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    Text: SGTN15C120HW Insulated Gate Bipolar Transistor, IGBT 1200V, 15A High Speed Field Stop IGBT Features • Low gate charge  Field Sotp Technology  Low saturation voltage: VCE sat = 1.8V (@ IC = 15A, TC = 25C)  RoHS compliant product Applications


    Original     		SGTN15C120HW O-247 N15C120H 28-NOV-13 PDF