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    SHANGHAI SUNRISE ELECTRONICS Search Results

    SHANGHAI SUNRISE ELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SHANGHAI SUNRISE ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    202E

    Abstract: D15SB10 D15SB100
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. D15SB10 THRU D15SB100 TECHNICAL SPECIFICATION SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES D15SB • Glass passivated junction chip • Ideal for printed circuit board


    Original     		PDF D15SB10 D15SB100 D15SB 250oC/10sec/ UL-94 D15SB 202E D15SB100

    1N6267

    Abstract: 1N6267A 202E 5KE440A 5KE440CA DO-201AE 1.5K75A
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1.5KE6.8 THRU 1.5KE440CA TECHNICAL SPECIFICATION TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W FEATURES DO-201AE • 1500W peak pulse power capability • Excellent clamping capability


    Original     		PDF 5KE440CA DO-201AE 265oC/10S/9 UL-94 types10 5KE110A 5KE120 5KE120A 5KE130 5KE130A 1N6267 1N6267A 202E 5KE440A 5KE440CA DO-201AE 1.5K75A

    IN4148

    Abstract: switching diode in4148 diode IN4148 IN4148 DIODE 202E
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. IN4148 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage


    Original     		PDF IN4148 150mA 250oC/10S/9 100oC) IN4148 switching diode in4148 diode IN4148 IN4148 DIODE 202E

    TP01A

    Abstract: 202E MM4148 Shanghai Sunrise Electronics
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. MM4148 SURFACE MOUNT SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES • Ideal for surface mount pick and place application • Small glass structure ensures high reliability


    Original     		PDF MM4148 150mA C/10S/9 100oC) 100KHz 100MHz TP01A 202E MM4148 Shanghai Sunrise Electronics

    202E

    Abstract: 2CK120
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK120 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage


    Original     		PDF 2CK120 150mA 250oC/10S/9 202E 2CK120

    RC30S01G

    Abstract: RC30S10G
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01G THRU RC30S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids


    Original     		PDF RC30S01G RC30S10G RC30S RC30S RC30S10G

    RC15S01G

    Abstract: RC15S10G
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC15S01G THRU RC15S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids


    Original     		PDF RC15S01G RC15S10G RC15S RC15S RC15S10G

    202E

    Abstract: 2CK48 2CK48A 2CK48B
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK48, 2CK48A, 2CK48B SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching


    Original     		PDF 2CK48, 2CK48A, 2CK48B 5-60-90V 150mA 250oC/10S/9 2CK48 2CK48A 100oC) 202E 2CK48 2CK48B

    202E

    Abstract: D10SB10 D10SB100
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. D10SB10 THRU D10SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES D10SB • Glass passivated junction chip • Ideal for printed circuit board


    Original     		PDF D10SB10 D10SB100 D10SB 250oC/10sec/ UL-94 D10SB 202E D10SB100

    DIODE 1.0A 1000V

    Abstract: A 102G 101G 103G 105G 106G 202E FR101G FR107G
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. FR101G THRU FR107G GLASS PASSIVATED FAST RECOVERY RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DO - 41 • Molded case feature for auto insertion • Glass passivated chip • High current capability


    Original     		PDF FR101G FR107G 250oC/10sec/0 UL-94 DIODE 1.0A 1000V A 102G 101G 103G 105G 106G 202E FR107G

    2508 BRIDGE

    Abstract: GBPC25 GBPC25005 GBPC2510 GBPC
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. GBPC25005 THRU GBPC2510 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 25A FEATURES GBPC25 GBPC25W • Glass passivated junction chip • Surge overload rating: 300 A peak


    Original     		PDF GBPC25005 GBPC2510 GBPC25 GBPC25W 250oC/10sec/0 25aximum 2508 BRIDGE GBPC25 GBPC2510 GBPC

    R2M diode

    Abstract: Diode R2M std 202e 202E
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. R2M OVER VOLTAGE PROTACTION DIODE TECHNICAL SPECIFICATION BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A FEATURES DO - 15 • Excellent clamping capability • Low incremental surge resistance • High temperature soldering guaranteed:


    Original     		PDF 35-150V 250oC/10S/9 UL-94 100oC 15typ R2M diode Diode R2M std 202e 202E

    202E

    Abstract: D8SB10 D8SB100
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. D8SB10 THRU D8SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 8.0A FEATURES D8-SB • Glass passivated junction chip • Ideal for printed circuit board


