skm 195 gb 125 dn
Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
Text: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D
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400GAL125D
101GD066HDS
151GD066HDS
201GD066HDS
202GB066HDs
302GB066HDs
402GB066HDs
SEMIX171KH16S
SEMIX191KD16S
SEMIX241DH16S
skm 195 gb 125 dn
IGBT ultra fast
SKM200GB12E4
303GB12E4s
SKM300GB123D
igbt sixpack
skm 50 gb 100 d
151GB12E4s
skm200gb123d
bridge rectifier 107
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SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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semikron IGBT
Abstract: SEMISTACK SEMISTACK IGBT B6CI IGBT SEMISTACK SEMIKRON Tunnel diode tunnel diodes IGBT 1500 igbt semikron
Text: Power Electronics Systems – SEMISTACK SEMISTACK with IGBT: SEMITRANS and SEMITOP® 20 A - 1500 A up to 1 MW Mains voltage Topology VRMS 240 / 400 / 690 B6CI Nominal current Power rating A kW up to 1500 up to 1 MW SEMITOP® Stack for UPS systems SEMITRANS™ IGBT module stack in tunnel configuration up to 250 kW
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SKM200GB122D
Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D
Text: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich
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Wacker Silicones p12
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available
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din 7985
Abstract: SKM100GB063D SK 200 GAR 125 schaltung Mosfet wacker SKM181A3 if2t SKM151 SKM181
Text: 5. SEMITRANS M Leistungs-MOSFET Module Besondere Merkmale Typische Anwendungen Leistungs-MOSFET Module • N-Kanal-Anreicherungstyp • Schaltnetzteile • Kurze innere Verbindungen verhindern • Selbstgeführte Wechselrichter • Gleichstrom-Servo- und Roboter-Antriebe
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semikron SKm 123D
Abstract: capacitor 10 KVA 400v chopper power supply 201P16 SEMISTACK dc chopper circuit application 3300U SKM 200 APPLICATION
Text: SEMISTACK - IGBT SEMITRANS Stack1 Three phase bridge rectifier + 3x chopper Circuit Iout2) Vout2) / Vdcmax Types E1CIKF 200 100 / 750 110 KVA Traction Auxiliary Stack Symbol Conditions Iout Ptot fSW fSWmaxCsl per chopper Total output power Application switching frequency
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F/400V
110KVA
P16/200G
semikron SKm 123D
capacitor 10 KVA
400v chopper power supply
201P16
SEMISTACK
dc chopper circuit application
3300U
SKM 200 APPLICATION
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400V igbt dc to dc buck converter
Abstract: semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci
Text: SEMISTACK - IGBT Circuit Irms A Vac / Vdcmax Types B6CI 30 440 / 750 SEMITEACH - IGBT Symbol Conditions Irms SEMITRANS Stack1) Three-phase rectifier + inverter with brake chopper SEMITEACH - IGBT SKM 50 GB 123D SKD 51 P3/250F Features VCES VCE(SAT) VGES
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F/400V
P3/250F
400V igbt dc to dc buck converter
semikron SKm 123D
semikron SKm 50 GB 123D
SEMITEACH
single phase inverter IC IGBT
123D
Semitrans inverter rectifier
B6U 380
single phase inverter IGBT
b6u b6ci
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Untitled
Abstract: No abstract text available
Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM200GAL12E4
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Abstract: No abstract text available
Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A
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SKM600GA12E4
CA009
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Untitled
Abstract: No abstract text available
Text: SKM400GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440
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SKM400GAL12E4
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Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SKM150GB12T4G
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Abstract: No abstract text available
Text: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C
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SKM300GBD12T4
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Untitled
Abstract: No abstract text available
Text: SKM400GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440
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SKM400GAR12E4
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Untitled
Abstract: No abstract text available
Text: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C
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SKM600GA12T4
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SKM300GAL12E4
Abstract: diode 345 C353A IGBT for switched reluctance motor switched reluctance motor IGBT 600 011 DSA001767
Text: SKM300GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A
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SKM300GAL12E4
VCE009
SKM300GAL12E4
diode 345
C353A
IGBT for switched reluctance motor
switched reluctance motor IGBT
600 011
DSA001767
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SKM600GA12T4
Abstract: No abstract text available
Text: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SKM600GA12T4
SKM600GA12T4
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SKM300GB12T4
Abstract: No abstract text available
Text: SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353
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SKM300GB12T4
SKM300GB12T4
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SKM300GB12E4
Abstract: skm300gb12e skm300gb SKM300GB-12E4
Text: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A
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SKM300GB12E4
SKM300GB12E4
skm300gb12e
skm300gb
SKM300GB-12E4
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SKM100GB101D
Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
Text: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D
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15GD100D
25GD100D
22GD101D
22GD121D
40GD101D
40GD121D
40GB101D
40GB121D
50GB101D
50GB121D
SKM100GB101D
SKM200GB122D
SKM40GD121D
SKM200GB102D
SKM400GA122D
SKM400GA102D
SKM75GB121D
SKM40GD101D
SKM150GB122D
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semibox
Abstract: 32020200 M6x12 31949100 M6X20 32711300 122d 31947300 SEMIKRON book
Text: SEMITRANS IGBT Modules Packaging, ESO Protection and Mounting Hardware The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD . They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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diode KE
Abstract: semikron MD thyristor kl diode Diode KD 6 17 PONT DIODE thyristor code thyristor push pull SEMISTACK semikron power assemblies SEMIKRON book
Text: se m ik r o n SEMIKRON Power Semiconductors Contents Section 1 2 3 4 5 6 6 7 8 9 10 11 12 13 Product SEMIPACK Thyristor/Diode Modules Fast SEMIPACtC Diode Modules Thyristors Thyristor Pairs for Water Cooling SEMITRANS® M Power MOSFET Modules SEMITRANS® M IGBT Modules
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SKM 600 gb
Abstract: Semitrans skm 75 gb 100 SKM 300 CIRCUIT SKM 200 APPLICATION skm 100 gb 101 d SKM 195 Gb 123 IGBT 838102 SKM 75 GB 123 iran
Text: 5EMIKR0N innovation + service take your pick there is a p e rfe ct fit fo r your a pp lica tio n rugged easy paralleling short c ircu it p ro of lo w sw itch in g losses 1 2 6 series: SEMITRANS Trench IGBT 1 2 8 series: SEMITRANS SPT IGBT o chips ^ package
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SKM200GAR122D
Abstract: No abstract text available
Text: s e MIKRO n Cases D 27 / D 38 SEMITRANS 2 Cases D 34 / D 54 C = 3; E = 1 Section 6: SEMITRANS® IGBT Modules Type Vces • discontinued during 1995 VcEsat Pwi @ @ 2 5 °C lc Tease -2 5 "C IG B T -2 5 °C V W [ C /W r e p la c e d b y '. . . l 2 3 D " o r " . . . 1 6 3 D '\ s e e p a g e 8
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50GA121D
75GA161D
SKM100GA121D
SKM100GA161D
SKM200GA1020
SKM30CG
SKM200GB162D
22GD101D
40GD101D
SKHI21,
SKM200GAR122D
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