1n4101-1
Abstract: 1N4627
Text: Xw SGS-THOMSON iHG 1N 4614->1 N 4627 1N 4 0 9 9 - 1N 4118 ZENER DIODES • VOLTAGE RANGE : 1,8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak age low noise. Zener impedance and Zener voltage specified for low level operation at lzt = 250uA.
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250mW
250uA.
1n4101-1
1N4627
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in5341B
Abstract: C 5388 IN5333B in5359b IN5340B in5359 IN5333 IN5341 in-5359-b 5377B
Text: SGS-THOMSON I0 8S I N 5333 B -> 1 N 5388 B ZENER DIODES • VOLTAGE RANGE : 3,3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ HIGH SURGE CAPABILITY {up to 180W @ 8.3ms DESCRIPTIO N 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter
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N5349B
Abstract: N5383 N536 5w zener n5352b N5342B 1n5388b
Text: T SGS-THOMSON ^7# 1N5335B / 1 N5388B 5W ZENER DIODES FEATURES • VOLTAGE RANGE : 3.9 V to 200 V ■ HERMETICALLY SEALED PLASTICCASE ■ HIGH SURGE CAPABILITY: 180 W 8.3 m s . DESCRIPTION 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Svmbol P T stg Tj
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1N5335B
N5388B
1N5388B
N5349B
N5383
N536
5w zener
n5352b
N5342B
1n5388b
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T-LVA62A
Abstract: diode zl 8.2 diode zl 82 diode zener ZL 1
Text: Æ 7 SGS-THOMSON ^ 7# noigKQiLiOTiiiiiiiiei GENERAL PURPOSE & INDUSTRIAL ZENER DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 mW / Tamb = 25°C Tj max = 175°C general purpose series Type rZT 1*ZT 'ZT V Z T 'IZ T Noise Density Vr 'R @ 250 nom Package max ÎÎ
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U 4614 B
Abstract: SI 4614 4614 B U 4614 p 4614 4614
Text: rZ 7 SGS-THOMSON ^ 7# [MtglRKsmiOlii *! TMM 4614 -» TMM 4627 ZENER DIODES • VOLTAGE RANGE : 1,8V TO 6.2V DESCRIPTION Low leakage, low Impedance, low noise Zener diodes ABSOLUTE RATINGS limiting values Sym bol P a ra m e te r P lo t P ow er Dissipation
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B2X55C
Abstract: BZX 55 C 5V 8 bzx 8v2 ZENER bzx 46 c 43 55C8V2 BZX 3,3 B2X55 ZX 25
Text: r z 7 SGS-THOMSON LlOTOiDOS BZX 55 C 0V8 -> 200 ^ 7# 5 ZENER DIODES • . ■ ■ LARGE VOLTAGE RANGE : 0.8V TO 200V DOUBLE SLUG TYPE CONSTRUCTION PRO ELECTRON REGISTRATION CECC FOR TYPES : 2.7V TO 62V level quality assessment : L DESCRIPTION 500mW hermetically sealed glass silicon Zener
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500mW
B2X55C
BZX 55 C 5V 8
bzx 8v2
ZENER bzx 46 c 43
55C8V2
BZX 3,3
B2X55
ZX 25
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5221B
Abstract: 5252 F 1107 5252 F minimelf marking B432-2
Text: SbE J> m 7 ^ 2 3 7 GG41blS T7 3 M S G T H S i SGS-THOMSON T-//-V/ I G J O T M W i TMM 5221B -> TMM 5271B S G S-THOMSON ZENER DIODES V O L T A G E R A N G E : 2 .4 V T O 100V DESCRIPTION 5 0 0 m W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values
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7TETE37
GG41blS
5221B
5271B
500mW
200mA)
7T2T237
5252 F 1107
5252 F
minimelf marking
B432-2
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in5349b
Abstract: IN5364B IN5350B IN5349 in5364 C 5388 1N5344 1n5333
Text: SGS-THOMSON ^ « iiL iO ’iMOigS 1N 5333 B ^ 1N 5388 B ZENER DIODES • VOLTAGE RANGE : 3.3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ HIGH SURGE CAPABILITY (u p to 1 8 0 W @ 8.3ms D E S C R IP T IO N 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values)
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IN5355
Abstract: IN5340 In 5352 IN5343 IN5359 IN5352 in5356 1n5377 1N5349 1N5346
