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    SD1007 TRANSISTOR Search Results

    SD1007 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    SD1007

    Abstract: SD1007 transistor thomson microwave transistor
    Text: S —THOMSON SOLID STATE MICROWAVE SD1007 THOMSON-CSF COMPONENTS CORPORATION Montgomery vilje, PÀ 18936 • 215 362-8500 ■ JW X .510-661-7299 . . . CATV/MATV AMPLIFIER TRANSISTOR DESCRIPTION SSM device type SD 1007-1 is a silicon epitaxial NPN-planar transistor


    OCR Scan     		SD1007 SD1007-1 SD1007 SD1007 transistor thomson microwave transistor PDF