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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2337DS www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF Si2337DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74139

    Abstract: 74139 datasheet data sheet 74139 Si2337DS
    Text: SPICE Device Model Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si2337DS 18-Jul-08 74139 74139 datasheet data sheet 74139

    Si2337DS

    Abstract: Si2337DS-T1-E3
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 18-Jul-08

    SI2337DS

    Abstract: SI2337DS-T1-E3 Si2337DS rev ic MARKING QG 100-ETA Si2337DS Rev. A
    Text: Si2337DS New Product Vishay Siliconix P-Channel 80-V D-S MOSFET ‘ FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET ID rDS(on) (W) –80 (A)a 0.270 @ VGS = –10 V –2.2 0.303 @ VGS = –6 V –2.1 APPLICATIONS Qg (Typ) RoHS D Automotive such as


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    PDF Si2337DS O-236 OT-23) Si2337DS-T1 52230--Rev. 24-Oct-05 SI2337DS-T1-E3 Si2337DS rev ic MARKING QG 100-ETA Si2337DS Rev. A

    74139

    Abstract: data sheet 74139 74139 datasheet Si2337DS S5229 v636 si2337
    Text: SPICE Device Model Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si2337DS S-52290Rev. 31-Oct-05 74139 data sheet 74139 74139 datasheet S5229 v636 si2337

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 11-Mar-11

    Si2337DS-T1-E3

    Abstract: Si2337DS Si2337DS Rev. A
    Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1


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    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 08-Apr-05 Si2337DS Rev. A

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS www.vishay.com Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.270 at VGS = -10 V -2.2 0.303 at VGS = -6 V -2.1 VDS (V) -80 Qg (TYP.) 7 • TrenchFET power MOSFET • Material categorization: for definitions of compliance please see


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    PDF Si2337DS OT-23 O-236) Si2337DS-T1-E3 Si2337DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 VDS (V) - 80 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2337DS

    Abstract: Si2337DS-T1-E3 si2337
    Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 18-Jul-08 si2337

    Si2337DS

    Abstract: Si2337DS-T1-E3 Si2337DS Rev. A
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 11-Mar-11 Si2337DS Rev. A

    si2337

    Abstract: SI2337DS-T1-E3
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2337

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    C3216X7R1H105K

    Abstract: DR74-680-R GRM32ER71H475KA88 Si2328DS 3519f pwm circuits using 555 555 for dc dc boost converter 246 six pin switch si2337ds C3216X7R1E475K
    Text: LT3519 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Floating LED Current Sense from 0V to 45V


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    PDF LT3519 750mA 400kHz LT3519) 16-Lead LT3591 3519f C3216X7R1H105K DR74-680-R GRM32ER71H475KA88 Si2328DS 3519f pwm circuits using 555 555 for dc dc boost converter 246 six pin switch si2337ds C3216X7R1E475K

    LT3519-1

    Abstract: pwm generator
    Text: LT3519/LT3519-1/LT3519-2 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Rail-to-Rail LED Current Sense from 0V to 45V


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    PDF LT3519/LT3519-1/LT3519-2 750mA 400kHz LT3519) LT3519-1) LT3519-2) 16-Lead LT3591 3519fa LT3519-1 pwm generator

    Untitled

    Abstract: No abstract text available
    Text: LT3519/LT3519-1/LT3519-2 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Rail-to-Rail LED Current Sense from 0V to 45V


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    PDF LT3519/LT3519-1/LT3519-2 750mA 400kHz LT3519) LT3519-1) LT3519-2) 16-Lead LT3591 3519fa

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477