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    SI3459 Price and Stock

    Vishay Siliconix SI3459BDV-T1-GE3

    MOSFET P-CH 60V 2.9A 6TSOP
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    DigiKey SI3459BDV-T1-GE3 Cut Tape 23,187 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
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    SI3459BDV-T1-GE3 Digi-Reel 23,187 1
    • 1 $1.21
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    • 1000 $0.35332
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    SI3459BDV-T1-GE3 Reel 21,000 3,000
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    RS SI3459BDV-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI3459BDV-T1-GE3 6,000 1
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    Vishay Siliconix SI3459BDV-T1-E3

    MOSFET P-CH 60V 2.9A 6TSOP
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    DigiKey SI3459BDV-T1-E3 Digi-Reel 4,982 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
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    SI3459BDV-T1-E3 Cut Tape 4,982 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
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    SI3459BDV-T1-E3 Reel 3,000 3,000
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    New Advantage Corporation SI3459BDV-T1-E3 42,000 1
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    Vishay Siliconix SI3459BDV-T1-BE3

    P-CHANNEL 60-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3459BDV-T1-BE3 Cut Tape 1,880 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
    • 10000 $0.35332
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    SI3459BDV-T1-BE3 Digi-Reel 1,880 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
    • 10000 $0.35332
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    Skyworks Solutions Inc SI3459-B02-IM

    IC POE CNTRL 8 CHANNEL 56QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3459-B02-IM Tray 33 1
    • 1 $9.46
    • 10 $6.55
    • 100 $5.0755
    • 1000 $4.1154
    • 10000 $4
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    Mouser Electronics SI3459-B02-IM
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    Richardson RFPD SI3459-B02-IM 1
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    Win Source Electronics SI3459-B02-IM 8,000
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    • 10 $6.9483
    • 100 $4.6322
    • 1000 $4.6322
    • 10000 $4.6322
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    Skyworks Solutions Inc SI3459-KIT

    EVAL BOARD FOR SI3459
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    DigiKey SI3459-KIT Box 2 1
    • 1 $430.8
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    Richardson RFPD SI3459-KIT 1
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    Find more SI3459 price and stock on Findchips.com

    SI3459 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3459-B02-IM Silicon Labs Integrated Circuits (ICs) - PMIC - Power Over Ethernet (PoE) Controllers - IC POE PSE 8 PORT 802.3AT 56QFN Original PDF
    SI3459-B02-IMR Silicon Labs Integrated Circuits (ICs) - PMIC - Power Over Ethernet (PoE) Controllers - IC POE PSE 8 PORT 802.3AT 56QFN Original PDF
    SI3459BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 2.9A 6-TSOP Original PDF
    SI3459BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 2.9A 6-TSOP Original PDF
    Si3459DV Vishay Intertechnology P-Channel 60-V (D-S) MOSFET Original PDF
    SI3459DV Vishay Siliconix MOSFETs Original PDF
    Si3459DV SPICE Device Model Vishay P-Channel 60-V (D-S) MOSFET Original PDF
    SI3459DV-T1 Vishay Intertechnology P-Channel 60-V (D-S) MOSFET Original PDF
    SI3459DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 2.2A 6-TSOP Original PDF
    SI3459-KIT Silicon Labs Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - EVAL KIT FOR SI3459 POE CTLR Original PDF
    SI3459SMART24-KIT Silicon Labs Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - EVAL KIT SI3459/3483 POE CTLR Original PDF

    SI3459 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3459BDV

    Abstract: Si3459BDV-T1-E3 804-30 mosfet 23 Tsop-6
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 VDS (V) - 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 4.4 nC APPLICATIONS


    Original     		PDF Si3459BDV Si3459BDV-T1-E3 15lectual 18-Jul-08 804-30 mosfet 23 Tsop-6

    Si3459BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3459BDV 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459DV 2002/95/EC Si3459DV-T1-E3 Si3459DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSOP-6

    Abstract: SI3459DV
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1-E3 18-Jul-08 TSOP-6

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/95/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 11-Mar-11

    SI3459DV

    Abstract: No abstract text available
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1--E3 08-Apr-05

    Si3459BDV

    Abstract: Si3459BDV-T1-E3
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 VDS (V) - 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 4.4 nC APPLICATIONS


    Original     		PDF Si3459BDV Si3459BDV-T1-E3 08-Apr-05

    SI3459DV-T1-GE3

    Abstract: SI3459DV-T1-E3
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459DV 2002/95/EC Si3459DV-T1-E3 Si3459DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI3459DV

    Abstract: No abstract text available
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G


    Original     		PDF Si3459DV Si3459DV-T1 S-51166â 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/96/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/95/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/95/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3459DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3459DV 18-Jul-08

    SI3459BDV

    Abstract: SI3459BDV-T1-GE3 Si3459BDV-T1-E3
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/95/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 18-Jul-08

    dm 0765

    Abstract: Si3459DV Si3459DV-T1-E3
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459DV 2002/95/EC Si3459DV-T1-E3 Si3459DV-T1-GE3 18-Jul-08 dm 0765

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3459BDV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3459BDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3459DV

    Abstract: No abstract text available
    Text: Si3459DV New Product Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.220 @ VGS = –10 V "2.2 0.310 @ VGS = –4.5 V "1.9 –60 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3459DV S-49635--Rev. 29-Nov-99

    a 6151

    Abstract: AN609 Si3459BDV 68616
    Text: Si3459BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3459BDV AN609 25-Mar-08 a 6151 68616

    7113

    Abstract: AN609 Si3459DV
    Text: Si3459DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3459DV AN609 16-Jan-06 7113

    Si3459BDV

    Abstract: Si3459BDV-T1-E3 Si3459BDV-T1-GE3
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/95/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 11-Mar-11

    Si3459DV

    Abstract: Si3459DV-T1-E3 Si3459DV-T1 51166 70877
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1-E3 08-Apr-05 51166 70877

    si3459bdv

    Abstract: TSOP 66 thermal resistance TSOP 66 Package thermal resistance 308I S0907
    Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3459BDV 2002/95/EC Si3459BDV-T1-E3 Si3459BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 66 thermal resistance TSOP 66 Package thermal resistance 308I S0907

    Si3459DV

    Abstract: 71527
    Text: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3459DV 07-May-01 71527

    Untitled

    Abstract: No abstract text available
    Text: _ Si3459DV VISHAY Vishay Siliconix New Product ▼ P-Channel 60-V D-S MOSFET *2 PRODUCT SUMMARY r DS(on) ( ) I d (A ) 0.220 @ VGS = -1 0 V ±2 .2 0.310 @ VGS = —4.5 V ±1 .9 V d s (V) ie< -6 0 (1 ,2 ,5 , 6) D Q TSOP-6


    OCR Scan     		PDF Si3459DV S-61516â 26-Apr-99