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    SDRAM 128M SAMSUNG Search Results

    SDRAM 128M SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877DBVG Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DBVG8 Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877ANLG8 Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    SDRAM 128M SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tc45 datasheet

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D28163HD 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM Revision 1.0 December 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.0 Dec. 2001 128M DDR SDRAM


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    PDF K4D28163HD 128Mbit 16Bit K4D28163HD-TC45/55 K4D28163HD-TC33/36 66pin 65TYP 20MAX tc45 datasheet

    K4D261638E-TC36

    Abstract: K4D261638E-TC50 K4D261638 K4D261638E K4D261638E-TC33 K4D261638E-TC40
    Text: 128M DDR SDRAM K4D261638E 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 1.1 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.1 Jan. 2003 128M DDR SDRAM


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    PDF K4D261638E 128Mbit 16Bit K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA 310mA K4D261638E-TC50 K4D261638 K4D261638E K4D261638E-TC40

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.4 February 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.4 Feb. 2005 128M GDDR SDRAM


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    PDF K4D261638F 128Mbit 16Bit -TC25 K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK K4D261638F-TC2A/33/36

    K4D261638F-TC40

    Abstract: K4D261638F K4D261638F-TC25 K4D261638F-TC2A K4D261638F-TC33 K4D261638F-TC36 K4D261638F-TC50 tras 36ns
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.2 Jan. 2004 128M GDDR SDRAM


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    PDF K4D261638F 128Mbit 16Bit K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK K4D261638F-TC2A/33/36 15tCK K4D261638F-TC40 K4D261638F K4D261638F-TC2A K4D261638F-TC33 K4D261638F-TC36 K4D261638F-TC50 tras 36ns

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005 128M GDDR SDRAM


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    PDF K4D261638F 128Mbit 16Bit -TC25 K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK

    K4D28163HD-TC50

    Abstract: K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D28163HD-TC60
    Text: 128M DDR SDRAM K4D28163HD 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 1.4 August 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.4 Aug. 2002 128M DDR SDRAM


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    PDF K4D28163HD 128Mbit 16Bit K4D28163HD-TC36/40 4K/64ms 4K/32ms. K4D28163HD-TC36 275MHz) K4D28163HD-TC50 K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D28163HD-TC60

    K4D261638E-TC36

    Abstract: K4D261638E-TC50 K4D261638E K4D261638E-TC2A K4D261638E-TC33 K4D261638E-TC40
    Text: 128M DDR SDRAM K4D261638E 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 1.2 July 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.2 Jul. 2003 128M DDR SDRAM K4D261638E


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    PDF K4D261638E 128Mbit 16Bit K4D261638E-TC2A K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA K4D261638E-TC50 K4D261638E K4D261638E-TC40

    K4D263238D

    Abstract: K4D263238D-QC40 K4D263238D-QC50
    Text: 128M DDR SDRAM K4D263238D 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.3 July 2002 - 1 - Rev. 1.3 Jul. 2002 128M DDR SDRAM K4D263238D Revision History Revision 1.3 (July 18, 2002)


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    PDF K4D263238D 128Mbit 32Bit K4D263238D-QC55 183/166MHz K4D263238D-QC50. K4D263238D-QC45/60 K4D263238D K4D263238D-QC40 K4D263238D-QC50

    K4D263238F-UC

    Abstract: K4D263238F-QC50 K4D263238F K4D263238F-QC40
    Text: 128M DDR SDRAM K4D263238F 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 May 2003 - 1 - Rev 1.1 May 2003 128M DDR SDRAM K4D263238F Revision History Revision 1.1 (May 30, 2003)


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    PDF K4D263238F 128Mbit 32Bit K4D263238F-UC K4D263238F-QC50 K4D263238F K4D263238F-QC40

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238F 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.0 April 2003 - 1 - Rev 1.0 Jan 2003 128M DDR SDRAM K4D263238F Revision History Revision 1.0 (April 29, 2003)


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    PDF K4D263238F 128Mbit 32Bit

    Untitled

    Abstract: No abstract text available
    Text: Target spec 128M DDR SDRAM K4D263238F 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 0.0 January 2003 - 1 - Rev. 0.0 Jan. 2003 Target spec 128M DDR SDRAM K4D263238F Revision History


