sem 2005
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high
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MRF6522â
MRF6522-60
sem 2005
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF184/D
MRF184R1
MRF184SR1
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SEM 2005 16 PINS
Abstract: No abstract text available
Text: µA78M00 SERIES POSITIVE-VOLTAGE REGULATORS www.ti.com SLVS059P – JUNE 1976 – REVISED OCTOBER 2005 FEATURES 3-Terminal Regulators Output Current up to 500 mA No External Components Internal Thermal-Overload Protection COMMON KC TO-220 PACKAGE (TOP VIEW)
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A78M00
SLVS059P
O-220)
PowerFLEXE/TO-252*
O-252,
OT-223)
SEM 2005 16 PINS
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SEM 2005 16 PINS
Abstract: sem 2005 sem 2001 SLVS059P UA78M05CKTPR
Text: µA78M00 SERIES POSITIVE-VOLTAGE REGULATORS www.ti.com SLVS059P – JUNE 1976 – REVISED OCTOBER 2005 FEATURES 3-Terminal Regulators Output Current up to 500 mA No External Components Internal Thermal-Overload Protection COMMON KC TO-220 PACKAGE (TOP VIEW)
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A78M00
SLVS059P
O-220)
PowerFLEXE/TO-252*
O-252,
OT-223)
SEM 2005 16 PINS
sem 2005
sem 2001
SLVS059P
UA78M05CKTPR
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Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183R1 MRF183LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183/D
MRF183R1
MRF183LSR1
MRF183R1
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SEM 2005 16 PINS
Abstract: No abstract text available
Text: µA78M00 SERIES POSITIVE-VOLTAGE REGULATORS www.ti.com SLVS059P – JUNE 1976 – REVISED OCTOBER 2005 FEATURES 3-Terminal Regulators Output Current up to 500 mA No External Components Internal Thermal-Overload Protection COMMON KC TO-220 PACKAGE (TOP VIEW)
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A78M00
SLVS059P
O-220)
PowerFLEXE/TO-252*
O-252,
OT-223)
SEM 2005 16 PINS
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF187 MRF187R3 MRF187SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF187/D
MRF187
MRF187R3
MRF187SR3
MRF187
MRF187R3
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TRANSISTOR A107
Abstract: transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET
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MRF6522â
MRF6522-5R1
TRANSISTOR A107
transistor A143
Transistor A119
TRANSISTOR A117
A124 transistor
transistor a124
A124
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device
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MRF182/D
MRF182R1
MRF182SR1
MRF182R1
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
28rola,
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SEM 2005 16 PINS
Abstract: No abstract text available
Text: TLV2217 LOWĆDROPOUT FIXEDĆVOLTAGE REGULATORS ą SLVS067L − MARCH 1992 − REVISED APRIL 2005 D Fixed 1.8-V, 2.5-V, and 3.3-V Outputs D ±1% Maximum Output Voltage Tolerance at TJ = 25°C D 500-mV Maximum Dropout Voltage at 500 mA 3.3-V Option D ±2% Output Voltage Variation Across Load
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TLV2217
SLVS067L
500-mV
PowerFLEXE/TO-252*
O-252,
SEM 2005 16 PINS
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Untitled
Abstract: No abstract text available
Text: µA79M00 SERIES NEGATIVEĆVOLTAGE REGULATORS SLVS060K − JUNE 1976 − REVISED APRIL 2005 D 3-Terminal Regulators D Output Current Up To 500 mA D No External Components D High Power-Dissipation Capability D Internal Short-Circuit Current Limiting D Output Transistor Safe-Area Compensation
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A79M00
SLVS060K
A79M05
O-220)
A79M05,
A79M08
A78M00
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the
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MRF6522â
MRF6522-10R1
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eldec Crane
Abstract: CRANE POWER SUPPLY HIGH VOLTAGE sem 2005 16 pin eldec cy06-02
Text: DC/DC CONVERTERS 28 VOLT INPUT FEATURES • • • • • • • • • • • –55° to +125°C operation 16 to 40 VDC input Fully isolated Magnetic feedback Fixed frequency 600 kHz typical Topology – Single Ended Forward 50 V for up to 50 ms transient protection
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CY7C1342
Abstract: CY7C135
Text: CY7C135 CY7C1342 4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 4K x 8 organization • 0.65-micron CMOS for optimum speed/power
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CY7C135
CY7C1342
65-micron
7C1342
52-pin
CY7C135
CY7C1342
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SEM 2005 16 PINS
Abstract: pin diagram of sem 2005 CY7C138 CY7C139 sem 2005 16 pin 25j81
