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    SI3446DV Price and Stock

    Vishay Intertechnologies SI3446DV

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    Bristol Electronics SI3446DV 2,036
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    Vishay Intertechnologies SI3446DV-T1

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    Bristol Electronics SI3446DV-T1 2,036
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    Vishay BLH SI3446DV-T1-E3

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    Bristol Electronics SI3446DV-T1-E3 370 6
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    Vishay Siliconix SI3446DV-T1

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    Quest Components SI3446DV-T1 1,293
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    Vishay Siliconix SI3446DV

    5.3 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
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    Quest Components SI3446DV 1,079
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    SI3446DV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3446DV Fairchild Semiconductor Single N-Channel, 2.5V Specified PowerTrench MOSFET Original PDF
    SI3446DV Fairchild Semiconductor Single N-Channel, 2.5V Specified PowerTrench MOSFE Original PDF
    SI3446DV Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI3446DV_NL Fairchild Semiconductor Single N-Channel, 2.5V Specified Power Trench Mosfet Original PDF
    SI3446DV-T1 Vishay Intertechnology N-Channel 2.5-V (G-S) MOSFET Original PDF

    SI3446DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDC637AN

    Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF FDC637AN SI3446DV FDC637AN marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV

    Si3446DV

    Abstract: No abstract text available
    Text: Si3446DV N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si3446DV S-54952--Rev. 06-Oct-97

    Si3446DV

    Abstract: No abstract text available
    Text: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3446DV S-54952--Rev. 06-Oct-97

    Untitled

    Abstract: No abstract text available
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF SI3446DV

    Si3446DV

    Abstract: Si3446DV-T1 SI3446DV-T1-E3
    Text: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6


    Original     		PDF Si3446DV Si3446DV-T1 18-Jul-08 SI3446DV-T1-E3

    70424

    Abstract: MOSFET 1052 AN609 Si3446DV
    Text: Si3446DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3446DV AN609 28-Mar-07 70424 MOSFET 1052

    74288

    Abstract: SI3446DV-T1-E3 Si3446DV Si3446DV-T1 Si3446ADV
    Text: Specification Comparison Vishay Siliconix Si3446ADV vs. Si3446DV Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3446ADV-T1-E3 Replaces Si3446DV-T1-E3 Si3446ADV-T1-E3 Replaces Si3446DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si3446ADV Si3446DV Si3446ADV-T1-E3 Si3446DV-T1-E3 Si3446DV-T1 31-Oct-06 74288

    Untitled

    Abstract: No abstract text available
    Text: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 2.85 mm (3) G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3446DV S-54952--Rev. 06-Oct-97

    FDC637AN

    Abstract: SI3446DV
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF FDC637AN SI3446DV FDC637AN SI3446DV

    Si3446DV-T1

    Abstract: Si3446DV
    Text: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6


    Original     		PDF Si3446DV Si3446DV-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G


    Original     		PDF Si3446DV Si3446DV-T1 S-31725--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6


    Original     		PDF Si3446DV Si3446DV-T1 S-51451--Rev. 01-Aug-05

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    mark 2L SOT236

    Abstract: SOT23-6 QG MOS MAX1523EUT-T 10TPA33M MAX1522 MAX1522EUT-T MAX1523 MAX1524 MAX1524EUT-T flyback operate in both ccm and dcm
    Text: 19-1926; Rev 0; 2/01 KIT ATION EVALU E L B A AVAIL Simple SOT23 Boost Controllers The MAX1522/MAX1523/MAX1524 are simple, compact boost controllers designed for a wide range of DC-DC conversion topologies, including step-up, SEPIC, and flyback applications. They are for applications where


    Original     		PDF MAX1522/MAX1523/MAX1524 MAX1522/MAX1523/MAX1524 mark 2L SOT236 SOT23-6 QG MOS MAX1523EUT-T 10TPA33M MAX1522 MAX1522EUT-T MAX1523 MAX1524 MAX1524EUT-T flyback operate in both ccm and dcm

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 r9824 R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523

    Q8031

    Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED


    Original     		PDF ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original     		PDF TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi

    L7803

    Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
    Text: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER


    Original     		PDF 514S0128 J9710 L7803 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2

    sil1162

    Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
    Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM


    Original     		PDF MPC7450 200PIN RPAK10P2C 1000BT SN74AUC1G04 sil1162 Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic

    ISL9504

    Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS


    Original     		PDF

    SOT23-5 AE31

    Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS


    Original     		PDF

    PP3V42G3H

    Abstract: temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700
    Text: 8 6 7 REV .csa Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF ITP700FLEX PP3V42G3H temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si3446DV Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary r DS(on) (£2) I d (A ) 0 .0 4 5 @ V Gs = 4 .5 V ± 5 .3 0 .0 6 5 @ V Gs = 2.5 ± 4 .4 V D S (V ) 20 V (1, 2, 5, 6) D O TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3 )G O 6 (4 )S •2.85 m m ■


    OCR Scan     		PDF Si3446DV S-54952â 06-Oct-97