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    PDF K4D263238F 128Mbit 32Bit

    ddr dimm pinout

    Abstract: circuit diagram of ddr ram DDR200 PC2100 DDR dimm DDR DIMM 184 pinout
    Text: 128M X 72 REGISTERED DDR DIMM DDR SDRAM FEMMA MODULE 1 Giga Byte 128M x 72 DDR SDRAM Low Profile Registered 184 Pin DIMM Preliminary General Description: This memory module is a high performance 1024 Megabyte Registered synchronous dynamic RAM module organized as 128M x 72 in a 184-pin Dual In-Line Memory Module (DIMM)


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    PDF 184-pin ddr dimm pinout circuit diagram of ddr ram DDR200 PC2100 DDR dimm DDR DIMM 184 pinout

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B2863F-K9S/F8S/E7S REV: 1.0 General Information 1GB 128M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B2863F is a 128M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of nine CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA


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    PDF VL33B2863F-K9S/F8S/E7S 240-PIN VL33B2863F 28-bit 240-pin, VN-110909

    Kentron Technologies

    Abstract: ddr dimm pinout DDR DIMM pinout micron 184 A 2630 ELPIDA PC2700 DDR266 PC2100 PC2700 DDR DIMM pinout micron DDR DIMM 184 pinout
    Text: 128M / 256M X 72 REGISTERED DDR DIMM DDR SDRAM FEMMA MODULE 1024 Mega Byte 128M x 72 DDR SDRAM Low Profile 2048 Mega Byte (256M x 72) Registered 184 Pin DIMM Preliminary General Description: This memory module is a high performance 1024 / 2048 Megabyte Registered synchronous


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    PDF /256M 184-pin Kentron Technologies ddr dimm pinout DDR DIMM pinout micron 184 A 2630 ELPIDA PC2700 DDR266 PC2100 PC2700 DDR DIMM pinout micron DDR DIMM 184 pinout

    k4n26323ae

    Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
    Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003


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    PDF K4N26323AE-GC 128Mbit 32Bit k4n26323ae K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


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    PDF KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


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    PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR-II SDRAM K4N26323AE-GC 128Mbit GDDR-II SDRAM 1M x 32Bit x 4 Banks GDDR-II SDRAM with Differential Data Strobe and DLL Revision 1.5 December 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.5 Dec. 2002


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    PDF K4N26323AE-GC 128Mbit 32Bit

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: 1.1 VL470T5664A-E6S/D5S/CCS General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description: The VL470T5664A is a 256M X 64 DDR2 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 128M X 8 bit 2 x 128Mx8 configured to 128M x16 with 8 banks DDR2 Synchronous DRAMs in


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    PDF VL470T5664A-E6S/D5S/CCS 256Mx64 200-PIN VL470T5664A 128Mx8 200-pin PC2-5300 PC2-4200 PC2-3200

    K4D263238K-UC50

    Abstract: K4D263238K
    Text: 128M GDDR SDRAM K4D263238K 128Mbit GDDR SDRAM Revision 1.1 July 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4D263238K 128Mbit K4D263238K-UC50 K4D263238K

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: 1.1 VL470T5664A-E6S/D5S/CCS-I General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description: The VL470T5664A is a 256M X 64 DDR2 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 128M X 8 bit 2 x 128Mx8 configured to 128M x16 with 8 banks DDR2 Synchronous DRAMs in


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    PDF VL470T5664A-E6S/D5S/CCS-I 256Mx64 200-PIN VL470T5664A 128Mx8 200-pin

    DDR2-400

    Abstract: DDR2-533 DDR2-667 PC2-3200 PC2-5300 DDR2 SODIMM SPD JEDEC SPEC
    Text: Product Specifications PART NO: REV: 1.1 VL470T5664A-E6S/D5S/CCS General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description: The VL470T5664A is a 256M X 64 DDR2 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 128M X 8 bit 2 x 128Mx8 configured to 128M x16 with 8 banks DDR2 Synchronous DRAMs in


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    PDF VL470T5664A-E6S/D5S/CCS 256Mx64 200-PIN VL470T5664A 128Mx8 200-pin PC2-5300 PC2-4200 PC2-3200 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 DDR2 SODIMM SPD JEDEC SPEC

    samsung GDDR5

    Abstract: K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50
    Text: 128M GDDR SDRAM K4D263238K 128Mbit GDDR SDRAM Revision 1.1 July 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4D263238K 128Mbit 875ns 06Gbps) samsung GDDR5 K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM377S2857AT2 SDRAM MODULE KMM377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S2857AT2 is a 128M bit x 72 Syn­


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    PDF KMM377S2857AT2 KMM377S2857AT2 128Mx72 128Mx4, KMM377S2857AT2-GH 100MHz 128Mx4 KMM377S2857AT2-GL