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    SI6876BEDQ Datasheets (1)

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    SI6876BEDQ Vishay Siliconix MOSFETs Original PDF

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    Si6876BEDQ

    Abstract: Si6876EDQ SI6876EDQT1E3
    Text: Specification Comparison Vishay Siliconix Si6876BEDQ vs. Si6876EDQ Description: Bi-Directional N-Channel, 30 V D-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6876BEDQ-T1 Replaces Si6876EDQ-T1 Si6876BEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6876EDQ-T1-E3 (Lead (Pb)-free version)


    Original
    PDF Si6876BEDQ Si6876EDQ Si6876BEDQ-T1 Si6876EDQ-T1 Si6876BEDQ-T1-E3 Si6876EDQ-T1-E3 09-Nov-06 SI6876EDQT1E3

    Si6876BEDQ

    Abstract: No abstract text available
    Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS


    Original
    PDF Si6876BEDQ Si6876BEDQ-T1--E3 S-40581--Rev. 29-Mar-04

    Si6876BEDQ

    Abstract: No abstract text available
    Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS


    Original
    PDF Si6876BEDQ Si6876BEDQ-T1--E3 18-Jul-08

    A1818

    Abstract: No abstract text available
    Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS


    Original
    PDF Si6876BEDQ Si6876BEDQ-T1--E3 08-Apr-05 A1818

    SI6876BEDQ

    Abstract: No abstract text available
    Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS


    Original
    PDF Si6876BEDQ Si6876BEDQ-T1--E3 08-Apr-05