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    SI5419D Price and Stock

    Vishay Siliconix SI5419DU-T1-GE3

    MOSFET P-CH 30V 12A PPAK CHIPFET
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    DigiKey SI5419DU-T1-GE3 Cut Tape 4,344 1
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    SI5419DU-T1-GE3 Digi-Reel 4,344 1
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    SI5419DU-T1-GE3 Reel 3,000
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    RS SI5419DU-T1-GE3 Bulk 20
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    Bristol Electronics SI5419DU-T1-GE3 223
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    Quest Components SI5419DU-T1-GE3 292
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    Vishay Intertechnologies SI5419DU-T1-GE3

    Trans MOSFET P-CH 30V 9.9A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5419DU-T1-GE3)
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    Avnet Americas SI5419DU-T1-GE3 Reel 8 Weeks 3,000
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    Mouser Electronics SI5419DU-T1-GE3 29,026
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    Verical SI5419DU-T1-GE3 2,739 34
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    SI5419DU-T1-GE3 955 134
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    Arrow Electronics SI5419DU-T1-GE3 Cut Strips 2,739 8 Weeks 1
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    Newark SI5419DU-T1-GE3 Cut Tape 5,840 1
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    SI5419DU-T1-GE3 Reel 3,000
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    Bristol Electronics SI5419DU-T1-GE3 12,857
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    Quest Components SI5419DU-T1-GE3 10,285
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    SI5419DU-T1-GE3 588
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    SI5419DU-T1-GE3 38
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    TTI SI5419DU-T1-GE3 Reel 6,000 3,000
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    TME SI5419DU-T1-GE3 1
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    Chip 1 Exchange SI5419DU-T1-GE3 15,485
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    Chip1Stop SI5419DU-T1-GE3 Cut Tape 975
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    EBV Elektronik SI5419DU-T1-GE3 18 Weeks 3,000
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    New Advantage Corporation SI5419DU-T1-GE3 8,843 1
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    Vishay BLH SI5419DU-T1-GE3

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    Bristol Electronics SI5419DU-T1-GE3 48 6
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    Others SI5419DU

    AVAILABLE EU
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    ComSIT USA SI5419DU 3,000
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    Vishay Intertechnologies SI5419DUT1GE3

    P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI5419DUT1GE3 3,000
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    SI5419D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5419DU-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 12A PPAK CHIPFET Original PDF

    SI5419D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI5419D

    Abstract: PowerPAK ChipFET Single
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI5419D PowerPAK ChipFET Single

    5458

    Abstract: 8023 mosfet transistor M 839 AN609
    Text: Si5419DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5419DU AN609, 27-Oct-08 5458 8023 mosfet transistor M 839 AN609

    Si5419DU

    Abstract: 82608 S-82608
    Text: SPICE Device Model Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5419DU 18-Jul-08 82608 S-82608

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si5419

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 18-Jul-08 si5419

    MARKING BF

    Abstract: SI5419DU PowerPAK ChipFET Single
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING BF PowerPAK ChipFET Single

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5419DU www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si5419DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si5419du

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 11-Mar-11

    Si5419DU

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5419DU Si5419DU-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints


    Original     		PDF VMN-PT0102-1007

    SI5517

    Abstract: si5459
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline AND TEC I INNOVAT O L OGY PowerPAK ChipFET® N HN POWER MOSFETs O 19 62-2012 Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints


    Original     		PDF Si5517DU VMN-PT0102-1209 SI5517 si5459

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477