m27c2568
Abstract: m27c2568-25 1N914 M27C256B PDIP28 A13D BA431
Text: SGS-THOMSON M27C256B HDfgœaLKgTTSQROQ 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10O^A
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OCR Scan
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M27C256B
M27C256B
TSOP28
TSOP28
00bfl434
m27c2568
m27c2568-25
1N914
PDIP28
A13D
BA431
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PDF
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M27256A
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON M27256 •LI NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
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OCR Scan
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M27256
170ns
M27256
M27256A
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PDF
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M27C2001-15F1
Abstract: 27c2001 M27C2001
Text: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.
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OCR Scan
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M27C2001
2048K
M27C2001
FDIP32-W
FDIP32-W
32-PIN
M27C2001-15F1
27c2001
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PDF
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WM-52E
Abstract: No abstract text available
Text: S2E » • 712*1237 0037b34_470 ■S6TH S fi SGS-THOMSON T ~ if é - I 3 ~ 2 c\ S-THOMSON M27V201 LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ADVANCE DATA ■ LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (Ta = -40 to 85°C)
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OCR Scan
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0037b34
M27V201
250ns
LCCC32W,
PLCC32
24sec.
M27V201
M27C2001
TheM27V201
WM-52E
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PDF
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Untitled
Abstract: No abstract text available
Text: / T 7 SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi M87C257 ADDRESS LATCHED 256K (32K x 8) UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|aA
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OCR Scan
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M87C257
M87C257
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PDF
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Untitled
Abstract: No abstract text available
Text: rZT SGS-THOMSON M48T35 M48T35Y ^ 7 # . raDWHHHOTMDEi 256K 32K x8 TIMEKEEPER • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
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OCR Scan
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M48T35
M48T35Y
M48T35
M48T35Y
SOH28
M48T35,
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA
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OCR Scan
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M27C256B
10OjiA
M27C256B
TSOP28
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PDF
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON M27256 NMOS 256K 32K x 8 UV EPROM • FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMMING ALGORITHM ■ ELECTRONIC SIGNATURE
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OCR Scan
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M27256
170ns
M27256
IP28W
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PDF
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mgra
Abstract: PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1
Text: SGS-THOMSON ILiCTtFM O O S M 87C 257 LATCHED 256K 32Kx8 CMOS UV EPROM - OTP ROM • ■ ■ ■ ■ ■ ■ INTEGRATED ADDRESS LATCH. VERY FAST ACCESS TIME : 100 ns. COMPATIBLE TO HIGH SPEED MICROPRO CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION :
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OCR Scan
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32Kx8)
M87C257
28-pin
transparent7C257-15C6
DIP28
mgra
PLCC32-32-LEAD
M87C257-20F1
MGRA 21
M87C257-12F1
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PDF
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27C256B
Abstract: No abstract text available
Text: [ Z J SGS-THOMSON ^JÆ, KiilDtgMIlILKgìrMMtgi M27C256B CMOS 256K 32K x 8 UV EPROM and OTP ROM ABBREVIATED DATA • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICROPRO CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA
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OCR Scan
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M27C256B
M27C256B
VA00814
27C256B
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PDF
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SGS M27C2001
Abstract: 1N914 IA10 M27C2001 TSOP32 am27c2001
Text: SGS"THOMSON !lLi TIM Raû©i M27C2001 2 Megabit 256K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(xA
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OCR Scan
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M27C2001
24sec.
M27C2001
as262
TSOP32
TSOP32
7TST237
SGS M27C2001
1N914
IA10
am27c2001
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PDF
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Untitled
Abstract: No abstract text available
Text: £ y j SGS-THOMSON 0 g[^@[l[L[l(gTO(ô Kiia(gi M27C4002 4 Megabit (256K x 16) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns > COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz
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OCR Scan
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M27C4002
10OjxA
24sec.
