SSP4N80AS
Abstract: No abstract text available
Text: SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
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SSP4N80AS
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SSP4N80AS
Abstract: No abstract text available
Text: SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
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SSP4N80AS
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SSP4N80AS
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SSP4N80A
Abstract: No abstract text available
Text: SSP4N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 4.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
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SSP4N80A
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SSP4N80A
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Untitled
Abstract: No abstract text available
Text: SSP4N80AS Advanced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology dss = ^D S o n = ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 ^lA (Max.) @ VDS = 800V
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SSP4N80AS
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Untitled
Abstract: No abstract text available
Text: SSP4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■
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SSP4N80AS
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Untitled
Abstract: No abstract text available
Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES B V DSS - 800 V 4.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V
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SSP4N80A
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Untitled
Abstract: No abstract text available
Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V
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SSP4N80A
7Tb4145
004G3Ã
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
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SSP4N80AS
Abstract: No abstract text available
Text: Advanced SSP4N80AS Power MOSFET FEATURES • BV 800 V ^D S o n = 3.0 Q. lD = 4.5 A A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea
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SSP4N80AS
SSP4N80AS
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SSP4N80A
Abstract: sec ssp4n80a
Text: Advanced SSP4N80A Power MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T ech n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 4 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea
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SSP4N80A
T0-220
SSP4N80A
sec ssp4n80a
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