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    SI232 Price and Stock

    Micro Commercial Components SI2324A-TP

    MOSFET N-CH 100V 2A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2324A-TP Reel 144,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.09156
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    Mouser Electronics SI2324A-TP 25,692
    • 1 $0.41
    • 10 $0.259
    • 100 $0.123
    • 1000 $0.097
    • 10000 $0.07
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    Quest Components SI2324A-TP 89
    • 1 $0.18
    • 10 $0.18
    • 100 $0.1125
    • 1000 $0.1125
    • 10000 $0.1125
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    Vishay Siliconix SI2324DS-T1-GE3

    MOSFET N-CH 100V 2.3A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2324DS-T1-GE3 Digi-Reel 43,023 1
    • 1 $0.91
    • 10 $0.565
    • 100 $0.91
    • 1000 $0.25409
    • 10000 $0.25409
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    SI2324DS-T1-GE3 Cut Tape 43,023 1
    • 1 $0.91
    • 10 $0.565
    • 100 $0.91
    • 1000 $0.25409
    • 10000 $0.25409
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    SI2324DS-T1-GE3 Reel 42,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.175
    		Buy Now

    Vishay Siliconix SI2323DDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2323DDS-T1-BE3 Cut Tape 9,490 1
    • 1 $0.85
    • 10 $0.528
    • 100 $0.85
    • 1000 $0.23578
    • 10000 $0.23578
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    SI2323DDS-T1-BE3 Digi-Reel 9,490 1
    • 1 $0.85
    • 10 $0.528
    • 100 $0.85
    • 1000 $0.23578
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    SI2323DDS-T1-BE3 Reel 9,000 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.20295
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    Vishay Siliconix SI2324DS-T1-BE3

    MOSFET N-CH 100V 2.3A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2324DS-T1-BE3 Digi-Reel 8,390 1
    • 1 $0.91
    • 10 $0.565
    • 100 $0.91
    • 1000 $0.25409
    • 10000 $0.25409
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    SI2324DS-T1-BE3 Reel 6,000 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.21916
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    UMW SI2328A

    SOT-23 N-CHANNEL POWER MOSFETS R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2328A Digi-Reel 2,788 1
    • 1 $0.46
    • 10 $0.282
    • 100 $0.1784
    • 1000 $0.12
    • 10000 $0.12
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    SI2328A Cut Tape 2,788 1
    • 1 $0.46
    • 10 $0.282
    • 100 $0.1784
    • 1000 $0.12
    • 10000 $0.12
    		Buy Now
    Find more SI232 price and stock on Findchips.com

    SI232 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2320DS Vishay Intertechnology N-Channel 200-V (D-S) MOSFET Original PDF
    SI2320DS Vishay Siliconix N-Channel 200-V (D-S) MOSFET Original PDF
    SI2321DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    Si2321DS SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI2321DS-T1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI2321DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.9A SOT-23 Original PDF
    SI2321DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.9A SOT-23 Original PDF
    SI2321-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF
    SI2323CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A SOT-23 Original PDF
    SI2323DDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.3A SOT-23 Original PDF
    SI2323DS Vishay SI2323DS, 20V, -4.7A, 0.75W, SOT23 Original PDF
    SI2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI2323DS-RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    Si2323DS SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI2323DS-T1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.7A SOT23 Original PDF
    SI2323DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.7A SOT23-3 Original PDF
    SI2323DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.7A SOT23-3 Original PDF
    SI2324A-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    SI2324DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 2.3A SOT-23 Original PDF
    Si2325DS Vishay P-Channel Power MOSFET Original PDF

    SI232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2329DS

    Abstract: si2329 si23
    Text: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2329DS 11-Mar-11 si2329 si23

    si2329

    Abstract: SI2329DS
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329

    A96V

    Abstract: SI2328DS-T1-E3 Si2328DS
    Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)


    Original     		PDF Si2328DS O-236 OT-23) Si2328DS-T1 Si2328DS-T1--E3 08-Apr-05 A96V SI2328DS-T1-E3

    MARKING 33A DIODE SOT23

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2321 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.9A, RDS ON =57mΩ@VGS=-4.5V


    Original     		PDF SI2321 OT-23 MARKING 33A DIODE SOT23

    Untitled

    Abstract: No abstract text available
    Text: Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A) 2.35 at VGS = - 10 V - 0.49 2.45 at VGS = - 6.0 V - 0.48 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original     		PDF Si2327DS O-236 OT-23) 11-Mar-11

    SI2328DS-T1-GE3

    Abstract: No abstract text available
    Text: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si2328DS 2002/95/EC O-236 OT-23) Si2328DS-T1-E3 Si2328DS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original     		PDF Si2325DS O-236 OT-23) 11-Mar-11

    Si2321DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2321DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2321DS 18-Jul-08

    Si2327

    Abstract: Si2327DS 50256r
    Text: SPICE Device Model Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2327DS 18-Jul-08 Si2327 50256r

    Si2328DS

    Abstract: Si2328DS-T1-E3 A96V
    Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Available • 100 % Rg Tested • TrenchFET Power MOSFET TO-236 (SOT-23)


    Original     		PDF Si2328DS O-236 OT-23) Si2328DS-T1-E3 Si2328DS-T1-GE3 18-Jul-08 A96V

    74652

    Abstract: AN609 Si2321DS
    Text: Si2321DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2321DS AN609 04-May-07 74652

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2324DS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2324DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch


    Original     		PDF Si2323CDS O-236 OT-23) Si2323CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs


    Original     		PDF Si2324DS O-236 OT-23) Si2324DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G


    Original     		PDF Si2323DDS O-236 OT-23) Si2323DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov

    A96V

    Abstract: Si2326DS
    Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2326DS O-236 OT-23) S-2381--Rev. 23-Oct-00 A96V

    SI2324DS

    Abstract: Si2324DS-T1-GE3 si2324
    Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs


    Original     		PDF Si2324DS O-236 OT-23) Si2324DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2324

    Untitled

    Abstract: No abstract text available
    Text: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si2328DS 2002/95/EC O-236 OT-23) Si2328DS-T1-E3 Si2328DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2323CDS

    Abstract: 0749
    Text: SPICE Device Model Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2323CDS 18-Jul-08 0749

    Si2323CDS

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2323CDS 2002/95/EC O-236 OT-23) Si2323CDS-T1-GE3 18-Jul-08

    SI2323DS-T1-E3

    Abstract: Si2323CDS Si2323DS si2323cdst1ge3 Si2323DS-T1-GE3 Si2323DS-T1
    Text: Specification Comparison Vishay Siliconix Si2323CDS vs. Si2323DS Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2323CDS-T1-GE3 replaces Si2323DS-T1-GE3 Si2323CDS-T1-GE3 replaces Si2323DS-T1-E3 Si2323CDS-T1-GE3 replaces Si2323DS-T1


    Original     		PDF Si2323CDS Si2323DS OT-23 Si2323CDS-T1-GE3 Si2323DS-T1-GE3 Si2323DS-T1-E3 Si2323DS-T1 si2323cdst1ge3

    Si2323CDS

    Abstract: 5218 AN609
    Text: Si2323CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2323CDS AN609, 15-Jan-10 5218 AN609

    si2321

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2321 Features • • • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF SI2321 OT-23 -55and si2321