Text: CY7C138 CY7C1394K x 8/9 Dual-Port Static RAM with Sem, Int, Busy CY7C138 CY7C139 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells that allow simultaneous reads of the same memory location • 4K x 8 organization CY7C138
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CY7C138
CY7C1394K
CY7C138
CY7C139
CY7C138)
CY7C139)
65-micron
CY7C138/CY7C139
SEM 2005 16 PINS
pin diagram of sem 2005
CY7C139
sem 2005 16 pin
25j81
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SEM 2005 16 PINS
Abstract: sem 2005 CYPRESS CROSS REFERENCE dual port sram sem 2005 16 pin CY7C006A CY7C007A CY7C016A CY7C017A TPD16-3
Text: CY7C006A CY7C007A CY7C017A32K/16K x 8, 32K x 9 Dual-Port Static RAM CY7C006A/CY7C007A CY7C016A/CY7C017A 32K/16K x8, 32K/16K x9 Dual-Port Static RAM Features • Automatic power-down • True dual-ported memory cells which allow simultaneous access of the same memory location
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CY7C006A
CY7C007A
CY7C017A32K/16K
CY7C006A/CY7C007A
CY7C016A/CY7C017A
32K/16K
CY7C006A)
CY7C007A)
CY7C016A)
SEM 2005 16 PINS
sem 2005
CYPRESS CROSS REFERENCE dual port sram
sem 2005 16 pin
CY7C006A
CY7C007A
CY7C016A
CY7C017A
TPD16-3
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SEM 2005 16 PINS
Abstract: sem 2005 CY7C138 CY7C139
Text: CY7C138 CY7C1394K x 8/9 Dual-Port Static RAM with Sem, Int, Busy CY7C138 CY7C139 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells that allow simultaneous reads of the same memory location • 4K x 8 organization CY7C138
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CY7C138
CY7C1394K
CY7C138
CY7C139
CY7C138)
CY7C139)
65-micron
CY7C138/CY7C139
SEM 2005 16 PINS
sem 2005
CY7C139
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IPACK2005
Abstract: Odonnell crack flip chip 519T2 50-pin d-sub computer science engineering board ed16 smd sensor nodes mttf
Text: Proceedings of IPACK2005 ASME InterPACK '05 Proceedings of IPACK2005 July 17-22, San Francisco, California, ASME InterPACK '05USA July 17-22, San Francisco, California, USA IPACK2005-73417 IPACK2005-73417 Lead-Free and PbSn Bump Electromigration Testing Stephen Gee and Nikhil Kelkar
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IPACK2005
IPACK2005-73417
IPACK2005
Odonnell
crack flip chip
519T2
50-pin d-sub
computer science engineering board
ed16 smd
sensor nodes mttf
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SEM 2005 16 PINS
Abstract: sem 2005 sem 2005 16 pin 9l reset A12L A13L CY7C026A CY7C036A pin diagram of sem 2005
Text: CY7C026A CY7C036A16K x 16/18 Dual-Port Static RAM CY7C026A CY7C036A 16K x 16/18 Dual-Port Static RAM Features • Expandable data bus to 32/36 bits or more using Master/Slave chip select when using more than one device • True dual-ported memory cells that allow simultaneous
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CY7C026A
CY7C036A16K
CY7C036A
CY7C026A)
CY7C036A)
35-micron
CY7C026A/CY7C036A
SEM 2005 16 PINS
sem 2005
sem 2005 16 pin
9l reset
A12L
A13L
CY7C026A
CY7C036A
pin diagram of sem 2005
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sem 2005 16 pin
Abstract: IC SEM 2004
Text: 10 r- _n - +0.30 • I.DD 0 .8 r ! if] > “ 7.0 +0.25 5.80 -0.15 ) ÒÒ + I o m 2.50± 0.10 2.45 (0 9) A m X □ I_ m o pv PIN 1n (1.5) m CN 1- a Nlrn SECTION A-A SECTION A-A 0 .6 4 $ ^ (0.9) . _ l 2 PIN A S S E M B L Y NOTE: VOID PIN NO. IS MARKED IN THE TABLE.
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PK-48152-001.
PS-48152-001.
TS-48152-001
SD-48152-001
sem 2005 16 pin
IC SEM 2004
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smoke DETECTOR CIRCUIT DIAGRAM pcb layout
Abstract: IC SEM 2005 SEM 2005 16 PINS MC146010 MC146010EG Applied sensors
Text: Freescale Semiconductor Technical Data D o cu m en t N um ber: M C 1 4 6 0 1 0 R e v 0, 09/2005 Low Power CMOS Photoelectric Smoke Detector IC The MC146010 is an advanced smoke detector component containing sophisticated very-low power analog and digital circuitry. The IC, when used with
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MC146010
smoke DETECTOR CIRCUIT DIAGRAM pcb layout
IC SEM 2005
SEM 2005 16 PINS
MC146010EG
Applied sensors
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Untitled
Abstract: No abstract text available
Text: JtiW 8 6 1982 512 K X 8 SRAM molate MS8512FK-25/30/35 Issue 1.0 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r , Inc. 524,288 x 8 CMOS High Speed Static RAM Features Pin Definition A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 . DO D1 D2 GND Very Fast Access Times of 25/30/35 ns
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MS8512FK-25/30/35
A0-A18
512Kx8
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