SF-104 EQUIVALENT TRANSISTOR Search Results

SF-104 EQUIVALENT TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

SF-104 EQUIVALENT TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
371 ph Abstract: motorola 2198 MRF949 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N Text: MOTOROLA Order this document by MRF949T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low	Original	MRF949T1/D MRF949T1 MRF949 371 ph motorola 2198 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N	PDF
1E14 Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET Text: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance	Original	FSGJ164R FSGJ164R 1E14 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET	PDF
diode vg 902 c2 Abstract: 1E14 2E12 FSPL134D1 FSPL134R3 Rad Hard in Fairchild for MOSFET Text: FSPL134R, FSPL134F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the	Original	FSPL134R, FSPL134F FSPL134F diode vg 902 c2 1E14 2E12 FSPL134D1 FSPL134R3 Rad Hard in Fairchild for MOSFET	PDF
1E14 Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET Text: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance	Original	FSGYC164R FSGYC164R 1E14 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET	PDF
1E14 Abstract: 2E12 FSPJ164D1 FSPJ164R3 Text: FSPJ164R, FSPJ164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ1 R, PJ1 bjec diat den GR ista Cha l wer SF ) tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance	Original	FSPJ164R, FSPJ164F 1E14 2E12 FSPJ164D1 FSPJ164R3	PDF
1E14 Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 Text: FSPYC264R, FSPYC264F Data Sheet June 2001 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PY 64R PY 64F bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard	Original	FSPYC264R, FSPYC264F FSPYC264F 1E14 2E12 FSPYC264D1 FSPYC264R FSPYC264R3	PDF
transistor motorola 351 Abstract: MRF949T1 MRF949 sc 2878 Text: Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	MRF949T1/D MRF949 25SEP01 90/SC 26MAR02 transistor motorola 351 MRF949T1 sc 2878	PDF
MRF949 Abstract: MRF949T1 Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	MRF949T1/D MRF949T1 MRF949 MRF949T1	PDF
Untitled Abstract: No abstract text available Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	MRF949T1/D MRF949T1 MRF949 MRF949T1/D	PDF
microlab fc 730 Abstract: ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949 MRF949T1 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well	Original	MRF949T1/D MRF949 25SEP01 90/SC 26MAR02 microlab fc 730 ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949T1	PDF
1E14 Abstract: 2E12 FSPS134D1 FSPS134R3 Rad Hard in Fairchild for MOSFET Text: FSPS134R, FSPS134F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the	Original	FSPS134R, FSPS134F FSPS134F 1E14 2E12 FSPS134D1 FSPS134R3 Rad Hard in Fairchild for MOSFET	PDF
Untitled Abstract: No abstract text available Text: TM September 2013 • What are Semiconductor Devices? • How Semiconductors are Made − Front-End Process − Back-End Process • Fabrication Facility and Equipment Issues • Business Aspects of Supplying Semiconductors TM 2 TM 4 A conductor carries electricity like a pipe	Original		PDF
1E14 Abstract: 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET Text: FSPJ264R, FSPJ264F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ2 R, PJ2 bje dia de , GR ista Cha l wer SF ) tho yw s dia de , GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance	Original	FSPJ264R, FSPJ264F 1E14 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET	PDF

MRF927 Abstract: MRF927T1 S212 HP11590B Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to	Original	MRF927T1/D MRF927T1 MRF927T1/D* MRF927 MRF927T1 S212 HP11590B	PDF
snl310 programming guide Abstract: SNL310 0x000005 P4M transistor Text: SNL310 PROGRAMMING GUIDE SNL310 Programming Guide General Release Specification SONIX reserves the right to make change without further notice to any products herein to improve reliability, function or design. SONIX does not assume any liability arising out of the application or use of any product or circuit described herein; neither does	Original	SNL310 snl310 programming guide SNL310 0x000005 P4M transistor	PDF
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509	PDF
MRF927T1 equivalent Abstract: Motorola 581 741 datasheet motorola MRF927 MRF927T1 MRF927T3 S212 3019 npn transistor Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to	Original	MRF927T1/D MRF927T1 MRF927T3 MRF927T1 MRF927T1 equivalent Motorola 581 741 datasheet motorola MRF927 MRF927T3 S212 3019 npn transistor	PDF
transistor fb 31n Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1 Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion	Original	MRF581/D MRF581 MRF5812R1, MRF5812 MRF581 transistor fb 31n MRF5815 case 317-01 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812R1	PDF
a1273 transistor DATA Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270 Text: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions	Original	80C186EB/80C188EB sa-16 a1273 transistor DATA a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270	PDF
Halbleiterbauelemente DDR Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170 Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs temperatur von 25 °C angegeben.	OCR Scan	DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170	PDF
RCA-40673 Abstract: 40673 MOSFET rca 40673 40673 TRANSISTOR 40673 dual gate mosfet FET 40673 40673 200 pF air variable capacitor RCA40673 mosfet 40673 Text: MOS F IE L D -E F F E C T D E V IC E S 40673 APPLICATIONS SILICON DUAL INSULATED GATE FIELD-EFFECT TRANSISTOR N Chamel Depletion Type With Integrated Sate-Protection Circuits For RF Amplifier Applications ip to 400 MHz • R F am plifier, m ixer, and I F am plifier	OCR Scan	RCA-40673 VAM-010; 02-in. 085-in. 095-in. 5/16-in. 200-MHz 40673 MOSFET rca 40673 40673 TRANSISTOR 40673 dual gate mosfet FET 40673 40673 200 pF air variable capacitor RCA40673 mosfet 40673	PDF
24 LC 0261 Abstract: MRF927 42497 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 M RF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors lc = 10mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to	OCR Scan	SC-70) MRF927T1 RF927T3 0E-15 0E-12 38E-9 MRF927 SC-70 24 LC 0261 42497 transistor	PDF
Untitled Abstract: No abstract text available Text: EIE D • t iE 4^025 0 0 1 b 3 3 0 =5 ■ MITSUBISHI LSIs M 5M 482128J - 8. - 10. -12 ^ M I T S U B I S H I ME MOR Y/ AS IC 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM T-46-23-17 DESCRIPTION The Mitsubishi M5M482128J is a high speed 1048576-bit Dual Port Dynamic Memory equipped with a 128K x 8	OCR Scan	482128J T-46-23-17 M5M482128J 1048576-bit M5M482128J-8 T-46-23-T	PDF

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SF-104 EQUIVALENT TRANSISTOR Search Results

SF-104 EQUIVALENT TRANSISTOR Result Highlights (5)

SF-104 EQUIVALENT TRANSISTOR Datasheets Context Search

FET K161

371 ph

1E14

diode vg 902 c2

1E14

1E14

1E14

transistor motorola 351

MRF949

Untitled

microlab fc 730

1E14

Untitled

1E14

MRF927

snl310 programming guide

2sc5088 horizontal transistors

MRF927T1 equivalent

transistor fb 31n

a1273 transistor DATA

Halbleiterbauelemente DDR

RCA-40673

24 LC 0261

Untitled