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    SI2301BDS SPICE DEVICE MODEL Search Results

    SI2301BDS SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SI2301BDS SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2301BDS SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF

    SI2301BDS SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2301BDS

    Abstract: Si2301BDS SPICE Device Model
    Text: SPICE Device Model Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2301BDS 08-Nov-02 Si2301BDS SPICE Device Model

    70314

    Abstract: Si2301BDS
    Text: SPICE Device Model Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2301BDS 18-Jul-08 70314

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 08-Apr-05 Si2301BDS SPICE Device Model

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3 SI2301 application
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 18-Jul-08 SI2301 application

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    LTC1763

    Abstract: 74HCD4 74HCD 74HCD4052 LTC3020 LTC1761 LT1995 TAIYO* cable 6 core LTC4260 schematic diagram 48v dc motor speed controller
    Text: LINEAR TECHNOLOGY NOVEMBER 2004 IN THIS ISSUE… COVER ARTICLE Versatile Op Amps Need No Resistors .1 VOLUME XIV NUMBER 4 Versatile Op Amps Need No Resistors by Glen Brisebois and Jon Munson Glen Brisebois and Jon Munson Issue Highlights . 2


    Original     		PDF Line055 I-20156 LTC1763 74HCD4 74HCD 74HCD4052 LTC3020 LTC1761 LT1995 TAIYO* cable 6 core LTC4260 schematic diagram 48v dc motor speed controller

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8