3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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PDF
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W986416EH
Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/
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W78C32C
Q4/04
IS25C64A-2
IS25C64A-3
16Kx8
IS25C128-2
W986416EH
W9864G2EH
W981216DH
verilog DTMF decoder
ISD1600
W9825G6CH
W9812G6DH
w981616ch
SIS 730S
isd1620
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PDF
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HY514264
Abstract: HY514264B DSA0015545 256Kx16 lcas
Text: HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514264B
256Kx16,
16-bit
16-bits
256Kx16
HY514264
HY514264B
DSA0015545
256Kx16 lcas
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PDF
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1Mx4 EDO RAM
Abstract: 1Mx4 EDO DRAM HY514404A schematic diagram UPS
Text: HY514404A 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514404A
1Mx4 EDO RAM
1Mx4 EDO DRAM
HY514404A
schematic diagram UPS
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PDF
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1Mx4 EDO RAM
Abstract: 1Mx4 HY514404B
Text: HY514404B 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514404B
1Mx4 EDO RAM
1Mx4
HY514404B
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HY514404A
Abstract: 1Mx4 EDO RAM
Text: HY514404A 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514404A
HY514404A
1Mx4 EDO RAM
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PDF
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HY514404B
Abstract: No abstract text available
Text: HY514404B 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514404B
128ms
10/Jan
HY514404B
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PDF
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VT82C693
Abstract: VT82C596A apollo proplus snoop ahead timing diagram cpu and bios VIA Apollo Master slot1 370CPU
Text: ZFRQQHFW H 97& $SROOR3UR3OXV 0+] 6LQJOH&KLS6ORW6RFNHW1RUWK%ULGJH IRU'HVNWRSDQG0RELOH3&6\VWHPV ZLWK$*3DQG3&, SOXV$GYDQFHG &&0HPRU\&RQWUROOHU VXSSRUWLQJ6'5$0('2DQG 3* 3UHOLPLQDU\5HYLVLRQ 'HFHPEHU 9,$7(&+12/2*,(6,1&
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VT82C596A
VT82C693
apollo proplus
snoop ahead
timing diagram cpu and bios
VIA Apollo Master
slot1
370CPU
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PDF
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hy512264
Abstract: HY512264JC HY512264TC
Text: HY512264 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and
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HY512264
128Kx16,
16-bit
16-bits
128Kx16
hy512264
HY512264JC
HY512264TC
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PDF
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ali m1487 B1
Abstract: m6117c a1 ali m6117c a1 cpu M6117C ali m6117c m1487 b1 ALI chipset M1487 ALI 1487 RTL8029AS SBC-456
Text: Table of Contents 7 11 6 8 12 9 13 10 14 15 siz e bC om pa ct SB Cs s PC ia LP Su X- ed 29 26 23 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
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msm5232
Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
Text: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites
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99J595RB
msm5232
d2b bus
MSM5230
MSM6920
MSM7731-02
2016 RAM
MSM66P589
MSM6411
18QFJ
3ch-10bit
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PDF
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EV-48004A
Abstract: gt-64011-p GT-32011 GT-64111 DLink ADSL GT-64010A GT-64120 R4640 GT48006A GT-48006-P
Text: *$/,/ 2 7(&+12/2*< *$ / , / (2 7(&+ 1 2 /2 * < 6+257 250 &$7$/2* 6SULQJ 6<67(0 &21752//(56 IRU 5,6& 352&(66256 6:,7&+(' (7+(51(7 &21752//(56 5(027( $&&(66 &21752//(56 Notices Copyright 1998 Galileo Technology, Inc. All Rights Reserved. GalNet , GalaxyTM, Galileo Technology, Galileo and the Galileo logo are
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S-163
EV-48004A
gt-64011-p
GT-32011
GT-64111
DLink ADSL
GT-64010A
GT-64120
R4640
GT48006A
GT-48006-P
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PDF
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Untitled
Abstract: No abstract text available
Text: IS41C16100S IS41LV16100S 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE FEATURES DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval:
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IS41C16100S
IS41LV16100S
16-MBIT)
IS41C16100S
IS41LV16100S
128ms
IS41C16100S)
IS41LV16100S)
16-bit
400mil
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PDF
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CL-GD54M40
Abstract: EDO FLASH DIMMs 72 pin 16mb 440LX 82440LX 82443LX J101 J200 intel DOC hex led display pentium II PROCESSOR BLACK DIAGRAM
Text: Enterprise Server Group Intel M440LX DP Server Board Set Technical Product Specification Released version 1.0 Order Number: 282994-001 August, 1997 The M440LX DP Server board set may contain design defects or errors known as errata. Characterized errata that may cause the M440LX DP Server board set's behavior to deviate from published specifications are documented in the M440LX DP Server Specification Update.
