NTE5402
Abstract: NTE5401 NTE5405 NTE5404 NTE5406 NTE5400 NTE5403
Text: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with
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NTE5400
NTE5406
NTE5406
NTE5402
NTE5401
NTE5405
NTE5404
NTE5403
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NTE5402
Abstract: NTE5405 NTE5404 NTE5401 thyristor SCR 600V 8A NTE5406 NTE5400 To92 thyristor datasheet NTE5403
Text: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR−thyristor) rated at 0.8 amps RMS maximum on−state current, with
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NTE5400
NTE5406
NTE5406
NTE5402
NTE5405
NTE5404
NTE5401
thyristor SCR 600V 8A
To92 thyristor datasheet
NTE5403
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BAP1289
Abstract: 3 phase bridge scr drive circuit diagram
Text: APPLIED POWER SYSTEMS, INC. BAP1289 HV SCR Gate Driver Board System BAP1289 HIGH VOLTAGE ISOLATED SCR GATE DRIVER The BAP1289 provides a complete, reliable, turnkey solution to control single or multiple High Voltage SCR devices. High current FET amplifiers drive individual
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BAP1289
3 phase bridge scr drive circuit diagram
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SCR TRIGGER PULSE TRANSFORMER
Abstract: specifications of scr SCR TRIGGER PULSE circuit 3 phase scr drive circuit diagram 1 phase SCR TRIGGER PULSE TRANSFORMER SCR GATE DRIVER SCR TRIGGER PULSE 3 phase gate drive pulse transformer SCR PULSE transformer circuit scr drive circuit diagram
Text: APPLIED POWER SYSTEMS, INC. BAP1289 HV SCR Gate Driver Board System BAP1289 HIGH VOLTAGE ISOLATED SCR GATE DRIVER The BAP1289 provides a complete, reliable, turnkey solution to control single or multiple High Voltage SCR devices. High current FET amplifiers drive individual
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BAP1289
120VAC
HFBR-4532
HFBR-2524
HFBR-1524
SCR TRIGGER PULSE TRANSFORMER
specifications of scr
SCR TRIGGER PULSE circuit
3 phase scr drive circuit diagram
1 phase SCR TRIGGER PULSE TRANSFORMER
SCR GATE DRIVER
SCR TRIGGER PULSE 3 phase
gate drive pulse transformer
SCR PULSE transformer circuit
scr drive circuit diagram
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Untitled
Abstract: No abstract text available
Text: C702 Phase Control Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1000 Amperes 3200 Volts The C702 is a medium voltage, high current disc pack SCR employing a Bar gate, amplifying gate structure. This amplifying gate design allows the SCR to
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C702CB
200V-1000A
200ma
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NTE5438
Abstract: NTE5437
Text: NTE5437 & NTE5438 Silicon Controlled Rectifier SCR 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required.
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NTE5437
NTE5438
NTE5437
NTE5438
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thyristor powerex C702CB
Abstract: 726E-04 SCR 1000A C702 diode C702 C702CB thyristor cp 08
Text: C702 Phase Control Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1000 Amperes 3200 Volts The C702 is a medium voltage, high current disc pack SCR employing a Bar gate, amplifying gate structure. This amplifying gate design allows the SCR to
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C702CB
200V-1000A
200ma
thyristor powerex C702CB
726E-04
SCR 1000A
C702 diode
C702
thyristor cp 08
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battery charging circuit using scr
Abstract: SCR GATE DRIVER PEB4264 SCR Gate Drive GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR 8200M
Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR OVERVOLTAGE PROTECTION MAY 1998 - APRIL 2001 HIGH PERFORMANCE PROTECTION FOR SLICS WITH +VE & -VE BATTERY SUPPLIES ● ● ● D PACKAGE TOP VIEW
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TISP8200M,
TISP8201M,
TISP8200M
GR-1089-CORE
battery charging circuit using scr
SCR GATE DRIVER
PEB4264
SCR Gate Drive
TISP8200M
TISP8200MDR
TISP8201M
TISP8201MDR
8200M
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Untitled
Abstract: No abstract text available
Text: SO T2 23 MCR08BT1 SCR 23 July 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
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MCR08BT1
OT223
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Untitled
Abstract: No abstract text available
Text: SO T2 23 BT168GW SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
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BT168GW
OT223
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SCR GATE DRIVER
Abstract: SCR Gate Drive SCR gate drive circuit PEB4264 SCR TRANSISTOR SCR FAST SWITCHING GR-1089-CORE TISP8200M TISP8200MDR TISP8201M
Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR OVERVOLTAGE PROTECTION Copyright 2001, Power Innovations Limited, UK MAY 1998 - APRIL 2001 HIGH PERFORMANCE PROTECTION FOR SLICS WITH +VE & -VE BATTERY SUPPLIES
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TISP8200M,
TISP8201M,
TISP8200M
SCR GATE DRIVER
