Untitled
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C
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SEMiX452GB176HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C
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SEMiX452GB176HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V
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SEMiX452GB176HDs
SEMiX452GB176HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 437 A Tc = 80°C 310 A 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 389 A Tc = 80°C 262 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules
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SEMiX452GB176HDs
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sinus
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V
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SEMiX452GB176HDs
SEMiX452GB176HDs
E63532
Typic11:
sinus
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Untitled
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C
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SEMiX452GB176HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots
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SK645FR
substit43/09
JESD46
1005/Rev
SEMIX353GB126V1
SEMIX703GB126V1
semix503gb126v1
SEMiX653GD176v1
SEMIX252GB126V1
SEMiX241MD008s
SEMIX302GB126V1
semix503gb126v
SEMIX353GB126HDS
SEMiX353GD176v1
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