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Rochester Electronics LLC SI4463DY P-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4463DY	Bulk			392	1 - 10 - 100 - 1000 $0.77 10000 $0.77	Buy Now
Vishay Intertechnologies SI4463DY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4463DY		7,681			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4463DY		950			1 $2.4655 10 $2.4655 100 $0.7397 1000 $0.641 10000 $0.641	Buy Now
Vishay Intertechnologies SI4463DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4463DY-T1		6,814			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4463DY-T1		3,667			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4463DY-T1		2,933			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.75	Buy Now
	SI4463DY-T1		1,467			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.875	Buy Now
	SI4463DY-T1		256			1 $2.5 10 $2.5 100 $1.25 1000 $1 10000 $1	Buy Now
Vishay Siliconix SI4463DY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4463DY		5,644			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4463DY		10			1 $1.4793 10 $1.2328 100 $1.2328 1000 $1.2328 10000 $1.2328	Buy Now
ComSIT USA	SI4463DY		853			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4463DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4463DY-T1		5,644			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4463DY-T1		52			1 $2.189 10 $1.7512 100 $1.0945 1000 $1.0945 10000 $1.0945	Buy Now
ComSIT USA	SI4463DY-T1		19,114			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4463DY Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4463DY	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si4463DY	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si4463DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI4463DY	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI4463DY	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO-8	Scan	PDF
SI4463DY_NL	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si4463DY SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI4463DY-T1	Vishay Intertechnology	P-Channel 2.5-V (G-S) Rated MOSFET	Original	PDF

SI4463DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NS4160 Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .	Original	PDF	Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET
4463 SO8 MOSFET Abstract: 4463 B Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .	Original	PDF	Si4463DY 4463 SO8 MOSFET 4463 B
Untitled Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4463DY S-51654--Rev. 21-Apr-97
Si4463DY Abstract: 70707 Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4463DY 18-Jul-08 70707
Untitled Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G	Original	PDF	Si4463DY Si4463DY-T1 Si4463DY-T1--E3 S-50694--Rev. 18-Apr-05
PF7000 Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4463DY 08-Apr-05 PF7000
Si4463DY Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4463DY S-51654--Rev. 21-Apr-97
Si4463DY Abstract: No abstract text available Text: Si4463DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 - 20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4463DY S-20117--Rev. 11-Mar-02
Si4463DY Abstract: 52525rev Si4463DY SPICE Device Model Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4463DY S-52525Rev. 12-Dec-05 52525rev Si4463DY SPICE Device Model
Si4463DY Abstract: Si4463DY-T1 SI4463DY-T1-E3 Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G	Original	PDF	Si4463DY Si4463DY-T1 Si4463DY-T1--E3 18-Jul-08 SI4463DY-T1-E3
Si4463DY Abstract: No abstract text available Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4463DY 18-Jul-08
SI4463DY-T1 Abstract: No abstract text available Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4463DY Si4463DY-T1 (with Tape and Reel)	Original	PDF	Si4463DY Si4463DY-T1 S-31990--Rev. 13-Oct-03
mosfet p-channel 10A Abstract: Si4463DY Text: SPICE Device Model Si4463DY P-Channel 2.5-V G-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si4463DY mosfet p-channel 10A
AN609 Abstract: Si4463DY Text: Si4463DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4463DY AN609 31-Aug-05