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M440LX
CL-GD54M40
EDO FLASH DIMMs 72 pin 16mb
440LX
82440LX
82443LX
J101
J200
intel DOC
hex led display
pentium II PROCESSOR BLACK DIAGRAM
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IC41C16100S
Abstract: IC41LV16100S IC41C16100S-45T 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE IC41C16100S-50KI
Text: IC41C16100S IC41LV16100S Document Title 1M x 16 bits Dynamic RAM with EDO Page Mode Revision History Revision No History Draft Date 0A 0B 0C 0D Initial Draft Revise for typographic Add Pb-free package Change tCOH from 5ns to 4ns June 5,2001 November 9,2001
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IC41C16100S
IC41LV16100S
DR010-0D
16-MBIT)
IC41LV16100S-45KI
IC41LV16100S-45TI
IC41LV16100S-50KI
IC41LV16100S-50TI
IC41C16100S
IC41LV16100S
IC41C16100S-45T
1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
IC41C16100S-50KI
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HY514264
Abstract: No abstract text available
Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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OCR Scan
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HY514264B
256Kx16,
16-bit
40-pin
400mil)
16-bits
256Kx16
HY514264
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PDF
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HY512264
Abstract: HY512264jc
Text: “H YU N D A I H Y 5 1 2 2 6 4 S e r ie s 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The HY512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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128Kx
16-bit
HY512264
400mil
40pin
40/44pin
75DfiÃ
1AB10-00-MA
HY512264jc
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY514264B Seies 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
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OCR Scan
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HY514264B
16-bit
400mil
40pin
40/44pin
0DD42fl6
1AC29-10-MAY95
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PDF
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Untitled
Abstract: No abstract text available
Text: ««YUHPJII « HYS14404A 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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OCR Scan
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HYS14404A
128ms
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PDF
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BT 2313 M
Abstract: Bt 2313 HY514264B HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt
Text: HY514264B Seies HYUNDAI 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
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OCR Scan
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HY514264B
16-bit
HV514264B
400mil
40pin
40/44pin
1AC29-10-MA
BT 2313 M
Bt 2313
HY514264
BSH15
hy514264bjc50
icshtibi
BVOE 18
DCS15
npjt
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PDF
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HY512264
Abstract: HY512264JC HY512264TC HY512264 tc
Text: »HYUNDAI HY512264 Series 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The H Y 512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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HY512264
128Kx
16-bit
400mil
40pin
40/44pin
033jC
1AB10-00-MAY95
HY512264JC
HY512264TC
HY512264 tc
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PDF
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sf hd65
Abstract: be4b m003 v6 sf hd60 hd65 CH341 1250H BE5B M030 M046
Text: INTEL 430HX PCISET 82439HX SYSTEM CONTROLLER TXC • Supports All 3V Pentium Processors ■ Dual Processor Support ■ PCI 2.1 Compliant ■ Integrated Second-Level Cache Controller — — — — — — — — — ■ ■ — — Direct M apped Organization
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OCR Scan
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430HX
82439HX
512-MB
64-Mb
sf hd65
be4b
m003 v6
sf hd60
hd65
CH341
1250H
BE5B
M030
M046
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PDF
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hy5142648
Abstract: HY514264
Text: « « Y I IH D f tl -• HY514264B 2S6Kx1S, Extend«! Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60
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OCR Scan
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HY514264B
16-bit
16-bits
hy5142648
HY514264
|
PDF
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82439HX
Abstract: CH365 CH135 MLT 22 805 CH341
Text: INTEL 430HX PCISET 82439HX SYSTEM CONTROLLER TXC • Supports All 3V Pentium Processors ■ Dual Processor Support ■ PCI 2.1 Com pliant ■ Integrated Second-Level Cache Controller — — — — — — — — — ■ ■ — — Direct Mapped Organization
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OCR Scan
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430HX
82439HX
512-MB
64-Mb
CH365
CH135
MLT 22 805
CH341
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PDF
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