PLCC44
JLCC44W
M27C4002
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PDF
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Untitled
Abstract: No abstract text available
Text: rrz SGS-THOMSON M28F256 * 7 # . IM g[s3 i[Li(gTnS©l i!IO(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns (PRESTO F PROGRAMMING)
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OCR Scan
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M28F256
120ns
100ns
M28F256
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PDF
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Untitled
Abstract: No abstract text available
Text: ¿ = 7 SGS-THOMSON M27256 NMOS 256K 32K x 8 UV EPROM • FAST ACC ESS TIM E: 170ns ■ EXTENDED TEM PERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40m A max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMM ING ALGORITHM
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OCR Scan
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M27256
170ns
FDIP28W
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PDF
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A12C
Abstract: M28F201 TSOP32 Scans-005192
Text: SGS-THOMSON M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10(xATyp. ■ 10,000 PROGRAM/ERASE CYCLES ■ 12V PROGRAMMING VOLTAGE ■ 5V ± 10% SUPPLY VOLTAGE
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OCR Scan
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M28F201
15mATyp.
M28F201
TSOP32
TSOP32
0D71D71
A12C
Scans-005192
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PDF
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON [ L ir a » « M27C2001 CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100nA
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OCR Scan
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M27C2001
100nA
24sec.
M27C2001
C2001
FDIP32W
PDIP32
LCCC32W
PLCC32
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PDF
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27C4002-12
Abstract: IP40-W
Text: SGS-THOMSON ilLdimrœKinei M 27C 4002 4096K 256K x 16 CMOS UV EPROM P R ELIM IN A R Y DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE TO HIGH SPEED MICROPRO CESSORS ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 70mA at 10 MHz
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OCR Scan
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100ns.
M27C4002
27C4002-10XF1
27C4002-12XF1
27C4002-15XF1
27C4002-20XF1
27C4002-25XF1
4002-12F1
4002-15F1
4002-20F1
27C4002-12
IP40-W
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M27V402 R f f lD ^ [ llL liO T IjîO ll i LOW VOLTAGE _ 4 Megabit 256K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POW ER ’’CMOS” CONSUMPTION:
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OCR Scan
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M27V402
120ns
24sec.
M27V402
M27C4002
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PDF
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON M27V201 ^ T # . OKODÊlSûilLIllOTOliSIDÊi LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -40 to 85°C)
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OCR Scan
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M27V201
250ns
LCCC32W,
PLCC32
TSOP32
24sec.
M27V201
M27C2001
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ^ 7 # M27C2001 [j* ^ Q i[L i(§ » M (g S CMOS 2 Megabit (256K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA
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OCR Scan
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M27C2001
24sec.
M27C2001
FDIP32W
PDIP32
PLCC32
LCCC32W
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PDF
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1N914
Abstract: M28F201 PDIP32 PLCC32 VA00644
Text: 5 7 , SGS-THOMSON M28F201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACC ESS TIM E: 100ns LOW POWER CONSUMPTION - Standby Current: 10O^A Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIME 10(is (PRESTO F ALGORITHM)
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OCR Scan
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M28F201
100ns
M28F201
PDIP32
PLCC32
PTS032
1N914
VA00644
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PDF
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Untitled
Abstract: No abstract text available
Text: w# SGS-THOMSON M27V201 V # « RitlD M li[Lli©inS lii!lD©i LOW VOLTAGE 2 Megabit 256K x 8) UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA
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OCR Scan
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M27V201
120ns
24sec.
M27V201
M27C2001
M27W201
PLCC32
TSOP32
FDIP32W
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PDF
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Untitled
Abstract: No abstract text available
Text: SEE » • TTSIEB? 0036432 723 ■SGTH 7 ^ ^ - Z 3 - /V SGS-THOMSON M46Z256 M46Z256Y iIUira RDDgi S G S-TH0HS0N CMOS 256K x 16 ZEROPOWER SRAM PRELIMINARY DATA ■ INTEGRATED LOW POWER SRAM, POWER FUL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIM
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OCR Scan
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M46Z256
M46Z256Y
256Kx
M46Z256
M46Z256Y
M46Z256,
0Q38M41
PMDIP40
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PDF
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c1237 ha
Abstract: mm27256
Text: rZ J SGS-THOMSON ^ 7m * HO lS s [ilLi(gî[àl(MD(gS M 27256 NMOS 256K (32K x 8) UV EPROM • FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE - LOW STANDBY CURRENT: 40mA max - TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM
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OCR Scan
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170ns
M27256
M27256
FDIP28W
FDIP28W
c1237 ha
mm27256
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PDF
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