MARKING S1G
Abstract: SCT595 SMBTA06M SMBTA56M
Text: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA06M
SMBTA56M
VPW05980
SCT595
EHP00821
EHP00819
EHP00820
EHP00815
Nov-30-2001
MARKING S1G
SCT595
SMBTA06M
SMBTA56M
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BCP70M
Abstract: SCT595
Text: BCP70M PNP Silicon AF Power Transistor 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly
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BCP70M
VPW05980
SCT595
Jul-02-2001
BCP70M
SCT595
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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SCT595
Abstract: AEB02662 AEP02661 AES02663 SCT-595 4295G
Text: Low-Drop Voltage Regulator TLE 4295 Target Data Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption
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SCT-595
4295G
4295G
AES02663
SCT595
AEB02662
AEP02661
AES02663
SCT-595
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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BCP51M
Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
Text: BCP51M.BCP53M PNP Silicon AF Transistor 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs
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BCP51M.
BCP53M
BCP54M.
BCP56M
VPW05980
BCP51M
BCP52M
SCT595
BCP51M
BCP52M
BCP53M
BCP54M
SCT595
SCT-595
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SCT-595
Abstract: No abstract text available
Text: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package
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VPW05980
SCT-595
EHP00262
EHP00260
EHP00263
EHP00264
Oct-20-1999
SCT-595
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SCT-595
Abstract: 5456 sct595 50
Text: BCP 54M . BCP 56M NPN Silicon AF Transistors 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP 51M.BCP 53M PNP 2 1 VPW05980 Type Marking Pin Configuration Package BCP 54M
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VPW05980
SCT-595
EHP00269
EHP00267
EHP00270
EHP00271
Oct-20-1999
SCT-595
5456
sct595 50
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BCP51M
Abstract: BCP53M BCP54M BCP55M BCP56M SCT595 sct595 50
Text: BCP54M.BCP56M NPN Silicon AF Transistors 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP51M.BCP53M PNP 2 1 VPW05980 Type Marking Pin Configuration Package BCP54M BAs
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BCP54M.
BCP56M
BCP51M.
BCP53M
VPW05980
BCP54M
BCP55M
SCT595
BCP51M
BCP54M
BCP55M
BCP56M
SCT595
sct595 50
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SOT323 reflow
Abstract: All smd Packages sct-595 sot-23 dual infrared transistor CECC 00802 reflow profile 00802 SC-75 SCT-595 sod323 reflow
Text: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be
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SCT-595
HLG09053
SCT-598
HLG09183
HLG05516
HLG05520
MW-12
HLG05819
MW-16
HLG09056
SOT323 reflow
All smd Packages sct-595 sot-23
dual infrared transistor
CECC 00802
reflow profile 00802
SC-75
SCT-595
sod323 reflow
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All smd Packages sct-595 sot-23
Abstract: HLG05531 HLG05532 HLG09054 SCT-595
Text: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be placed
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HLG09183
HLG05516
HLG05818
HLG05520
MW-12
HLG05819
MW-16
HLG09056
All smd Packages sct-595 sot-23
HLG05531
HLG05532
HLG09054
SCT-595
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-RF-BIPOLAR-Transistors.
45-RF-BIPOLAR-Transistors.
OT-23
OT-143
S4 78a DIODE schottky
diode S6 78A
BC 148 TRANSISTOR DATASHEET
transistors BC 543
TRANSISTOR BC 158
BC 158 is npn or pnp
68W npn
TRANSISTOR BC
s6 78a
baw 92
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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O-92d
2907A PNP bipolar transistors
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 450 pnp
diode S6 78A
transistors bf 517
BFG sot89
BC 327 SOT 23
BAS20 SOT23
DIODE TA 70/04
bcp 846
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2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-143
2907A PNP bipolar transistors
diode S6 78A
MMIC SOT 363
s1140
DIODE TA 70/04
2907A PNP bipolar transistors datasheet
Diode BAW 62
TRANSISTOR BC 158
baw 92
68W SOT
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142001
Abstract: BFP490 SCT595 SCT-595
Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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BFP490
VPW05980
SCT595
200mA
Aug-14-2001
142001
BFP490
SCT595
SCT-595
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TA 490
Abstract: SCT-595 490 transistor 09326
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Dec-13-1999
TA 490
SCT-595
490 transistor
09326
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093.266
Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Nov-17-2000
093.266
09326
V201200
equivalent transistor K 3531
IC 7479
SPICE 2G6
490 transistor
BFP490
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ic 7912
Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,
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D-81541
BGB550
10max
ic 7912
7912
7912 ic datasheet
DATA SHEET OF IC 7912
Ic D 1708 ag
TRANSISTOR 7912
SCT595
TRANSISTOR C 557 B
transistor K 1352
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TLE4250G
Abstract: AEP02581
Text: SIEMENS L ow -D rop V o ltag e T racker TLE 4250 G T arg et Data Features • • • • • • • • • • • Output tracking tolerance < ± 0.5% Low drop voltage Wide operation range: up to 40 V Wide temperature range: - 40 °C < < 150 °C Output protected against short circuit
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OCR Scan
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PDF
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Q67006-A9351
SCT-595
TLE4250G
AEP02581
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B7AD
Abstract: j599 Y645 smd code 12.00 Jn AED02191 AED02192 AEP02253 AES02190 Q67006-A9304 SCT595
Text: SIEMENS • ÖE3St,0S OOc3b7ED 2 b 5 L o w -D rop V o ltage R egulator TLE 4286G P relim in ary Data Sheet 1 Overview 1.1 Features • • • • • • • Wide operation range: 6 V to 45 V Wide temperature range: - 40 °C to 150 °C Low quiescent current consumption: 50 |iA
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OCR Scan
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4286G
Q67006-A9304
4286G
out193
AED02194
8235b05
TLE4286G
SCT595
GPW05997
B7AD
j599
Y645
smd code 12.00 Jn
AED02191
AED02192
AEP02253
AES02190
SCT595
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Untitled
Abstract: No abstract text available
Text: SIEMENS BC P71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Q62702-C2597 LU II CO PCs O li BCP71M
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OCR Scan
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PDF
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BCP71M
SCT-595
Q62702-C2597
20Collector-base
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP70M PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Package o II in h CO Q62702-C2596 h PBs IXI BCP 70M Pin Configuration CO Ordering Code
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OCR Scan
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PDF
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BCP70M
Q62702-C2596
SCT-595
300ns;
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type
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OCR Scan
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Q62702-A3474
SCT-595
300ns;
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