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    Micro Commercial Components SI0205-TP

    N-CHANNEL MOSFET,SOT-523
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI0205-TP Cut Tape 2,375 1
    • 1 $0.27
    • 10 $0.165
    • 100 $0.27
    • 1000 $0.06688
    • 10000 $0.06688
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    SI0205-TP Digi-Reel 2,375 1
    • 1 $0.27
    • 10 $0.165
    • 100 $0.27
    • 1000 $0.06688
    • 10000 $0.06688
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    SI0205-TP Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05564
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    Mouser Electronics SI0205-TP
    • 1 $0.27
    • 10 $0.165
    • 100 $0.076
    • 1000 $0.066
    • 10000 $0.041
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    Red Lion Controls RPGBSI02

    0.75 INCH BORE SLEEVE
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    DigiKey RPGBSI02 Box 1
    • 1 $54.34
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    Newark RPGBSI02 Bulk 1
    • 1 $47.24
    • 10 $47.24
    • 100 $47.24
    • 1000 $47.24
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    Belden Inc FISI024P0

    CBL FIBER OPTIC 125UM SINGLEMODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FISI024P0 Bulk 1
    • 1 $1.9
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    • 100 $1.9
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    igus Inc JSI-0204-04

    1/8"ID 1/4"LG iglide J Bushing
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JSI-0204-04 Bulk 1
    • 1 $1.92
    • 10 $1.67
    • 100 $1.67
    • 1000 $1.67
    • 10000 $1.67
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    igus Inc JSI-0203-03

    1/8"ID 3/16"LG iglide J Bushing
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JSI-0203-03 Bulk 1
    • 1 $2.7
    • 10 $2.03
    • 100 $2.03
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    Find more SI02 price and stock on Findchips.com

    SI02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LS900-SI-02-AXX

    Abstract: avrisp WinAVR bpsk modulation AT86RF212 PCB ATXMEGA256A3
    Text: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate


    Original     		PDF SiFLEX02 LS900-SI-02-AXX LSDEV-SI02-A30 250mW ATXMEGA256A3 900MHz AT86RF212 ATXMEGA25 330-0009-R2 avrisp WinAVR bpsk modulation AT86RF212 PCB

    xmega 128

    Abstract: AVRISP mkII AT86RF212 LS900-SI-02-A50 LSDEV-SI02-A30 XMEGA Application Notes AT86RF212 PCB ATXMEGA256A3 W3112A AVR soldering temperature
    Text: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power • Long range: 2 miles • Up to 1Mbps RF data rate


    Original     		PDF SiFLEX02 LS900-SI-02-AXX LSDEV-SI02-A30 250mW ATXMEGA256A3 SFLX-DATA-0001-01 xmega 128 AVRISP mkII AT86RF212 LS900-SI-02-A50 LSDEV-SI02-A30 XMEGA Application Notes AT86RF212 PCB W3112A AVR soldering temperature

    HX6408

    Abstract: No abstract text available
    Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)


    OCR Scan     		PDF HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


    OCR Scan     		PDF 1x10u 1x109 1x101 1x108

    Untitled

    Abstract: No abstract text available
    Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly


    OCR Scan     		PDF HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


    OCR Scan     		PDF HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x101 1x109 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


    OCR Scan     		PDF HX84050 1x106 1x10s 200-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    Untitled

    Abstract: No abstract text available
    Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10e 1x101 36-Lead 28-Lead HC6856 1E-10

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC at.E D • S5b5TQS O O O U O b 2 ■ T -9 é ~ 2 3 -a sr 64K x 1 Radiation-Hard Static RAM FEATURES □ 64K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Access Time: £ 5 0 n sat8 0 °C □ Total Dose: £10* Rads Si02


    OCR Scan     		PDF L7CX187 L7CX187 X187-A t-46-23-05 24-pln L7CX187HC50 L7CX187HM50 L7CX187HME50 L7CX187HMB50

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6256 1x106rad 1x1014cm 1x109 1x101 28-Lead 4551A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02


    OCR Scan     		PDF HC6116--TTL 1x10u 1x109 1x101 86A-6/88

    A479SS

    Abstract: A476 A480S Al203 A473 Z201N 0 280 130 023 A459 A479 F1120
    Text: KyD C ERa T h e N e w V a l u e F r o n t ie r C h a r a c t e r is t ic s o f M a te ria l A445 W Â ÎB -§ - M ateriaIC ode 7tJl'XT 7 # F0RSTERITE 2Mg0-Si02 A L U M IN A (Al20 3) U n it M a te ria l I A459 I A473 I A476 I A479 I A479S^ I A480S I F1120


    OCR Scan     		PDF 2Mg0-Si02) Mg0-Si02) -2Si02) A479SS A480S F1023 F1120 Z201N ML652 Al203 A476 A480S A473 0 280 130 023 A459 A479 F1120

    Untitled

    Abstract: No abstract text available
    Text: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    OCR Scan     		PDF HR2000 1x109rad 1x101 1x101/cm2 HR2000

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)


    OCR Scan     		PDF HX9100 1x101 1x1012rad 1x101/cm2 HX9100 4SS1A72

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA UNDER DEVELOPMENT TMP90CM38 4.11 Serial Channel SI02 Timing Chart EXTERNAL CLK - tSCL ' - tsCH SCLK2 I X TXD2 OUTPUT DATA •tSR D ■ ■tH SR • RXD2 (INPUT DATA)" VALID :C INTERNAL tSCY tSCL SCLK2 . tsC H . J .t tSKD O TXD2 (OUTPUT DATA) tSRD


    OCR Scan     		PDF TMP90CM38 MCU90-489 MCU90-490 TMP90PM38 TMP90PM38F TMP90PM38T TMP90PM38 TMP90CM38. MCU90-507

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE d • sstsiQS a o a n m _ 256K x 1 Radiation-Hard Static RAM FEATURES □ 256K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Acces9 Time: S SO ns at 80°C □ Total Dose: £106 Rads Si02


    OCR Scan     		PDF 24-pin L7CX197 L7CX197HC50 L7CX197HM50 L7CX197HME50 L7CX197HMB50 X197-A

    S2L00

    Abstract: No abstract text available
    Text: 256K x 4 molale V id e o R A M M V M 4 2 5 9 -1 0 /1 2 Issue 2.0 : February 1992 P R E L IM IN A R Y S e m ic o n d u c to r Inc. Pin Definition 262,144 X 4 CMOS Fully Featured Video RAM SC SI01 SI02 DT/OE W1/I01 W 2/I02 WB/WE NC RAS A8 A6 A5 A4 Vcc Features


    OCR Scan     		PDF MIL-STD883D S2L00

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6656 1x106rad 1x109 1x101 1x10U 28-Lead MIL-STD-18

    HX6356

    Abstract: smd transistor AL2
    Text: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x1014crrv2 1x101 HX6356 36-Lead 1253C, HX6356 smd transistor AL2

    honeywell memory sram

    Abstract: 419B3E
    Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec


    OCR Scan     		PDF HR2210 1x106 1x1012rad 1x101 honeywell memory sram 419B3E

    1A15

    Abstract: honeywell hr 20 HLX6408
    Text: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)


    OCR Scan     		PDF 5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408