Text: SGS-THOMSON I0 8S I N 5 3 3 3 B -> 1 N 5 3 8 8 B ZENER DIODES • VOLTAGE RANGE : 3,3V TO 200V ■ HERMETICALLY SEALED PLASTIC C A SE ■ HIGH S U R G E CAPABILITY {up to 180W @ 8.3ms DESCRIPTION 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values)
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W0458
Abstract: 935AB IN937 935A
Text: f Z 7 SGS-THOMSON ^7# 1N 935,A,B 1N939,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING DO 35 Glass ABSOLUTE RATINGS (limiting values) P aram e ter Symbol Ptot Power Dissipation* T stg
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1N939
W0458
935AB
IN937
935A
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L3240B1
Abstract: No abstract text available
Text: i^ 7 SGS-THOMSON *7Æ s ELETRONIC TWO-TONE RINGER LOW CURRENT CONSUMPTION, IN ORDER TO ALLOW THE PARALLEL OPERATION OF4 DEVICES INTEGRATED RECTIFIER BRIDGE WITH ZENER DIODES TO PROTECT AGAINST OVERVOLTAGES LITTLE EXTERNAL CIRCUITRY TONE AND SWITCHING FREQUENCIES AD
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L3240B1
L3240D1
L3240
GQS33
L3240
14kfi,
100nF
LS1240
L3240B1
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1240 ringer
Abstract: ls1 loud speaker LS1 buzzer T-943 LS1240
Text: r=7 SGS-THOMSON LS1240 LS1 2 4 0 A ELECTRONIC TWO - TONE RINGER • LOW CURRENT CONSUMPTION, IN ORDER TO ALLOW THE PAR ALLELOPER ATION OF 4 DEVICES . INTEGRATED RECTIFIER BRIDGE WITH ZENER DIODES TO PROTECT AGAINST OVERVOLTAGES ■ LITTLE EXTERNAL CIRCUITRY
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LS1240
LS1240and
LS1240A
LS1240.
LS1240
1240 ringer
ls1 loud speaker
LS1 buzzer
T-943
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bzx 550 4v7
Abstract: 8ZX55 bzx 550 7v5 BZX55C BZX 5V6 zener BZX 4v7 ZENER bzx 55 c BZX 6v8 bzx 79 6v2 BZX 9V1
Text: / = 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ZENER DIODES DRTTrnnm cnttR PRO-ELECTRON SERIES CECC APPROVAL STANDARD ZENER DIODES Type VZT 1 *ZT* min rZT > 'Z T ” m ax m ax Í2 (V) Tgmb BZX 5 5 C 0 V 8 (1) BZX 55 C 2V4 BZX 55 C 2V7 CECCL BZX 55 C 3V0 CECCL
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55C0V8
8ZX55
BZX55A:
bzx 550 4v7
bzx 550 7v5
BZX55C
BZX 5V6
zener BZX 4v7
ZENER bzx 55 c
BZX 6v8
bzx 79 6v2
BZX 9V1
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IN4109
Abstract: 2901N 4626 thomson 4122 1N4103 1N4106 1N4109 1N4120 1N4122 1N4127
Text: GENERAL PURPOSE & INDUSTRIAL Ä 7# SGS-THOMSON ZENER DIODES LOW LEAKAGE, LOW IMPEDANCE, LOW NOISE ZENER DIODES Type V z t / 'z t >ZT rZ T / 'Z T |R Vr Noise Density <ZM Package @ 250 ¡¡A nom V <M ) (Ö) <m A ) (V) max (jiV I V H i ) vF < 1 v(ramb = 25°c, iF = 0.2A)
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1N4618
1N4122
1N4127
1N4128
1N4132
1N4133
1N4135
IN4109
2901N
4626
thomson 4122
1N4103
1N4106
1N4109
1N4120
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minimelf marking
Abstract: p 4614 4626 1085P
Text: SbE D • 7^2^537 0041bl3 1TD «SfiTH r r z SGS-THOMSON ^ 7 # S T-H-Û7 M t œ n m g i r a œ s TMM 4614 -» TMM 4627 G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 1.8V TO 6.2V D E S C R IP T IO N Low leakage, low impedance, low noise Zener diodes A B S O L U T E R A T IN G S limiting values
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0041bl3
7T5TS37
200mA)
minimelf marking
p 4614
4626
1085P
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4749A
Abstract: 4735A 4728a 4733a 4732A TM 1812 4738A 4744a 4736a 4740a
Text: SbE J> m 7TST237 DD41bG5 G24 • S G T H / I T SGS-THOMSON ^ 7# M g [R i iL i(M (0« S T-/I-/J T M 4 7 2 8 A -> T M 4 7 6 4 A S 6 S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 3.3V TO 100V D E S C R IP T IO N 1W h e rm e tica lly sealed glass silicon Zener diodes.
