DIODE 19 9
Abstract: No abstract text available
Text: SK 30 DGDL 066 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper -03 ! ! !AB -"03 2 >9; 1 2 >9 @+ ;1 : 2 *@9 ; 2 >9 @+ ;1 : 2 *9+ ; !AB 2 > !1 2 * : SEMITOP 3
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Abstract: No abstract text available
Text: SK 30 DGDL 066 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper ,03 ! ! !<= ,"03 1 .*2 / 1 .* 75 2/ 8 1 9*5 2 1 .* 75 2/ 8 1 97* 2 !<= 1 . !/ 1 9 8 SEMITOP 3
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Abstract: No abstract text available
Text: SK 115 MB 10 Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2 .
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115MB10
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Abstract: No abstract text available
Text: SK 115 MB 10 Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2 .
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115MB10
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Untitled
Abstract: No abstract text available
Text: SK 85 MH 10 Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . Inverse diode
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85MH10
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Untitled
Abstract: No abstract text available
Text: SK 115 MD 10 Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2 .
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115MD10
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A 122 transistor
Abstract: No abstract text available
Text: SK 115 MD 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8
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115MD10
A 122 transistor
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Untitled
Abstract: No abstract text available
Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2
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Untitled
Abstract: No abstract text available
Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2
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85MH10
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Untitled
Abstract: No abstract text available
Text: SK 115 MD 10 Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2 .
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115MD10
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DIODE 5AA
Abstract: No abstract text available
Text: SK 85 MH 10 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- .
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85MH10
03eristic,
DIODE 5AA
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mosfet h bridge inverter
Abstract: No abstract text available
Text: SK 115 MD 10 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- .
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115MD10
mosfet h bridge inverter
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Untitled
Abstract: No abstract text available
Text: SK 100 WT '203 '223* ' 23 52306 $&$ 7 ' :&& $-&& ' 8&& $/&& 1 6 8. 9 0; $&& <1 &8 0; $&& <1 $/ $=&& $%&& 0; $&& <1 $% Characteristics Symbol Conditions SEMITOP 3 Thyristor Units 7 517'>5?7' 7 5230 5103>5?03 1!@ 6 /. $/. 9A $& $.&& $-.&
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351JK
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Abstract: No abstract text available
Text: SK 70 WT '203 '223* ' 23 52306 7/ 8 ' ;&& $-&& ' 9&& $/&& 1 6 9. : 0< 7& =1 &9 0< 7& =1 $/ $7&& $%&& 0< 7& =1 $% Characteristics Symbol Conditions SEMITOP 3 Thyristor Units 8 518'>5?8' 8 5230 5103>5?03 1!@ 6 /. $/. :A $& $&&& ;&& 8 5B
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TRANSISTOR MAA
Abstract: No abstract text available
Text: SK 115 MAA 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 : 6 + .6 ; Values Units 122 4 /2 7- 8- 9 9 ! <2 = > 1-2 . 7- 8- 9 9 ! <2 = > 1-2 . Inverse diode
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Abstract: No abstract text available
Text: SK 115 MAA 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 03## 5 5 + /- . + /- ,2 .6 1 : 6 + .6 ; Values Units 122 4 /2 7- 8- 9 9 ! <2 = > 1-2 . 7- 8- 9 9 ! <2 = > 1-2 . Inverse diode
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Untitled
Abstract: No abstract text available
Text: SK 30 DGDL 066 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper ,03 ! ! !< ,"03 1 .*2 / 1 .* 75 2/ 8 1 9*5 2 1 .* 75 2/ 8 1 97* 2 1 .* 2 / = 9 8 SEMITOP 3
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Abstract: No abstract text available
Text: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module SK 35 GB 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
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Abstract: No abstract text available
Text: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 44 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C
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Abstract: No abstract text available
Text: SK 35 GAR 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Chopper IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 43 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C
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Semikron sk 100 dal
Abstract: Semikron sk 50 dal
Text: S1E D Ô13bb71 □□0303ti 375 SEMIKRON INC s e Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V lc ICM > 1200 V SEMITRANS 3 NPN Power Darlington Modules 150 A, 1200 V 1200 V V SK 150 DB 120 D SK 150 DAL 120 D V A tp = 1 ms 300 A 150 A II
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13bb71
0303ti
Semikron sk 100 dal
Semikron sk 50 dal
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SK3GL06
Abstract: SK3GH08 SK3GF06 SK3GL08 SK3GH06 SK3GH01 SK3GL10 SK3GF04 SK3GH02 SK3GF02
Text: S 1E 013bti71 0 0 0 3 ^ 1 1 » =]flb « S E K G se MIKRO n SEMIKRON INC Fast Recovery Rectifier Diodes Ifrm s maximum values for continuous operation V rsm 10 A V rrm | 10 A | 10 A \ '03-15 Ifa v (sin. 180; Tref= 105 °C, L = 10 mm; f < 1 kHz) 3,8 A 3,4 A
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13bfci71
SK3GF01
SK3GH01
SK3GF02
SK3GH02
SK3GL02
SK3GF04
SK3GF06
SK3GH06
SK3GL06
SK3GL06
SK3GH08
SK3GL08
SK3GL10
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DIODE T25 4
Abstract: DIODE T25 DIODE T25 4 C sk 3003 s diode t25 4 1 lF-26A BRIDGE-RECTIFIER compact SEMITOP 4 weight SK70D V160
Text: SK70D Iq - 70 A full conduction SEMITOP0 2 V V (T .-8 0 - C ) &00 1200 800 1200 SK 70 D 03 SK 70 D 12 1600 1200 SK 70 D 16 S ym b o l C o n d itio n s «0 T#- 8 0 -C 'fâw T ^ -2 5 *C; 10 ms T ^ -1 5 0 *C; 10 ms T ^ -2 5 -C; 8.3.10 mj Pt T ^ -1 5 0 *C: 8.3.10 ms
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SK70D
lF-26A
DIODE T25 4
DIODE T25
DIODE T25 4 C
sk 3003 s
diode t25 4 1
BRIDGE-RECTIFIER compact
SEMITOP 4 weight
SK70D
V160
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hske 6000
Abstract: HSKE skv 1/2b 6000/5400 SKV1 HSK E 14000/6300 7500 3300 HSK-E 2500 B6000 HSK-E 5000 SKV1/HSK E 14000/6300
Text: S 1E D • fll3 bb?l □ D G 3 ciSci Ô53 « S E K G seMIKRDn SEMIKRON INC Section 10: High Voltage Rectifiers V rrm V BR VvHMS Types V V 6000 7500 8000 10000 12000 15000 " P 2_3> - 0 5 N Rthja Vf If a v If a v If n Tort Tamb |f — 1A Tamb =45°C =75°C =45°C
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f-40-
B10-4
hske 6000
HSKE
skv 1/2b 6000/5400
SKV1
HSK E 14000/6300
7500 3300
HSK-E 2500
B6000
HSK-E 5000
SKV1/HSK E 14000/6300
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