Si4463DY Abstract: Si4463DY-T1 Si4463DY-T1-E3 Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G	Original	PDF	Si4463DY Si4463DY-T1 Si4463DY-T1--E3 08-Apr-05 Si4463DY-T1-E3
Si4463DY Abstract: No abstract text available Text: Si4463DY P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4463DY S-51654--Rev. 21-Apr-97
Si4463DY Abstract: No abstract text available Text: Si4463DY P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4463DY S-51654--Rev. 21-Apr-97
Si4463DY Abstract: No abstract text available Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4463DY 17-Apr-01
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	PDF	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
zeta converter its applications Abstract: 6TPB150M sanyo bh510 converter zeta 6TPB150M SANYO POSCAP 1N4148 EEFUE0G181R LTC1622 MBRD835L Text: advertisement Low Dropout 550kHz DC/DC Controller Operates from Inputs as Low as 2V – Design Note 208 San Hwa Chee The LTC 1622 is a versatile high efficiency step-down controller that easily meets the size requirements of handheld portable applications with its small MSOP package. High frequency of operation 550kHz allows the use	Original	PDF	550kHz 550kHz) LTC1622 750kHz. DN208 700mA 50mV/DIV 700mA) zeta converter its applications 6TPB150M sanyo bh510 converter zeta 6TPB150M SANYO POSCAP 1N4148 EEFUE0G181R MBRD835L
J122 Abstract: j3305 J122 transistor transistor j122 J380 motorola g24 motorola J122 R747 diode s m r707 C143 T transistor Text: Technical Information M OTOROLA G24 D EVELOPER ’S G UIDE D EVELOPER ’ S K IT ENGLISH JANUARY 31, 2007 6889192V26-E MRC Components OHG, Ob. Domberggasse 7, D-85354 Freising Tel. +49-8161-9848-0, Fax +49-8161-9848-20 E-mail: [email protected] Web: www.mrccomponents.de	Original	PDF	6889192V26-E D-85354 6889192V26@ 6889192V26 J122 j3305 J122 transistor transistor j122 J380 motorola g24 motorola J122 R747 diode s m r707 C143 T transistor
motorola g24 Abstract: 2SSA-3.0-S-05 g24 motorola module motorola D102 user guide D SUB connector ITT Cannon C143 E S S transistor gsm booster circuit gsm signal Booster 85 SMA-50-0-144 MAC8 Series 2SSA-3.0-S-05 Text: Technical Information M OTOROLA G24 D EVELOPER ’ S G UIDE D EVELOPER ’S K IT ENGLISH JANUARY 1, 2006 6889192V26-A MRC Components OHG, Ob. Domberggasse 7, D-85354 Freising Tel. +49-8161-9848-0, Fax +49-8161-9848-20 E-mail: [email protected] Web: www.mrccomponents.de	Original	PDF	6889192V26-A D-85354 6889192V26@ 6889192V26 motorola g24 2SSA-3.0-S-05 g24 motorola module motorola D102 user guide D SUB connector ITT Cannon C143 E S S transistor gsm booster circuit gsm signal Booster 85 SMA-50-0-144 MAC8 Series 2SSA-3.0-S-05
tp181 Abstract: toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic Text: 4-148 KBC3_SUSPWR 1% R11 10K 1% R18 6.65K P1.5V_AUX VDC C20 10nF TP192 TP193 R7 TP? 2.5V AL C6 330uF 7 6 5 TP194 Q57 SI4816DY IHLP-2525CZ-01 L1 4.7uH 25V C14 4700nF 3 8 2 D1 4 G2 1 G1 TP217 TP216 R1 1K TP196 25V C15 220nF TP191 5% TP190 R17 6.8K 1% R15 330K	Original	PDF	4700nF TP197 TP208 TP198 220nF ISL6225CA-T TP199 tp181 toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic
DO3316P-152 Abstract: DO3316P-222 DO3316P-332 SP6122 SP6122ACU STPS2L25U 4300ppm PDS6375 Text: SP6122 Low Voltage, Micro 8, PFET, Buck Controller Ideal for 1A to 5A, Small Footprint, DC-DC Power Converters • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Optimized for Single Supply, 3V - 7V Applications High Efficiency, Greater than 90% Possible	Original	PDF	SP6122 20ns/1nF SP6122 DO3316P-152 DO3316P-222 DO3316P-332 SP6122ACU STPS2L25U 4300ppm PDS6375

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SI4463DY Price and Stock

Rochester Electronics LLC SI4463DY

Vishay Intertechnologies SI4463DY

Vishay Intertechnologies SI4463DY-T1

Vishay Siliconix SI4463DY

Vishay Siliconix SI4463DY-T1

SI4463DY Datasheets (8)

SI4463DY Datasheets Context Search

NS4160

4463 SO8 MOSFET

Untitled

Si4463DY

Untitled

PF7000

Si4463DY

Si4463DY

Si4463DY

Si4463DY

Si4463DY

SI4463DY-T1

mosfet p-channel 10A

AN609

Si4463DY

Si4463DY

Si4463DY

Si4463DY

9n90c

zeta converter its applications

J122

motorola g24

tp181

DO3316P-152