SEMIX603GAL066HDS Search Results

SEMIX603GAL066HDS Price and Stock

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SEMIKRON SEMIX603GAL066HDS Igbt Module, Single, 600V, 720A; Continuous Collector Current:720A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes \|Semikron SEMIX603GAL066HDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX603GAL066HDS	Bulk			6	1 - 10 $147.93 100 $135.26 1000 $135.26 10000 $135.26	Buy Now
SEMIKRON SEMIX603GAL066HDS 27891130 Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX603GAL066HDS 27891130				1	1 $445.43 10 $351.98 100 $316.68 1000 $316.68 10000 $316.68	Get Quote

SEMIX603GAL066HDS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SEMiX603GAL066HDs		Semikron	Trench IGBT Modules		Original	PDF

SEMIX603GAL066HDS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX603GAL066HDs	PDF
C577A Abstract: No abstract text available Text: SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX603GAL066HDs C577A	PDF
semix igbt GAL Abstract: E63532 Text: SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 720 A Tc = 80°C 541 A 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 771 A Tc = 80°C 562 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX603GAL066HDs semix igbt GAL E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C	Original	SEMiX603GAL066HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V	Original	SEMiX603GAL066HDs SEMiX603GAL066HDs	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF