    Text: Product Brief Features 650V SiC thinQ! Generation 5 diodes Your way is our way: improve efficiency and solution costs ThinQ!™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering


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    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


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    PDF 600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR830, 35, 40, 45, 50, 60 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency


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    PDF O-220A MBR830, O-220A 28petitive MBR830 MBR840 MBR860 MBR845

    AN2239

    Abstract: MOSFET and parallel Schottky diode schottky diode 16a 12v DIODE schottky diode schottky 16A STS12NH3LL STS20NHS3LL STS25NH3LL high power pulse generator with mosfet
    Text: AN2239 APPLICATION NOTE Maximizing Synchronous Buck Converter Efficiency with Standard STripFETs with Integrated Schottky Diodes Introduction This document explains the history, improvements, and performance evaluation of low voltage Power MOSFETs with advanced “strip” technology STripFET™ . The integration of a Schottky diode with the


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    PDF AN2239 AN2239 MOSFET and parallel Schottky diode schottky diode 16a 12v DIODE schottky diode schottky 16A STS12NH3LL STS20NHS3LL STS25NH3LL high power pulse generator with mosfet

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD126512 TECHNICAL DATA DATA SHEET 4807, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:


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    PDF SHD126512

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD126511 TECHNICAL DATA DATA SHEET 4806, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:


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    PDF SHD126511

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD126444 TECHNICAL DATA DATA SHEET 4788, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:


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    PDF SHD126444

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD126434 TECHNICAL DATA DATA SHEET 1009, REV. D SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:


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    PDF SHD126434

    Untitled

    Abstract: No abstract text available
    Text: MBR1650/MBRB1650 MBR1660/MBRB1660 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0728, Rev. - Green Products MBR1650/MBRB1650/MBR1660/MBRB1660 SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes


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    PDF MBR1650/MBRB1650 MBR1660/MBRB1660 N0728, MBR1650/MBRB1650/MBR1660/MBRB1660

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS MBRF16100CT Technical Data Data Sheet N0846, Rev. - Green Products MBRF16100CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •


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    PDF MBRF16100CT N0846, MBRF16100CT

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD126434 TECHNICAL DATA DATA SHEET 1009, REV. D SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:


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    PDF SHD126434

    6AI diode

    Abstract: diode L2.70 USD735 USD745 USD700 USD740 USD750
    Text: USD735 USD740 USD745 USD750 POWER SCHOTTKY RECTIFIERS 16A Pk, up to 50V DESCRIPTION The USD700 series of Schottky power rectifiers is ideally suited for output rectifiers and catch diodes in high frequency low voltage power supplies. FEATURES • Very Low Forward Voltage


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    PDF USD735 USD740 USD745 USD750 USD735 USD700 USD740 USD745 6AI diode diode L2.70 USD750

    USD945

    Abstract: USD935 USD900 USD940 USD950
    Text: POWER SCHOTTKY RECTIFIERS USD935 USD940 USD945 USD950 32A Pk, up to 50V DESCRIPTION The USD900 series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. FEATURES • Very Low Forward Voltage 0.5V max (g> 16A


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    PDF USD935 USD940 USD945 USD950 USD900 USD950

    USD945

    Abstract: USD900 USD920 USD935 USD940
    Text: POWER SCHOTTKY RECTIFIERS USD920 USD935 USD940 USD945 32A Pk, up to 45V DESCRIPTION The USD900 series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. FEATURES • Very Low Forward Voltage 0.5V max @ 16A


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    PDF USD920 USD935 USD940 USD945 USD900 USD945

    Untitled

    Abstract: No abstract text available
    Text: PBYR1635 PBYR1640 PBYR1645 y \ _ SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in


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    PDF PBYR1635 PBYR1640 PBYR1645 PBYR1635 temperatR1635 M3193

    TO220FL

    Abstract: 1FWJ43N 10FWJ2CZ47M 10GWJ2C42 10GWJ2CZ47C
    Text: High Efficiency Diodes HED P2 Average Forward Current <- Peak Repetitive Reverse Voltage Schottky B arrier Diodes (SBD) Peak Repetitive Reverse Voltage Average Forward Current <- ^ Package — 1A Single type 2A 3A Peak Forward Drop PW-Mini 0.55V DO-41 S


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    PDF DO-41 DO-201AD O-220NIS# 20FWJ2CZ4BM 20FWJ2CZ47M U20FWJ2C48M 30FWJ2C48M 30FWJ2CZ47M U30FWJ2C48M TO220FL 1FWJ43N 10FWJ2CZ47M 10GWJ2C42 10GWJ2CZ47C

    M3195

    Abstract: PBYR1635 PBYR1645 PBYR1640
    Text: 3fe>q- 3 2 0 PBYR1635 PBYR1640 PBYR1645 J v_ SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in


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    PDF PBYR1635 PBYR1640 PBYR1645 PBYR1635 M3194 M3195 M3195 PBYR1645 PBYR1640

    LS138

    Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC 54LS138 54LS138DMQB 54LS138FMQB 54LS138LMQB 54LS139 DM54LS138J DM54LS138W DM74LS138
    Text: S E M IC O N D U C T O R tm DM74LS138, DM74LS139 Decoders/Demultiplexers General Description cuit. All inputs are clam ped w ith high-perform ance Schottky diodes to suppress line-ringing and sim plify system design. These Schottky-clam ped circuits are designed to be used in


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    PDF DM74LS138, DM74LS139 LS138 64 CERAMIC LEADLESS CHIP CARRIER LCC 54LS138 54LS138DMQB 54LS138FMQB 54LS138LMQB 54LS139 DM54LS138J DM54LS138W DM74LS138

    Untitled

    Abstract: No abstract text available
    Text: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in


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    PDF PBYR1635 PBYR1640 PBYR1645 b5313 PRYR1fi45 bbS3T31 T-03-17 M3192