SD3443
Abstract: SD3443-001 SD3443-002 SD5443
Text: SD3443/5443 Silicon Phototransistor INFRA-57.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control
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SD3443/5443
INFRA-57
SE3450/5450,
SE3455/5455
SE3470/5470
SD3443/5443
SD3443
SD5443
can443
INFRA-21
SD3443-001
SD3443-002
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SD5433
Abstract: SD3443 SD5443 SE3450 SE5450 phototransistor 302
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Wide operating temperature range (- 55¡C to +125¡C) • External base connection for added control
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SD3443/5443
SE3450/5450,
SE3455/5455
SE3470/5470
INFRA-57
SD3443/5443
SD3443
SD5443
SE3450
SD3443
SD5433
SE5450
phototransistor 302
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SD5433
Abstract: all datasheet phototransistor SD3443 SE5450 SD5443 SE3450 sd5443 phototransistor
Text: 17 September 1997 SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Wide operating temperature range (-55¡C to +125¡C) • External base connection for added control
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SD3443/5443
SE3450/5450,
SE3455/5455
SE3470/5470
INFRA-57
SD3443/5443
SD3443
SD5443
SE5450
SD5443
SD5433
all datasheet phototransistor
SE3450
sd5443 phototransistor
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sd5443 phototransistor
Abstract: SE5450 SD3443 SD5443 SE3450
Text: SD3443/5443 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_03b.cdr Fig. 1 Responsivity vs Angular Displacement SD3443 Fig. 2 gra_052.ds4 Relative response 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative response cir_004.cdr
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SD3443/5443
SD3443)
SD5443)
SE3450
SD3443
SE5450
SD5443
sd5443 phototransistor
SD3443
SD5443
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SV5637-001
Abstract: No abstract text available
Text: SV5637-001 Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2¡ nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Mechanically and spectrally matched to SD5421
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SV5637-001
SD5421
SD5443
INFRA-87
SV5637-001
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SV5637-001
Abstract: lens photodiode phototransistor INFRA-87 VCSEL phototransistor sd5443 phototransistor 850 nm LED honeywell sensor VCSEL photodiode SD5421 SD5443
Text: 17 September 1997 SV5637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2¡ nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance
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SV5637-001
SD5421
SD5443
INFRA-87
SV5637-001
lens photodiode phototransistor
VCSEL phototransistor
sd5443 phototransistor
850 nm LED
honeywell sensor
VCSEL photodiode
SD5421
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SE5455-003
Abstract: SE3455-003 SD5600 SE3455 SE3455-001 SE5455 SE5455-001 INFRA-21 SE5455-004 SE5455-002
Text: SE3455/5455 GaAs Infrared Emitting Diode INFRA-83.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C)
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SE3455/5455
INFRA-83
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
SE3455/5455
SE3455
SE5455
SD5443
SE5455-003
SE3455-003
SE3455-001
SE5455-001
INFRA-21
SE5455-004
SE5455-002
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SE3470-001
Abstract: SD5600 SE3470 SE3470-002 SE5470 SE5470-001 SE5470-003 TO46 lens phototransistor
Text: SE3470/5470 FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range
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SE3470/5470
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
INFRA-83
SE3470/5470
INFRA-22
INFRA-11
SE5470
SE3470-001
SE3470
SE3470-002
SE5470-001
SE5470-003
TO46 lens phototransistor
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SD5443-002
Abstract: No abstract text available
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control
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OCR Scan
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PDF
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SD3443/5443
SE3450/5450,
SE3455/5455
SE3470/5470
SD3443/5443
SD3443
SD5443
SE3450
SD3443
SD5443-002
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Untitled
Abstract: No abstract text available
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package » Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control
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SD3443/5443
SE3450/5450,
SE3455/5455
SE3470/5470
SD3443/5443
SD3443
SD5443
SE3450
SD3443
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SD-3443-1
Abstract: sd5443 phototransistor
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 16° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control
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SD3443/5443
SE3450/5450,
SE3455/5455
SE3470/5470
SD3443/5443
SD3443
SD5443
SE3450
SD3443
SD-3443-1
sd5443 phototransistor
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SD5443-003
Abstract: SD3443 SD-3443-1
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C 1o+125°C) • External base connection for added control
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SD3443/5443
SE3450/5450,
SE3455/5455
SE3470/5470
SD3443/5443
SD3443
SD5443
SE3450
SD3443
SD5443-003
SD-3443-1
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SD 5455
Abstract: SD-5443-4 SD-5443-3 sd-3443-3 SD5443-4 SD5443-3 SD-3443-2 spectronics SD.5443-3 SD-5443-2
Text: SILICON PHOTOTRANSISTORS FEATURES Spectrally and mechanically matched to SE-3455 and SE-5455 IR emitters Compatible with DDL/TTL circuitry SD-3443: Flat window can SD-5443: Lens can APPLICATIONS Tape Readers Card Readers Encoders Character Recognition Data Transmission
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SE-3455
SE-5455
SD-3443:
SD-5443:
SD-5443)
SD-3443)
SD-5443
SD-3443
SD 5455
SD-5443-4
SD-5443-3
sd-3443-3
SD5443-4
SD5443-3
SD-3443-2
spectronics
SD.5443-3
SD-5443-2
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n11a
Abstract: 101S UHP4
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control
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SD3443/5443
SCM4S-001
lo-100
8W443
755--B
B/B32
SU/S321
n11a
101S
UHP4
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Untitled
Abstract: No abstract text available
Text: SV5637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2° nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Mechanically and spectrally matched to SD5421
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OCR Scan
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PDF
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SV5637-001
SD5421
SD5443
SV5637-001
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Untitled
Abstract: No abstract text available
Text: SV5637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2° nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Mechanically and spectrally matched to SD5421
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OCR Scan
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PDF
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SV5637-001
SD5421
SD5443
SV5637-001
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Untitled
Abstract: No abstract text available
Text: SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications
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SE3455/5455
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
INFRA-63
SE3455/5455
SE3455
SE5455
GD22472
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SE5470-1
Abstract: 5443 equivalent SE3470-001
Text: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range
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SE3470/5470
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
SE3470/5470
SE3470
SE5470
SE5470-1
5443 equivalent
SE3470-001
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Untitled
Abstract: No abstract text available
Text: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 935 nm wavelength . Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to
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SE3450/5450
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
SE3450/5450
SE3450
SE5450
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SD 5455
Abstract: SE3455-004 SE3455-003 SE5455-004 SE5455
Text: SE3455/5455 GaAs Infrared Emitting Diode FEA TU R ES • TO -46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications
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PDF
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SE3455/5455
SD3421/5421
SE3455/5455
SE3455
SE5455
SD3443
SD5443
SD 5455
SE3455-004
SE3455-003
SE5455-004
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SE5470
Abstract: SE5470-003
Text: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package I • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents
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OCR Scan
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PDF
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SE3470/5470
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
SE3470/5470
SE3470
SE5470
SD5443
SE5470-003
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Untitled
Abstract: No abstract text available
Text: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to
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SE3450/5450
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
SE3450/5450
SE3450
SE5450
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Untitled
Abstract: No abstract text available
Text: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range
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OCR Scan
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PDF
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SE3470/5470
SD3421/5421
SD3443/5443/5491
SD3410/5410
SD5600
SE3470/5470
SE3470
SE5470
SD5443
MSS1830
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diameter glass lens phototransistor
Abstract: No abstract text available
Text: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents
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SE3470/5470
125aC)
SD3421/5421
SD3443/5443/5491
SD3410/54
SD5600
SE3470/5470
SE3470
SE5470
SDP8406
diameter glass lens phototransistor
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