Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SG35N12DT Search Results

    SG35N12DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SG35N12DT Sirectifier Discrete IGBTs Original PDF

    SG35N12DT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Discrete IGBTS

    Abstract: SG35N12DT SG35N12T DSA0025285
    Text: SG35N12T, SG35N12DT Discrete IGBTs Dimensions TO-247AD E C G C TAB SG35N12T G=Gate, C=Collector, E=Emitter,TAB=Collector SG35N12DT Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient IC25 IC90 ICM


    Original
    SG35N12T, SG35N12DT O-247AD SG35N12T 150oC; 40A/us 100oC 00A/us; Discrete IGBTS SG35N12DT SG35N12T DSA0025285 PDF

    Discrete IGBTS

    Abstract: SG35N12DT SG35N12T Tvj-150
    Text: SG35N12T, SG35N12DT Discrete IGBTs Dimensions TO-247AD E C G C TAB SG35N12T G=Gate, C=Collector, E=Emitter,TAB=Collector SG35N12DT Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient TC=25oC TC=90oC


    Original
    SG35N12T, SG35N12DT O-247AD SG35N12T 150oC; 40A/us 100oC 00A/us; Discrete IGBTS SG35N12DT SG35N12T Tvj-150 PDF

    TO247AD

    Abstract: TO-247ad SOT-227 Package TO247-AD Discrete IGBTS SG12N06DT SG23N06DT SG23N06T, SG23N06DT SG12N06DP SG12N06P
    Text: Isolated Gate Bipolar Transistors IGBTs Discrete IGBTs Äèñêðåòíûå IGBT Òype VCES V IC25 Electrical Characteristics IC90 VCEsat @TC=25°C @TC=25°C @25°C typ. EOFF @125°C typ. RthJC Ñõåìà Package Style A A V 7 1.5 0.6 2.30 1 TO-220AB mJ


    Original
    O-220AB SG7N06P SG7N06DP SG12N06P SG12N06DP SG12N06T O-247AD TO247AD TO-247ad SOT-227 Package TO247-AD Discrete IGBTS SG12N06DT SG23N06DT SG23N06T, SG23N06DT SG12N06DP SG12N06P PDF