SCR Gate Drive
SCR gate drive circuit
PEB4264
SCR TRANSISTOR
SCR FAST SWITCHING
GR-1089-CORE
TISP8200M
TISP8200MDR
TISP8201M
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SCR 2000
Abstract: SCR TRANSISTOR
Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR OVERVOLTAGE PROTECTION Copyright 2000, Power Innovations Limited, UK MAY 1998 - OCTOBER 2000 HIGH PERFORMANCE PROTECTION FOR SLICS WITH +VE & -VE BATTERY SUPPLIES
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TISP8200M,
TISP8201M,
TISP8200M
10/1000rmed,
SCR 2000
SCR TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SO T2 23 BT168GW SCR 21 February 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
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BT168GW
OT223
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NTE5426
Abstract: 1A 400v scr to220
Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
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NTE5426
NTE5426
150mA
1A 400v scr to220
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600A thyristor scr
Abstract: T9KC tc7373
Text: T9KC_0603 Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 600 Amperes 6500 Volts WWW.PWRX.COM The T9KC is a high voltage, high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR
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T9KC650603DH
500V-600A
200ma
600A thyristor scr
T9KC
tc7373
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NTE5457
Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be
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NTE5452
NTE5458
NTE5458
NTE5452
NTE5453
NTE5457
NTE5455
NTE5456
SCR NTE5457
scr 5 amp
NTE5454
SCR TRIGGER PULSE circuit
SCR Gate Drive
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thyristor SCR 1000A
Abstract: T9KC650603DH T9KC 600A thyristor scr t9kc0603 thyristor SCR 600A thyristor 50V 1000A thyristor POWEREX
Text: T9KC_0603 Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 600 Amperes 6500 Volts WWW.PWRX.COM The T9KC is a high voltage, high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR
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T9KC650603DH
500V-600A
thyristor SCR 1000A
T9KC
600A thyristor scr
t9kc0603
thyristor SCR 600A
thyristor 50V 1000A
thyristor POWEREX
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NTE5426
Abstract: 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate
Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is
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NTE5426
NTE5426
150mA
1A 400v scr to220
SCR TRIGGER PULSE circuit
"Silicon Controlled Rectifier"
scr 250 amps
SCR RECTIFIER
SCR sensitive gate
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6500
Abstract: 600A thyristor scr
Text: T9KC_0603 Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 600 Amperes 6500 Volts WWW.PWRX.COM The T9KC is a high voltage, high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR
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T9KC650603DH
500V-600A
6500
600A thyristor scr
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Untitled
Abstract: No abstract text available
Text: TO -92 BT149G SCR 13 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 TO-92 plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.
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BT149G
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BAP1367
Abstract: SCR DRIVER SCR GATE DRIVER snubber of scr scr short circuit SCR gate driver circuit 4 pin SCR gate drive circuit single scr firing board gate firing of d.c drive SCR Gate Drive
Text: APPLIED POWER SYSTEMS, INC. BAP1367 QUAD SCR DRIVER Two Phase AC Transfer Switch Driver The BAP1367 Quad SCR Gate Driver provides complete gate drive control for four thyristors, configured individually or in anti-parallel as dual AC Switches. This driver accepts logic level control inputs and
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BAP1367
24VDC
I1367
SCR DRIVER
SCR GATE DRIVER
snubber of scr
scr short circuit
SCR gate driver circuit
4 pin SCR gate drive circuit
single scr firing board
gate firing of d.c drive
SCR Gate Drive
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Untitled
Abstract: No abstract text available
Text: T820_8004 Phase Control Thyristor 800 Amperes 1800 Volts Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com The T820 is a high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably
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T820188004DH
800V-800A
150ma
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NTE5457
Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be
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NTE5452
NTE5458
NTE5458
NTE5452
NTE5453
NTE5457
NTE5455
NTE5456
NTE5453
NTE5454
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bt168g
Abstract: No abstract text available
Text: TO -92 BT168G SCR 14 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 TO-92 plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.
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BT168G
bt168g
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