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7T2T237
4764A_
200mA)
4749A
4735A
4728a
4733a
4732A
TM 1812
4738A
4744a
4736a
4740a
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bzx 79 6v2
Abstract: BZX 5V6 bzx 180 BZX 150 zener BZX 4v7 zener 5v6 zener BZX 79 4v7 zener BZX 5V1 zener BZX 180 BZX 9V1
Text: f Z J SGS-THOMSON * 7# GENERAL PURPOSE & INDUSTRIAL RIOOÈTOilUiCTBMIKeS ZENER DIODES STANDARD ZENER DIODES Type Vz t /' z t * mln rZT 1 'ZT max V * Pulse test o P BZX 79 C 2V7 CECCL BZX 79 C 3V0 CECCL P BZX 79 C 3V3 CECCL P BZX 79 C 3V6 CECCL . P BZX 79 C 3V9 CECCL
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pa 3029 b
Abstract: b3436 1N3019B 1N3027 1N3026B 1N3041
Text: s 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MDÊ^OIILiKginSQIfülOtgi ZENER DIODES STANDARD ZENER DIODES Type rZT'IZT* V Z T 'IZ T * rZK 1 >ZK 'ZT* “ VZ •r ' v R VR •ZM V (mA) P ackage Tam b 25° C min nom max (ß) (V) 1W / Tamb 1N 3016 B 1N 3017 B
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1N3019B
pa 3029 b
b3436
1N3027
1N3026B
1N3041
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Untitled
Abstract: No abstract text available
Text: rz 7 ^ 7# SGS-THOMSON ^ « IL K S T T O M S B Z M 8 5 C 2 V 7 -> 1 0 0 ZENER DIODES • VOLTAGE RANGE : 2.7V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values Symbol P aram eter V alu e Unit P lo t
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zener BZX 86
Abstract: C9V1P zener BZX 4v7 9C4V3 79c18 bzx 9v1 9c4v7 zener BZX 5V1 24v bzx 2v7 zener BZX 3V6
Text: SGS-THOMSON ^ 7# Raoe^oitEeî^iaiwiies BZX 79 C 2V4-»100 ZENER DIODES • VOLTAGE RANGE : 2.4V TO 100V ■ DOUBLE SLUG TYPE CONSTRUCTION . PRO ELECTRON REGISTRATION 2.4V TO 100V ■ CECC FOR TYPES : 2.7V TO 62V LEVEL QUALITY ASSESSMENT : L DO 35 (Glass)
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ZENER bzx 46 c 20
Abstract: ZENER bzx 55 c ZENER bzx 46 c ZENER bzx 46 c 43 BZX 5V6 BZX 150 83c zener BZX 9V1 zener BZX 3V6 B2X83C
Text: Æ T SGS-THOMSON * 7# GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type VZT / l2T * rZT 1 >ZT* >ZT* rZK 1 'ZK “ VZ >r > v r Vr <ZM V (mA) Package Tamb 25°C min max (V) 500 mW / Tam b = P B2X 83 C 2V4 P BZX 83 C 2V7 BZX 83 C 3V0 P BZX 83 C 3V3
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1N4739
Abstract: zener 4733 1N4189 4742A SGS-THOMSON ZENER DIODES
Text: n Z Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M Q » [i[L [E g ? [M « S ZENER DIODES STANDARD ZENER DIODES Type 1 W VZT ' 'ZT* rZ T 'IZ T * nom max (V) (0) 'ZT* rZK 1 'ZK max (mA) (O) typ (10«/°C) 1 Tamb = 50°C Tj max = 200°C P 1N 4728 A 1N 4729 A
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ZPY100
Abstract: ZPY*5v6 *zpy*6v2 ZPY-5V1 zpy8v2
Text: SGS-THOMSON ssueM iiueTraoes ZPY 3V9 ZPY 100 ZENER DIODES N E W S E R IE • VOLTAGE RANGE : 3.9V TO 100V D E S C R IP T IO N 1.3W hermetically sealed glass silicon Zener diodes. A B S O L U T E R A T IN G S limiting values P aram eter Symbol V alue Unit
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zener diode IN 825
Abstract: 1N4566 zener diode 1n 4565 4577 1N3157 1N821 1N823 1N825 1N827
Text: n=7 SGS-THOMSON ^7 # GENERAL PURPOSE & INDUSTRIAL MO K@ilLIi STO©R!lû(gi ZENER DIODES SYMMETRICAL ZENER DIODE Type Vz t ' I z t 'ZT rZT 1 <ZT V(CL @ Ipp Ct yp Ir ' V r V(CL) @ Ipp Package Vr = 0 BZV 37 max. 6.2 (Ö) (mA) 6.8 (V) 20 5 (V) (A) 15 F = 1 MHz
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1N821
1N823
1N825
1N827
1N829
1N4566
1N3157
zener diode IN 825
zener diode 1n
4565
4577
1N821
1N823
1N825
1N827
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