Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM3742-4SL
TIM3742-4UL
95GHz
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1314-9L
75GHz
-25dBc
33dBm
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C
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TIM8596-2
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tim8996-30
Abstract: 7-AA03A
Text: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM8996-30
7-AA03A)
tim8996-30
7-AA03A
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM5359-4UL
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TIM0910-20
Abstract: No abstract text available
Text: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC
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TIM0910-20
2-11C1B)
TIM0910-20
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package
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TIM7179-4
MW50970196
TIM7179-4
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T41G
Abstract: No abstract text available
Text: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed
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10172S2
T-41-G7
55/im
10/125/tm)
T-41-50
1000o
50/125pm)
T41G
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package
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TIM1414-4
MW50280196
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2N335
Abstract: No abstract text available
Text: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly
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2N335
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2N117
Abstract: 2n117 texas
Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.
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2N117
2n117 texas
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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TPM1818-30
2-16G1B)
MW40020196
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2n243
Abstract: 2N244 transistor all
Text: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.
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2N243,
2N244
2n243
transistor all
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Untitled
Abstract: No abstract text available
Text: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE
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TIM3742-8SL
2-11D1B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
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TIM1415-2
MW50390196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package
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TIM7785-16
TIM7785-16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package
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TIM1011-5
MW50110196
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Y14SM
Abstract: No abstract text available
Text: 5 P £ C lF iC V .T iO N 5 : MATERIALS: CASE: HIGH TEMPERATURE POLYESTER. ACTUATOR BUTTON: POLYAMIDE. COLOR: SEE CHART BELOW. MOVING CONTACT: CCPPER ALLOY, GOLD PLATE. FIXED CONTACT/TERMINAL: CCPPER ALLOY. TIM/LEAO PLATC. TERMINAL SEAL: EPOXY. r~ —'——
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package
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TIM1112-4
MW50190196
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50920-1
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package
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TIM6472-16
TIM6472-16
50920-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package
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TIM4450-16
UnW50530196
MW50530196
TPM4450-16
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Untitled
Abstract: No abstract text available
Text: OSHÏBA LA S E R /FB R O P TIC Gl D • T7 2SE D ü lbD ññ S «TO SL - T -4 T -Q 7 TOSHIBA LASER DIODE TOLD 360 Features • • • • • Wavelength 1.55/im Coaxial Package (Hermetically Sealed) Suitable for High Bit Rate Modulation Single-mode Fiber Pigtail
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55/im
1000o
50/125pm)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package
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TIM5359-16
TIM5359-16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package
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TIM0910-10
2-11C1B)
MW50050196
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