    Original     		PDF D8SB10 D8SB100 250oC/10sec/ UL-94 202E D8SB100

    diode bridge 3506

    Abstract: 35a bridge GBPC35 GBPC35005 GBPC3510 GBPC35005 Thru GBPC3510
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. GBPC35005 THRU GBPC3510 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 35A GBPC35 FEATURES GBPC35W • Glass passivated junction chip • Surge overload rating: 400 A peak


    Original     		PDF GBPC35005 GBPC3510 GBPC35 GBPC35W 250oC/10sec/0 diode bridge 3506 35a bridge GBPC35 GBPC3510 GBPC35005 Thru GBPC3510

    RC10S01G

    Abstract: RC10S10G
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC10S01G THRU RC10S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces Ideal for hybrids


    Original     		PDF RC10S01G RC10S10G 150oC RC10S RC10S RC10S10G

    diode m7

    Abstract: M6 transistor surface mount M7 DO-214AC DSMA rectifier M7 m1 rectifier m7 diode M7 RECTIFIER surface mounted m6 transistor 202E
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. M1 THRU M7 SURFACE MOUNT RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DSMA/DO-214AC • Ideal for surface mount pick and place application • Low profile package • Built-in strain relief


    Original     		PDF DSMA/DO-214AC 260oC/10sec/at UL-94 100oC) diode m7 M6 transistor surface mount M7 DO-214AC DSMA rectifier M7 m1 rectifier m7 diode M7 RECTIFIER surface mounted m6 transistor 202E

    202E

    Abstract: No abstract text available
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. US2A THRU US2M SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 2.0A FEATURES SMB/DO-214AA B • Ideal for surface mount pick and place application • Low profile package


    Original     		PDF SMB/DO-214AA 260oC/10sec/at UL-94 202E

    p6ke68a

    Abstract: P6KE200(C)A equivalent 202E P6KE10 P6KE10A P6KE440A P6KE440CA P6KE160 P6KE200 602
    Text: SHANGHAI SUNRISE ELECTRONICS CO P6KE6.8 THRU P6KE440CA TECHNICAL SPECIFICATION TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W FEATURES DO-15 • 600W peak pulse power capability • Excellent clamping capability • Low incremental surge resistance


    Original     		PDF P6KE440CA DO-15 265oC/10S/9 UL-94 p6ke68a P6KE200(C)A equivalent 202E P6KE10 P6KE10A P6KE440A P6KE440CA P6KE160 P6KE200 602

    RC10S01

    Abstract: RC10S10
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC10S01 THRU RC10S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA


    Original     		PDF RC10S01 RC10S10 150oC RC10S RC10S RC10S10

    DIODE 1.0A 1000V

    Abstract: 202E DF10S
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. DF005S THRU DF10S SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DF-S • For surface mount application • Reliable low cost construction utilizing


    Original     		PDF DF005S DF10S 250oC/10sec/ UL-94 DIODE 1.0A 1000V 202E DF10S

    Diode 1N40

    Abstract: 1N40 diode 1N40 datasheet CHARACTERISTICS DIODE 1N4007 1N4001G 1N4007G 202E Shanghai Sunrise Electronics
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N4001G THRU 1N4007G GLASS PASSIVATED JUNCTION RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DO - 41 • Molded case feature for auto insertion • Glass passivated chip • High current capability


    Original     		PDF 1N4001G 1N4007G 250oC/10sec/0 UL-94 Diode 1N40 1N40 diode 1N40 datasheet CHARACTERISTICS DIODE 1N4007 1N4007G 202E Shanghai Sunrise Electronics

    RC30S01

    Abstract: RC30S10
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01 THRU RC30S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA


    Original     		PDF RC30S01 RC30S10 RC30S RC30S RC30S10

    152G

    Abstract: 155G 202E RL151G RL157G
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RL151G THRU RL157G GLASS PASSIVATED JUNCTION RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.5A DO - 15 FEATURES • Molded case feature for auto insertion • Glass passivated chip • High current capability


    Original     		PDF RL151G RL157G 250oC/10sec/0 UL-94 152G 155G 202E RL157G

    max3236

    Abstract: diode db3 51 DIA DB3 202E
    Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. DB3 BIDIRECTIONAL TRIGGER DIODE TECHNICAL SPECIFICATION BREAKOVER VOLTAGE: 32V POWER: 150mW FEATURES DO - 35 • VBO: 26 ~ 36V version • Low breakover current • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length


    Original     		PDF 150mW 250oC/10S/9 100Hz max3236 diode db3 51 DIA DB3 202E